The invention relates to a process for the purification of pentafluoroethane (R125) containing chloropentafluoroethane (R115). The mixture to be purified is subjected to an extractive distillation, the extractant being selected from dimethylformamide (DMF), dioxane, dimethylsulphoxide (DMSO) and diethylsulphoxide (DESO).

A process for the manufacture of haloalkanes, or more particularly to a process for the manufacture of 1,1,1,3,3-pentachloropropane (HCC-240fa) and/or 1,1,1,3-tetrachloropropane (HCC-250fb). The process includes (a) mixing a catalyst, co-catalyst and a haloalkane starting material under conditions suitable to produce a homogeneous mixture; (b) reacting the homogeneous mixture with a haloalkene and/or alkene starting material under conditions suitable to produce a haloalkane product stream; and (c) recovering a haloalkane product from said product stream.

A process for the manufacture of haloalkanes, or more particularly to a process for the manufacture of 1,1,1,3,3-pentachloropropane (HCC-240fa) and/or 1,1,1,3-tetrachloropropane (HCC-250fb). The process includes (a) mixing a catalyst, co-catalyst and a haloalkane starting material under conditions suitable to produce a homogeneous mixture; (b) reacting the homogeneous mixture with a haloalkene and/or alkene starting material under conditions suitable to produce a haloalkane product stream; and (c) recovering a haloalkane product from said product stream.

A process for the manufacture of haloalkanes, or more particularly to a process for the manufacture of 1,1,1,3,3-pentachloropropane (HCC-240fa) and/or 1,1,1,3-tetrachloropropane (HCC-250fb). The process includes (a) mixing a catalyst, co-catalyst and a haloalkane starting material under conditions suitable to produce a homogeneous mixture; (b) reacting the homogeneous mixture with a haloalkene and/or alkene starting material under conditions suitable to produce a haloalkane product stream; and (c) recovering a haloalkane product from said product stream.

A process is disclosed for making CF.sub.3CFCHF. The process involves reacting CF.sub.3CClFCCl.sub.2F with H.sub.2 in a reaction zone in the presence of a catalyst to produce a product mixture comprising CF.sub.3CFCHF. The catalyst has a catalytically effective amount of palladium supported on a support selected from the group consisting of alumina, fluorided alumina, aluminum fluoride and mixtures thereof and the mole ratio of H.sub.2 to CF.sub.3CClFCCl.sub.2F fed to the reaction zone is between about 1:1 and about 5:1. Also disclosed are azeotropic compositions of CF.sub.3CClFCCl.sub.2F and HF and azeotropic composition of CF.sub.3CHFCH.sub.2F and HF.

A process is disclosed for making CF.sub.3CFCHF. The process involves reacting CF.sub.3CClFCCl.sub.2F with H.sub.2 in a reaction zone in the presence of a catalyst to produce a product mixture comprising CF.sub.3CFCHF. The catalyst has a catalytically effective amount of palladium supported on a support selected from the group consisting of alumina, fluorided alumina, aluminum fluoride and mixtures thereof and the mole ratio of H.sub.2 to CF.sub.3CClFCCl.sub.2F fed to the reaction zone is between about 1:1 and about 5:1. Also disclosed are azeotropic compositions of CF.sub.3CClFCCl.sub.2F and HF and azeotropic composition of CF.sub.3CHFCH.sub.2F and HF.

A process for making a poly alpha-olefin (PAO) having a relatively high vinylidene content (or combined vinylidene and tri-substituted vinylene content) and a relatively low vinyl and/or di-substituted vinylene content, as well as a relatively low molecular weight. The process includes: contacting a feed containing a C.sub.2-C.sub.32 alpha-olefin with a catalyst system comprising activator and a bis-cyclopentadienyl metallocene compound, typically a cyclopentadienyl-benzindenyl group 4 transition metal compound.

A process for making a poly alpha-olefin (PAO) having a relatively high vinylidene content (or combined vinylidene and tri-substituted vinylene content) and a relatively low vinyl and/or di-substituted vinylene content, as well as a relatively low molecular weight. The process includes: contacting a feed containing a C.sub.2-C.sub.32 alpha-olefin with a catalyst system comprising activator and a bis-cyclopentadienyl metallocene compound, typically a cyclopentadienyl-benzindenyl group 4 transition metal compound.

A growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom are disclosed. The growth inhibitor is represented by Chemical Formula 1 [AnBmXo]. In the Chemical Formula 1, A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. Side reactions are suppressed to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

A growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom are disclosed. The growth inhibitor is represented by Chemical Formula 1 [AnBmXo]. In the Chemical Formula 1, A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. Side reactions are suppressed to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.