Patent classifications
C01B33/00
HIGHLY EFFICIENT MANUFACTURING OF SILICON-CARBON COMPOSITES MATERIALS COMPRISING ULTRA LOW Z
Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.
METHODS OF FORMING ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS
An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.
METHODS OF FORMING ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS
An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.
Electronic devices comprising silicon carbide materials
An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.
Electronic devices comprising silicon carbide materials
An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.
CRYSTAL, METHOD OF PRODUCING CRYSTAL, AND METHOD OF SELF-ORGANIZING SILANOL COMPOUND
The present invention provides a crystal comprising a plurality of silanol compounds of at least one selected from the group consisting of a hexamer represented by following formula (1), an octamer represented by following formula (2), and a decamer represented by following formula (3) and having an interaction via a hydrogen bond by at least one hydroxy group between the silanol compounds.
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THERMOSET CERAMIC COMPOSITIONS, INORGANIC POLYMER COATINGS, INORGANIC POLYMER MOLD TOOLING, INORGANIC POLYMER HYDRAULIC FRACKING PROPPANTS, METHODS OF PREPARATION AND APPLICATIONS THEREFORE
Thermoset ceramic compositions and a method of preparation of such compositions. The compositions are advanced organic/inorganic hybrid composite polymer ceramic alloys. The material combines strength, hardness and high temperature performance of technical ceramics with the strength, ductility, thermal shock resistance, density, and easy processing of the polymer. Consisting of a branched backbone of silicon, and alumina, with highly coordinated Si—O—Si or Al—O—Al bonds, the material undergoes sintering at 7 to 300 centigrade for 2 to 94 hours from water at a pH between 0 to 14, humidity of 0 to 100%, with or without vaporous solvents.
THERMOSET CERAMIC COMPOSITIONS, INORGANIC POLYMER COATINGS, INORGANIC POLYMER MOLD TOOLING, INORGANIC POLYMER HYDRAULIC FRACKING PROPPANTS, METHODS OF PREPARATION AND APPLICATIONS THEREFORE
Thermoset ceramic compositions and a method of preparation of such compositions. The compositions are advanced organic/inorganic hybrid composite polymer ceramic alloys. The material combines strength, hardness and high temperature performance of technical ceramics with the strength, ductility, thermal shock resistance, density, and easy processing of the polymer. Consisting of a branched backbone of silicon, and alumina, with highly coordinated Si—O—Si or Al—O—Al bonds, the material undergoes sintering at 7 to 300 centigrade for 2 to 94 hours from water at a pH between 0 to 14, humidity of 0 to 100%, with or without vaporous solvents.
PHOSPHOR AND LIGHT-EMITTING DEVICE
A phosphor which has a main crystal phase having the same crystal structure as that of CaAlSiN.sub.3, wherein the phosphor satisfies conditions of a span value (d90−d10)/d50 of 1.70 or less and a d50 of 10.0 μm or less, as represented with d10, d50, and d90 on a volume frequency measured according to a laser diffraction method; wherein the d10, d50, and d90 on a volume frequency in a particle distribution measured are each a measured by loading 0.5 g of a phosphor into 100 ml of a solution of 0.05% by weight of sodium hexametaphosphate mixed in ion exchange water, and subjecting the resultant to a dispersing treatment for 3 minutes with an ultrasonic homogenizer at an oscillation frequency of 19.5±1 kHz, a chip size of 20φ, and an amplitude of vibration of 32±2 μm, with a chip placed at a central portion.
Sulfide solid electrolyte
Provided is a sulfide solid electrolyte material which has a composition that does not contain Ge, while having a smaller Li content than conventional sulfide solid electrolyte materials, and which has both lithium ion conductivity and chemical stability at the same time. A sulfide solid electrolyte which has a crystal structure represented by composition formula (Li.sub.3.45+β−4αSn.sub.α)(Si.sub.0.36Sn.sub.0.09)(P.sub.0.55−βSi.sub.β)S.sub.4 (wherein α≤0.67, β≤0.33 and 0.43<α+β (provided that 0.23<α≤0.4 when β=0.2 and 0.13<α≤0.4 when β=0.3 may be excluded)), or a crystal structure represented by composition formula Li.sub.7+γSi.sub.γP.sub.1−γS.sub.6 (wherein 0.1≤γ<0.3).