Methods, apparatus, and systems for fabricating and using a semiconductor device comprising a first conductive element; a second conductive element; and an e-fuse comprising a first region comprising a conductive oxide of a first metal; and a second region comprising a second metal, wherein an oxide of the second metal is resistive; wherein the e-fuse is electrically connected to both the first conductive element and the second conductive element.

An integrated circuit memory comprises an intermediate layer disposed between a plurality of bit lines in a bit line conductor layer and a plurality of word lines in a word line conductor layer. The intermediate layer includes a plurality of memory posts through an interlayer insulating structure. Each memory post has a memory element and an access element. The interlayer insulating structure includes higher thermal resistance at the level of the memory element than at the level of the access element.

Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to one or more barrier layers having various characteristics formed under and/or over and/or around correlated electron material.

A phase change memory (PCM) cell with a heating element electrically isolated from laterally surrounding regions of the PCM cell by a cavity is provided. A dielectric region is arranged between first and second conductors. A heating plug is arranged within a hole extending through the dielectric region to the first conductor. The heating plug includes a heating element running along sidewalls of the hole, and includes a sidewall structure including a cavity arranged between the heating element and the sidewalls. A phase change element is in thermal communication with the heating plug and arranged between the heating plug and the second conductor. Also provide is a method for manufacturing the PCM cell.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

The present invention is directed to a memory device including a first layer of memory cells with each cell of the first layer of memory cells including a two-terminal selection element coupled to a memory element in series; a plurality of first local wiring lines connected to one ends of the first layer of memory cells along a first direction with each of the first local wiring lines being electrically connected to two first line selection transistors at two ends thereof; and a plurality of second local wiring lines connected to other ends of the first layer of memory cells along a second direction substantially orthogonal to the first direction with each of the second local wiring lines being electrically connected to two second line selection transistors at two ends thereof.

A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both rectification and storage capabilities within the PCM architecture.

The embodiments provide a semiconductor memory device including: a plurality of first wiring lines extending in a first direction, the first wiring lines being provided in a second direction intersecting the first direction; a plurality of second wiring lines extending in the second direction, the second wiring lines being provided in the first direction; a plurality of memory cells provided in the intersections between the first wiring lines and the second wiring lines, each memory cell having a first stack structure comprising at least a variable resistor film; a contact extending in a third direction intersecting the first and second directions, the contact having a first end connected to one of the first wiring lines or one of the second wiring lines, the contact having a second stack structure having a stack of a plurality of films; and a wiring layer connected to a second end of the contact. At least some of the films of the second stack structure have generally the same third direction position and film thickness as at least some of layers of the first stack structure. And, the second stack structure has a higher metal ratio than the first stack structure.

A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

A memory device having an array area and a periphery area is provided. The memory device includes a substrate, an isolation layer formed in the substrate, a first doped region formed on the isolation layer in the array area, a second doped region formed on the first doped region, a metal silicide layer formed on the second doped region, and a metal silicide oxide layer formed on the metal silicide layer.