Patent classifications
C09K11/00
Optical component and its method of manufacture, and light emitting device and its mehtod of manufacture
An optical component includes a support member having a through-hole, a second light-transmissive member disposed inside the through-hole, and having a light incidence face, a light emission face, and an outer peripheral side surface, and at least one functional film selected from a group consisting of a short pass filter, a long pass filter, and a heat dissipation member and disposed on a surface of the second light-transmissive member.
Optical component and its method of manufacture, and light emitting device and its mehtod of manufacture
An optical component includes a support member having a through-hole, a second light-transmissive member disposed inside the through-hole, and having a light incidence face, a light emission face, and an outer peripheral side surface, and at least one functional film selected from a group consisting of a short pass filter, a long pass filter, and a heat dissipation member and disposed on a surface of the second light-transmissive member.
Light emitting device having a triple phosphor fluorescent member
A light emitting device includes a light emitting element of a peak emission wavelength in a range of 430 nm to 470 nm and a fluorescent member. The fluorescent member includes a first phosphor including a silicate having a composition that contains at least one element selected from the group consisting of Ca, Sr, and Ba, at least one element selected from the group consisting of Cl, F, and Br, and Mg and Eu, a second phosphor including an aluminate that has a composition containing Lu and Ce, and a third phosphor having emission spectrum with a half bandwidth of 86 nm or less and including a silicon nitride that has a composition containing at least one of Sr or Ca, and containing Al and Eu.
Light emitting device having a triple phosphor fluorescent member
A light emitting device includes a light emitting element of a peak emission wavelength in a range of 430 nm to 470 nm and a fluorescent member. The fluorescent member includes a first phosphor including a silicate having a composition that contains at least one element selected from the group consisting of Ca, Sr, and Ba, at least one element selected from the group consisting of Cl, F, and Br, and Mg and Eu, a second phosphor including an aluminate that has a composition containing Lu and Ce, and a third phosphor having emission spectrum with a half bandwidth of 86 nm or less and including a silicon nitride that has a composition containing at least one of Sr or Ca, and containing Al and Eu.
HYBRID MATERIAL FOR USE AS COATING MEANS IN OPTOELECTRONIC COMPONENTS
The invention relates to the use of a hybrid material comprising a) an organopolysilazane material and b) at least one surface-modified nanoscale inorganic oxide as coating material for producing transparent layers having a thickness of less than 500 m in optoelectronic components.
HYBRID MATERIAL FOR USE AS COATING MEANS IN OPTOELECTRONIC COMPONENTS
The invention relates to the use of a hybrid material comprising a) an organopolysilazane material and b) at least one surface-modified nanoscale inorganic oxide as coating material for producing transparent layers having a thickness of less than 500 m in optoelectronic components.
SCINTILLATOR, SCINTILLATOR ARRAY, RADIATION DETECTOR, AND RADIATION EXAMINATION DEVICE
To suppress a decrease in optical output of a scintillator. A scintillator includes a sintered body of 1 mm.sup.3 or less that contains a rare earth oxysulfide. In a composition image obtained by observing a cross-section of the sintered body under a scanning electron microscope, the sum of the number of oxide regions that contain at least one of a rare earth oxide different from the rare earth oxysulfide and an impurity metal oxide and the number of sulfide regions that contain at least one of a rare earth sulfide different from the rare earth oxysulfide and an impurity metal sulfide, which exist in a unit area of 500 m500 m, is five or less (including zero). Each of the oxide regions and the sulfide regions has a major axis of 100 m or less (including zero).
AMINE COMPOUND AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME
An amine compound represented by Formula 1, and an organic light emitting device including the same:
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wherein X may be selected from the compounds represented by Formula 2:
##STR00002##
When the amine compound represented by Formula 1 is included in the hole transport region of an organic light emitting device, the organic light emitting device may achieve long lifespan and high efficiency.
Oxynitride orange-red fluorescent substance and light-emitting film or sheet and light-emitting device comprising the same
An oxynitride orange-red fluorescent substance and a light-emitting film or sheet and a light-emitting device comprising the same are disclosed. The chemical formula of the oxynitride orange-red fluorescent substance is M.sub.mA.sub.aSi.sub.xN.sub.yO.sub.z:dR in which the element M is one or more of the elements selected from Ca, Sr and Ba, the element A is Al or a mixture of Al with one or more of the elements selected from Ga, La, Sc and Y, the element R is one or more of the elements selected from Ce, Eu and Mn, 0.8m1.2, 1<a<1.7, 1<x<1.7, 3<y<4.2, 0<z<0.7, and 0.001d0.2.
STACKED STRUCTURE, FABRICATION METHOD OF THE STACKED STRUCTURE, AND SEMICONDUCTOR DEVICE INCLUDING THE STACKED STRUCTURE
Disclosed is a stacked structure which may include a buffer layer, a first semiconductor layer, and a second semiconductor layer. The buffer layer and the first semiconductor layer are stacked with each other in a vertical direction. The second semiconductor layer is in contact with a side surface of the first semiconductor layer and may surround at least a part of the first semiconductor layer in a plane perpendicular to the vertical direction. Each of the first semiconductor layer and the second semiconductor layer may include a Group III-V material or a Group III nitride material. Crystallinity of the first semiconductor layer may be higher than crystallinity of the second semiconductor layer. The buffer layer may be exposed from the second semiconductor layer in the vertical direction.