Systems and methods are disclosed for controlling nonequilibrium electron transport process and generating phonons in low dimensional materials. The systems can include a conductive sheet sandwiched between a first insulation layer and a second insulation layer; a first electrode conductively coupled to a first end of the conductive sheet; a second electrode conductively coupled to a second end of the conductive sheet; and a current source conductively coupled to the first electrode and the second electrode and configured to pass a current from the first electrode through the conductive sheet to the second electrode such that current generates a drift velocity of electrons in the conductive sheet that is greater than the speed of sound to generate phonons.

A method includes forming a stacked structure of a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked in a first direction over a substrate, the first semiconductor layers being thicker than the second semiconductor layers. The method also includes patterning the stacked structure into a first fin structure and a second fin structure extending along a second direction substantially perpendicular to the first direction. The method further includes removing the first semiconductor layers of the first fin structure to form a plurality of nanowires. Each of the nanowires has a first height, there is a distance between two adjacent nanowires along the vertical direction, and the distance is greater than the first height. The method includes forming a first gate structure between the second semiconductor layers of the first fin structure.

A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

A method of forming a thin film transistor (TFT) that includes forming a low temperature polysilicon semiconductor layer on a substrate; and implanting first dopant regions on opposing sides of a channel region of the low temperature polysilicon semiconductor layer. The method may further include epitaxially forming second dopant regions on the first dopant regions. The concentration of the conductivity type dopant in the second dopant regions is greater than a concentration of the conductivity type dopant in the first dopant region. The second dopant regions are formed using a low temperature epitaxial deposition process at a temperature less than 350 C.

A differential density absorbent towel paper web comprising at least one ply. The differential density absorbent towel paper web has from about 45% to about 90% of a softwood pulp fiber mixture and from about 10% to about 55% of a hardwood pulp fiber mixture. The softwood pulp fiber mixture has from about 20% to about 89.9% of softwood pulp fibers; from about 0.05% to about 20% cellulose nanofilaments; and, from about 0.05% to about 5.0% of strengthening additive.

A differential density soft sanitary tissue paper web comprising at least one ply. The differential density soft sanitary tissue paper web comprises from about 2% to about 56.5% of a softwood pulp fiber mixture and from about 43.5% to about 99.9% of a hardwood pulp fiber mixture. The softwood pulp fiber mixture comprises from about 0% to about 56.4% of softwood pulp fiber; from about 0.05% to about 20.0% of cellulose nanofilaments; and, from about 0.05% to about 3.0% of strengthening additive.

A device includes a substrate, a stacked structure and a first gate stack. The stacked structure includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked over the substrate. One of the first semiconductor layers has a height greater than a height of one the second semiconductor layers. The first gate stack wraps around the stacked structure.

The present invention provides a process for in situ synthesis of dispersion of ZnO and TiO.sub.2 nanoparticles in an oil medium, wherein the process comprises: (a) providing layered basic zinc hydroxide (LBZ) in an oil medium, containing a dispersant, (b) providing a titanium precursor in the oil medium to obtain a mixture, (c) hydrolyzing the mixture to obtain a suspension, and (d) decomposing the suspension to obtain a dispersion of mixture of ZnO and TiO.sub.2 nanoparticles. The present invention also provides an oil dispersion comprising dispersant stabilized mixture of zinc oxide and titanium dioxide nanoparticles were synthesized through this process. The dispersion contains up to 2.5 Wt % metals loading balanced with dispersant and base oil or dispersant alone. Addition of this dispersion to oil of lubricating viscosity improves the anti-wear property and resulting a low SAPS formulation.

An interconnect structure including a conductive layer, a spacer, a dielectric layer, and a contact is provided. The conductive layer is disposed on a substrate. The spacer is disposed on a sidewall of the conductive layer. The dielectric layer covers the conductive layer and the spacer. The contact is disposed in the dielectric layer and located on the conductive layer.

An efficient solar cell and method of fabricating the same is disclosed. The solar cell includes an n-doped substrate layer. A p-doped buffer layer is disposed on the n-doped substrate layer. A quantum dot absorber stack is disposed on the buffer layer. The absorber stack includes at least one quantum dot layer and one p-doped spacer layer. A p-doped cap layer is disposed on the quantum dot absorber layer. The thickness of the quantum dot layer is less than an electron diffusion length from the depletion region formed by the n-doped substrate layer and the p-doped buffer layer. The quantum dot absorber layer allows for additional photo currents from two-photon absorption from the p-doped cap layer being exposed to a light source.