The present invention involves a radical polymerization initiator comprising an organotellurium compound represented by a formula (1), wherein R.sup.1 represents an alkyl group or the like, each of R.sup.2 and R.sup.3 independently represents a hydrogen atom or the like, and each of R.sup.4, R.sup.5, and R.sup.6 independently represents a hydrogen atom or the like.

The present invention provides: a radical polymerization initiator that is useful for producing a polymer that includes a double bond at the molecular terminal; and a method for producing a polymer that utilizes the radical polymerization initiator.

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The present invention involves a radical polymerization initiator comprising an organotellurium compound represented by a formula (1), wherein R.sup.1 represents an alkyl group or the like, each of R.sup.2 and R.sup.3 independently represents a hydrogen atom or the like, and each of R.sup.4, R.sup.5, and R.sup.6 independently represents a hydrogen atom or the like.

The present invention provides: a radical polymerization initiator that is useful for producing a polymer that includes a double bond at the molecular terminal; and a method for producing a polymer that utilizes the radical polymerization initiator.

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A metal-containing onium salt compound suitable for use as a photodegradable base of a resist composition and a resist composition using the metal-containing onium salt compound are provided, the resist composition having excellent sensitivity to ionizing radiation such as extreme ultraviolet (EUV), excellent resolution and focal depth in lithography, and can reduce line width roughness (LWR) in a fine pattern. The onium salt compound including a specific metal is used as the photodegradable base.

A photosensitive compound which can be suitably used for a resist composition having superior sensitivity with respect to light of short wavelength such as KrF and the like, especially to extreme ultraviolet or electron beam, superior resolution and depth of focus in lithography, and can suppress LER (line edge roughness) in fine pattern, a resist composition using the photosensitive compound, and a manufacturing method of a device is provided. A photosensitive compound including a divalent Te atom is provided.

A photosensitive compound which can be suitably used for a resist composition having superior sensitivity with respect to light of short wavelength such as KrF and the like, especially to extreme ultraviolet or electron beam, superior resolution and depth of focus in lithography, and can suppress LER (line edge roughness) in fine pattern, a resist composition using the photosensitive compound, and a manufacturing method of a device is provided. A photosensitive compound including a divalent Te atom is provided.

Described are metal organochalcognides which are bulk nanomaterials, expressing monolayer properties in their as-synthesized states. Also described are certain novel metal organochalcogenide compositions. Further described are several methods of preparation of metal organochaleogenides, both solution- and vapor deposition-based, and methods of use of the resulting metal chalcogenides in assays and devices.

New Te-salt compounds are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

Provided are an organic salt represented by Formula 1, a photoresist composition including the same, and a pattern method using the same:

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wherein X.sup.+, Y.sup.?, and R.sub.11 to R.sub.13 in Formula 1 are understood by referring to the specification.

Provided are an organic salt represented by Formula 1, a photoresist composition including the same, and a pattern method using the same:

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wherein X.sup.+, Y.sup.?, and R.sub.11 to R.sub.13 in Formula 1 are understood by referring to the specification.

A novel compound for a light emitting device, and an organic light emitting device containing the same are disclosed. The compound for a light emitting device is represented by Formula 1 below:

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