A method for preparing thin double-structured composite corrosion resistant and/or passivating coatings that consist of a thin metal oxide-hydroxide subcoating prepared by anodizing the metal substrate materials near-surface part and then provided with an atomic layer deposition (ALD) topmost nanocoating, of e.g. oxide, nitride, carbonate, carbide etc. or their mixes or laminates, or laminates with ceramic and metallic layers, or laminates with inorganic or organic polymers and ceramic layers.

In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.

A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat transfer gas discharge pipe, a heat transfer gas supplied to a back surface of the substrate electrostatically-attracted by the electrostatic chuck. The evacuation unit is connected via a power supply line to the direct voltage source, generates regenerative power, and supplies the regenerative power to the direct voltage source.

A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed so as to surround the processing chamber, an RF induction coil disposed above the top surface, a direct-current magnetic field generator for supplying a direct-current magnetic field to the inner space, and an RF cut filter connected to a direct current (DC) power supply and connected to the direct-current magnetic field generator. The RF cut filter includes a first capacitor connected to a positive terminal of the DC power supply and to ground, and a second capacitor connected to a negative terminal of the DC power supply and to ground.

A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

An abrasive tip comprises an additive layer having an additive; the additive is configured to prevent adhesion of an organic component from an abradable seal onto an abrasive blade tip.

An abrasive tip comprises an additive layer having an additive; the additive is configured to prevent adhesion of an organic component from an abradable seal onto an abrasive blade tip.

A method of treating silicon carbide fibers comprises phosphating heat treatment in a reactive gas so as to form a coating around each fiber for protection against oxidation. The coating comprises a surface layer of silicon pyrophosphate crystals and at least one underlying bilayer system comprising a layer of a phosphosilicate glass and a layer of microporous carbon.

A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator.