A light source for plant cultivation includes at least two light emitting devices supplying light to a plant. Each of the light emitting devices includes a first semiconductor layer doped with a first conductivity type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a second conductivity type dopant different from the first conductivity type dopant, and an active layer interposed between the first semiconductor layer and the second semiconductor layer. The light emitting devices emit light towards the plant under a different condition in terms of at least one of wavelength, radiation intensity, and emission timing to control the type and content of phytochemicals in the plant.

Disclosed are a color conversion structure, a display apparatus, and a method of manufacturing the display apparatus. The color conversion structure has a transferable film structure which includes a base layer and a quantum dot layer provided on the base layer.

Provided are a light-emitting panel, a display device, and a backlight module. The light-emitting panel includes a driving substrate and multiple light-emitting elements located on a side of the driving substrate. The multiple light-emitting elements include first light-emitting elements on a side of the driving substrate close to an edge of the driving substrate. The minimum distance between the first light-emitting elements and the edge of the driving substrate is L1, and the minimum distance between two adjacent light-emitting elements is L2, where 0<L1L2/2.

A display device includes a first voltage line disposed in a first metal layer on a substrate and extending in a first direction, a first transistor including a source electrode disposed in an active layer on the first metal layer and a gate electrode disposed in a second metal layer on the active layer, the first transistor being electrically connected to the first voltage line, a first connection electrode disposed in the second metal layer and integrally formed with the gate electrode of the first transistor, a cover pattern disposed in the second metal layer and spaced apart from the first connection electrode in the first direction, and a first capacitor including a first capacitor electrode disposed in the active layer and electrically connected to the gate electrode of the first transistor, and a second capacitor electrode disposed in the first metal layer and electrically connected to the source electrode of the first transistor. A first side of the cover pattern and a first side of the first connection electrode facing each other overlap the first capacitor electrode in a plan view.

A light board and a carrying device thereof are provided. The light board includes a substrate and at least one support pin. The carrying device includes a plurality of carrying plates, and each carrying plate is used for carrying a light board. Every adjacent carrying plate and light board serve as a group of packaging structure. Each carrying plate is provided with a plurality of plate avoidance holes therein, and each substrate is provided with a plurality of substrate avoidance holes therein. In the group of packaging structure, at least one plate avoidance hole and at least one substrate avoidance hole are corresponding and serve as a avoidance hole group, and a support pin of a light board in a group of packaging structure located below passes through an avoidance hole group in at least one group of packaging structure located above.

Provided is an electronic device, in which a first management module of a first chiplet generates a first request transaction for measuring a latency between the first chiplet and a second chiplet, and transmits the generated first request transaction to the second chiplet through a first interconnect module of the first chiplet, a second management module of the second chiplet generates a first response transaction corresponding to the first request transaction, and transmits the generated first response transaction to the first chiplet through a second interconnect module of the second chiplet, and the latency between the first chiplet and the second chiplet is determined based on a first time at which the first request transaction is generated in the first chiplet and a second time at which the first chiplet receives the first response transaction.

The present disclosure provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes stacked first and second chips, a local word line decoder and a local bit line decoder for controlling an array block are disposed in the second chip, and the first chip forms an electrical connection with the second chip. At least one of the local word line decoder block and the local bit line decoder block formed by the local word line decoder block and the local bit line decoder block respectively is arranged within the top-down projection region of the array block in the second chip.

A package comprises an interposer, comprising an interposer substrate including at least one layer, and a plurality of RDLs formed through at least a portion of the interposer substrate. The package also includes a die device structure comprising at least one device die, and a first test line (TL) structure interposed between the interposer and the die device structure. The first TL structure includes at least one first test line electrically coupled to the at least one device die, at least a portion of the at least one first test line extending beyond a peripheral edge of the die device structure to provide an electrical interface with the at least one device die.

A light emitting element includes a light emitting element core extending in a direction and including first and second semiconductor layers and an element active layer disposed between the first and second semiconductor layers. The light emitting element includes an element electrode layer on the second semiconductor layer of the light emitting element core, and an element insulating film surrounding a side surface of the light emitting element core and a side surface of the element electrode layer. The element electrode layer overlaps the second semiconductor layer in the direction the light emitting element core extends, an area of the element electrode layer in plan view is smaller than an area of the second semiconductor layer in plan view, and the element insulating film completely exposes a surface of the element electrode layer, the surface being opposite to another surface of the element electrode layer facing the second semiconductor layer.

To improve memory cell endurance and erase times for non-volatile memories, such as NAND memory, a sub-block based adaptive erase pulse is used. In a memory structure where the array is composed of blocks that have multiple sub-blocks, after applying an erase pulse to an erase selected block, one of the sub-blocks is erased verified and, if it fails to verify, the next erase pulse's duration is tuned based on the number of memory cells of that sub-block that fail to verify. If the first verified one of the sub-blocks verifies, the other sub-blocks of the erase selected block are erased verified, with the next erase pulse's duration tuned based on the number of the other sub-blocks that fail to verify.