Provided is a sulfide solid electrolyte material which has a composition that does not contain Ge, while having a smaller Li content than conventional sulfide solid electrolyte materials, and which has both lithium ion conductivity and chemical stability at the same time. A sulfide solid electrolyte which has a crystal structure represented by composition formula (Li.sub.3.45+β−4αSn.sub.α)(Si.sub.0.36Sn.sub.0.09)(P.sub.0.55−βSi.sub.β)S.sub.4 (wherein α≤0.67, β≤0.33 and 0.43<α+β (provided that 0.23<α≤0.4 when β=0.2 and 0.13<α≤0.4 when β=0.3 may be excluded)), or a crystal structure represented by composition formula Li.sub.7+γSi.sub.γP.sub.1−γS.sub.6 (wherein 0.1≤γ<0.3).

The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region. The major active region expands or contracts from a first volume to a second volume during a period of a charge and discharge. The device has a catholyte material spatially confined within a spatial region of the cathode region and spatially disposed within spatial regions not occupied by the first active regions. In an example, the catholyte material comprises a lithium, germanium, phosphorous, and sulfur (“LGPS”) containing material configured in a polycrystalline state. The device has an oxygen species configured within the LGPS containing material, the oxygen species having a ratio to the sulfur species of 1:2 and less to form a LGPSO material. The device has a protective material formed overlying exposed regions of the cathode material to substantially maintain the sulfur species within the catholyte material. Also included is a novel dopant configuration of the Li.sub.aMP.sub.bS.sub.c (LMPS) [M=Si,Ge, and/or Sn] containing material.

The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region. The major active region expands or contracts from a first volume to a second volume during a period of a charge and discharge. The device has a catholyte material spatially confined within a spatial region of the cathode region and spatially disposed within spatial regions not occupied by the first active regions. In an example, the catholyte material comprises a lithium, germanium, phosphorous, and sulfur (“LGPS”) containing material configured in a polycrystalline state. The device has an oxygen species configured within the LGPS containing material, the oxygen species having a ratio to the sulfur species of 1:2 and less to form a LGPSO material. The device has a protective material formed overlying exposed regions of the cathode material to substantially maintain the sulfur species within the catholyte material. Also included is a novel dopant configuration of the Li.sub.aMP.sub.bS.sub.c (LMPS) [M=Si,Ge, and/or Sn] containing material.

A positive-electrode active material contains a compound represented by the following composition formula (1):
Li.sub.xMe.sub.yA.sub.zO.sub.αF.sub.β  (1) where Me denotes one or more elements selected from the group consisting of Mn, Co, Ni, Fe, Al, Cu, Nb, Mo, Ti, Cr, Zr, Zn, Na, K, Ca, Mg, Pt, Au, Ru, and W, A denotes one or more elements selected from the group consisting of B, Si, and P, and the following conditions: 1.3≤x≤2.1, 0.8≤y≤1.3, 0<z≤0.2, 1.8≤α≤2.9, and 0.1≤β≤1.2 are satisfied. A crystal structure of the compound belongs to a space group Fm-3m.

A positive-electrode active material contains a compound represented by the following composition formula (1):
Li.sub.xMe.sub.yA.sub.zO.sub.αF.sub.β  (1) where Me denotes one or more elements selected from the group consisting of Mn, Co, Ni, Fe, Al, Cu, Nb, Mo, Ti, Cr, Zr, Zn, Na, K, Ca, Mg, Pt, Au, Ru, and W, A denotes one or more elements selected from the group consisting of B, Si, and P, and the following conditions: 1.3≤x≤2.1, 0.8≤y≤1.3, 0<z≤0.2, 1.8≤α≤2.9, and 0.1≤β≤1.2 are satisfied. A crystal structure of the compound belongs to a space group Fm-3m.

The present disclosure provides a method for manufacturing a silicon-carbon-graphene composite comprising, preparing a suspension in which silicon, carbon source and graphene oxide are dispersed, subjecting the suspension to an aerosol process to form a silicon-carbon source-graphene oxide composite and heat-treating the silicon-carbon source-graphene oxide composite to form a silicon-carbon-graphene composite, and prevents direct contact of the electrolyte, so it can exhibit excellent cycling performance and stability.

An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, including a void inside a primary particle, and a void amount of the void with a fine pore diameter of 100 nm or less is 0.05 cc/g or more and 0.15 cc/g or less.

A method is provided for making high quality silicon sulfide having 4N (99.99% by weight) or better purity.

A method is provided for making high quality silicon sulfide having 4N (99.99% by weight) or better purity.