A strain gauge includes a flexible substrate and a functional layer formed of a metal, an alloy, or a metal compound, the functional layer being directly on one surface of the substrate. The strain gauge includes a resistor formed of a film that includes Cr, CrN, and Cr.sub.2N and that is formed with α-Cr as a main component. The functional layer includes a function of promoting crystal growth of α-Cr and forming an α-Cr based film.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

A method of manufacturing a crystalline layer of material on a surface, the crystalline layer including lithium, at least one transition metal and at least one counter-ion. The method includes the following steps: generating a plasma using a remote plasma generator, plasma sputtering material from a first target including lithium onto a surface of or supported by a substrate, there being at least a first plume corresponding to trajectories of particles from the first target onto the surface, and plasma sputtering material from a second target including at least one transition metal onto the surface, there being at least a second plume corresponding to trajectories of particles from the second target onto the surface. The first target is positioned to be non-parallel with the second target, the first plume and the second plume converge at a region proximate to the surface of or supported by the substrate, and the crystalline layer is formed on the surface at the region.

A film forming apparatus for forming a metal oxide film on a substrate, includes: a substrate support part configured to support the substrate; a heating mechanism configured to heat the substrate supported by the substrate support part; a processing container in which the substrate support part is provided; a holder configured to hold a metal material target inside the processing container and connected to a power source; a gas supply part configured to supply an oxygen gas into the processing container; and a controller, wherein the controller is configured to control the heating mechanism, the power source, and the gas supply part so as to execute alternately and repeatedly: forming a predetermined film on the substrate inside the processing container by reactive sputtering in a metal mode; and forming a target metal oxide film by causing the predetermined film to react with an oxygen gas inside the processing container.

A method for establishing a desired distribution of partial gas pressure along a surface of a substrate when vacuum treating such substrate includes feeding a gas towards the substrate through openings distributed all along the entire periphery of the substrate. The gas is fed or removed at a gas line which communicates exclusively with a set of the openings.

The present invention provides a method for manufacturing a thin film foil, wherein a metal thin film layer is formed on a base substrate through a vacuum deposition process to form an ultra-thin film foil having a thickness of 5 μm or less, preferably 2 μm or less. The provided method for manufacturing a thin film foil comprises the steps of: preparing a base substrate having release properties; preparing a metal raw material; vacuum-depositing the metal raw material on the base substrate to form a metal layer on the base substrate; and separating the base substrate from the metal layer to form a thin film foil, wherein one of a BeCu alloy, a Cu—Ag—Cr ternary alloy, an Ag alloy, a CuMo alloy, and a CuFeP alloy is prepared as the metal raw material.

A method for operating a coating system for producing layer systems includes the steps of: (i) coating a layer system in a coating facility; (ii) determining a spectral actual measuring plot for the layer system in an optical measuring system; (iii) determining an actual data set by fitting a simulation target measuring plot to the actual measuring plot; (iv) determining actual layer parameters as computed actual layer parameters from the simulation target measuring plot by simulation of the layer system using the actual data set; (v) outputting the actual data set and the computed actual layer parameters at least to a decision system; (vi) providing quality requirement data; and (vii) deciding on an approval of the layer system in the decision system on the basis of a comparison of at least the actual data set, the computed actual layer parameters and. the quality requirement data. A coating system for producing layer systems is also disclosed.

The invention relates to a method of forming a coating for deposition to non-metallic surfaces, comprising the steps of applying (120) a semiconductor material to a substrate to form a semiconductor material layer and simultaneously or subsequently applying (140) metallic material or additional semiconductor material, wherein the metallic material or additional semiconductor material is introduced into the semiconductor material layer in a targeted manner to tailor the optical properties of the coating.

A laminate including a base material and a resin layer provided on at least one surface of the base material. The resin layer is formed of a heat- or active energy ray-curable resin composition, and an outermost surface of the laminate on the one surface side of the base material has an unevenness containing a wrinkle structure.

The invention refers to negative electrode plate, preparation method thereof and electrochemical device. The negative electrode plate comprises: a negative current collector, a negative active material layer, and an inorganic dielectric layer which are provided in a stacked manner; the negative active material layer comprises opposite first surface and second surface, wherein the first surface is disposed away from the negative current collector; the inorganic dielectric layer is disposed on the first surface of the negative active material layer and consists of an inorganic dielectric material. The negative electrode plate provided by the application is useful in an electrochemical device, and can result in an electrochemical device having simultaneously excellent safety performance and cycle performance.