A ceramic composite for light conversion comprising a solidified body in which crystalline phases of oxides are three-dimensionally entangled and a method for manufacture thereof. A manufacture method of a ceramic composite for light conversion is characterized in that a polishing step is provided in a chemical mechanical polishing (CMP) process applied to the surface of a solidified body with a structure in which an Al.sub.2O.sub.3 phase and other phases are three-dimensionally entangled.

Methods and systems for thinning a device wafer to tens of micron, micron, or sub-micron thicknesses are disclosed. Device wafers are thinned by using a two-step grinding process and a chemical mechanical polish (CMP) process. One or more first grinding parameters associated with the first grinding process are determined, received, and/or adjusted before and/or during the performance of the first grinding process. One or more second grinding parameters associated with the second grinding process are determined, received and/or adjusted before and/or during the performance of the second grinding process. One or more polishing parameters associated with the CMP process are determined and/or adjusted before and/or during the performance of the CMP process.

Methods and systems for thinning a device wafer to tens of micron, micron, or sub-micron thicknesses are disclosed. Device wafers are thinned by using a two-step grinding process and a chemical mechanical polish (CMP) process. One or more first grinding parameters associated with the first grinding process are determined, received, and/or adjusted before and/or during the performance of the first grinding process. One or more second grinding parameters associated with the second grinding process are determined, received and/or adjusted before and/or during the performance of the second grinding process. One or more polishing parameters associated with the CMP process are determined and/or adjusted before and/or during the performance of the CMP process.

Methods and systems for thinning a device wafer to tens of micron, micron, or sub-micron thicknesses are disclosed. Device wafers are thinned by using a two-step grinding process and a chemical mechanical polish (CMP) process. One or more first grinding parameters associated with the first grinding process are determined, received, and/or adjusted before and/or during the performance of the first grinding process. One or more second grinding parameters associated with the second grinding process are determined, received and/or adjusted before and/or during the performance of the second grinding process. One or more polishing parameters associated with the CMP process are determined and/or adjusted before and/or during the performance of the CMP process.

Methods and systems for thinning a device wafer to tens of micron, micron, or sub-micron thicknesses are disclosed. Device wafers are thinned by using a two-step grinding process and a chemical mechanical polish (CMP) process. One or more first grinding parameters associated with the first grinding process are determined, received, and/or adjusted before and/or during the performance of the first grinding process. One or more second grinding parameters associated with the second grinding process are determined, received and/or adjusted before and/or during the performance of the second grinding process. One or more polishing parameters associated with the CMP process are determined and/or adjusted before and/or during the performance of the CMP process.

There is provided a colloidal silica with reduced fine particles and a production method therefor. In the colloidal silica, the number distribution ratio of fine particles having a particle diameter of 50% or less of the particle diameter median value based on the equivalent circle diameter (Heywood diameter) by image analysis using an electron microscope is 1% or less. Also, the method for producing such a colloidal silica is a method in which an easily hydrolyzable organosilicate is fed to and allowed to react with a reaction solution containing a hydrolysis catalyst composed of one or a mixture of two or more selected from organic amines, wherein the feeding is performed with the feeding port of the easily hydrolyzable organosilicate immersed under the surface of the reaction solution.

A silicon polishing method and a silicon polishing composition that is to be used for the silicon polishing method. The silicon polishing method is for polishing a silicon wafer by using an abrasive-grain polishing pad that contains polishing abrasive grains while supplying the silicon polishing composition that does not contain the polishing abrasive grains. The silicon polishing composition contains an organic amine and a water. The silicon polishing composition has a pH of 10.6 to 12.8.

A method for conditioning a polishing pad of a polishing system is provided. The method comprises performing an in-situ pad conditioning process and an ex-situ pad conditioning process outside of a polishing operation. The in-situ pad conditioning process comprises causing a pad conditioner to contact the polishing pad during the polishing operation. The ex-situ pad conditioning process comprises causing the pad conditioner to contact the polishing pad while a cleaning agent is applied to the polishing pad.

A polishing liquid which reduces the occurrence of erosion and scratches on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished is provided. In addition, a chemical mechanical polishing method using the above-mentioned polishing liquid is provided. The polishing liquid is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film. The polishing liquid includes colloidal silica, an organic acid, a specific nitrogen-containing aromatic heterocyclic compound and hydrogen peroxide, and has a pH of 8.5 to 12.

A wax coating apparatus for wafer mounting of the embodiment includes: a vacuum chuck in which a vacuum flow path providing vacuum pressure is embedded; a heating plate mounted on an upper side of the vacuum chuck and having holes and grooves connected to the vacuum flow path of the vacuum chuck in order to suck a block to which a wafer is adhered; a rotating shaft connected to a lower side of the vacuum chuck; a driving motor for rotating the rotating shaft; and a wax nozzle provided to be spaced apart from the upper side of the vacuum chuck, wherein the heating plate may be operated so as to heat the block while the wax nozzle sprays wax on the block.