An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: ##STR00001## wherein: L.sup.1 to L.sup.3 are independently substituted or unsubstituted hydrocarbylene, R.sup.1 to R.sup.4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and X.sup.n− is an n-valent anion, where n is an integer of 1 to 3.

A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.

A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.

This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Methods of temporarily enhancing the luster and/or brilliance of a piece of jewelry, a gem stone, or a piece of jewelry including a gem stone including applying a non-aqueous composition to the piece of jewelry, the gem stone, or the piece of jewelry including a gem stone.

Methods of temporarily enhancing the luster and/or brilliance of a piece of jewelry, a gem stone, or a piece of jewelry including a gem stone including applying a non-aqueous composition to the piece of jewelry, the gem stone, or the piece of jewelry including a gem stone.

The present invention relates to an etching composition and a method of producing a MXene. The etching composition of the present invention can stably and quickly produce a MXene at high temperature. The etching composition of the present invention can produce a MXene in high yield. The etching composition of the present invention can easily produce various types of MXenes. A method using the etching composition of the present invention can produce a MXene having excellent electrochemical and mechanical properties.

Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. The methods include forming a stack structure in a staircase region and a core array region, the stack structure including a staircase structure in the staircase region; forming a dielectric layer over the staircase region and a peripheral region outside the stack structure; and polishing the dielectric layer using an auto-stop slurry containing a ceria-based abrasive.

Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. The methods include forming a stack structure in a staircase region and a core array region, the stack structure including a staircase structure in the staircase region; forming a dielectric layer over the staircase region and a peripheral region outside the stack structure; and polishing the dielectric layer using an auto-stop slurry containing a ceria-based abrasive.

A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.