The present invention relates to a threadlike adhesive body including a threadlike core material and an adhesive layer covering a circumferential surface of the core material in a longitudinal direction, in which the core material contains a recycled resin, and a coverage rate of the circumferential surface with the adhesive layer is 50% or more.

An adhesive for semiconductors, the adhesive containing a thermoplastic resin, a thermosetting resin, a curing agent having a reactive group, and a flux compound having an acid group. The adhesive has a calorific value of 20 J/g or less at 60° C. to 155° C. on a DSC curve, which is obtained by differential scanning calorimetry involving heating the adhesive at a rate of temperature increase of 10° C./min.

Provided is a novel pressure-sensitive adhesive sheet that is capable of having good light-blocking properties while having an increased refractive index. The pressure-sensitive adhesive sheet provided by the present invention has a pressure-sensitive adhesive layer comprising a black colorant. The pressure-sensitive adhesive sheet has a refractive index of 1.50 or higher.

A conductive adhesive composition, the composition containing: (A) conductive particles; (B) a thermosetting resin; and (C) a flux activator. The conductive particles contain a metal having a melting point of 200° C. or lower. In a volume-based cumulative particle size distribution of the conductive particles, a cumulative 50% particle diameter D50 is 3 to 10 μm, and a cumulative 10% particle diameter D10 is 2.4 μm or more. The flux activator contains a compound having a hydroxyl group and a carboxyl group.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

A flexible flat cable includes a highly reflective member having a plate shape, light-transmitting signal transmission members spaced apart from each other on a first surface of the highly reflective member, conductive signal transmission members spaced apart from each other on the first surface of the highly reflective member, a highly reflective adhesive member that fixes the light-transmitting signal transmission members and the conductive signal transmission members to the highly reflective member, and couples the highly reflective member to a non-conductive member, the non-conductive member including a first surface in contact with the highly reflective adhesive member, and a second surface opposite to the first surface of the non-conductive member, an adhesive member that is disposed on the second surface of the non-conductive member, and couples an electrical shield member to the non-conductive member, and the electrical shield member coupled to the non-conductive member by the adhesive member.

Provided is a PSA sheet having limited light transmission, increased refractive indices for IR light and VIS light with less wavelength dependence of refractive index and good adhesive properties. The PSA sheet provided by this invention has a PSA layer. The PSA sheet has a total light transmittance below 80%. The PSA layer has a first face and a second face on the opposite side to the first face. The PSA layer comprises high-refractive-index particles. The high-refractive-index particles are concentrated in the first face side of the PSA layer. On the first face, the difference between the refractive index n.sub.VIS at 500 nm wavelength and the refractive index n.sub.IR at 940 nm wavelength is less than 0.03.

A bonding sheet (X) of the present invention includes a matrix resin, a plurality of solder particles, and a plurality of flux particles, and has a sheet thickness T. In the bonding sheet (X), a particle size D.sub.50 of the solder particles is 12 μm or less, a particle size D.sub.50 of the flux particles is 30 μm or less, and a ratio of a particle size D.sub.90 of the solder particles and a particle size D.sub.90 of the flux particles to the sheet thickness T is 0.95 or less.

To provide a PSA sheet having excellent IR-blocking properties. Provided is a PSA sheet having a substrate layer as well as a PSA layer placed on one face of the substrate layer. The PSA sheet has 5% or lower light transmittance in the thickness direction in a wavelength region of 780 nm to 2500 nm.