A material feeding apparatus is disclosed. An apparatus for removing a surface oxide of a metal material and feeding the metal material to a melting furnace, according to an embodiment of the present disclosure, includes: a housing including a material dropping chamber for feeding and discharging the metal material and a material etching chamber for performing a plasma etching process; and a pretreatment casing configured to reciprocate between the material dropping chamber and the material etching chamber in the housing, wherein the pretreatment casing receives the metal material from the material dropping chamber to store the metal material, moves to the material etching chamber to plasma-etch a surface oxide layer of the stored metal material, and then returns to the material dropping chamber to drop the etched metal material into the melting furnace.

A material feeding apparatus is disclosed. An apparatus for removing a surface oxide of a metal material and feeding the metal material to a melting furnace, according to an embodiment of the present disclosure, includes: a housing including a material dropping chamber for feeding and discharging the metal material and a material etching chamber for performing a plasma etching process; and a pretreatment casing configured to reciprocate between the material dropping chamber and the material etching chamber in the housing, wherein the pretreatment casing receives the metal material from the material dropping chamber to store the metal material, moves to the material etching chamber to plasma-etch a surface oxide layer of the stored metal material, and then returns to the material dropping chamber to drop the etched metal material into the melting furnace.

There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.

There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.

A method of etching a copper (Cu) thin film and a Cu thin film prepared therefrom, the method including patterning a hard mask layer on the Cu thin film to form a hard mask on the Cu thin film; forming a plasma of a mixed gas, the mixed gas including an inert gas and an organic chelator material including an amine group, the mixed gas not including a halogen gas or a halide gas; and etching the Cu thin film through the hard mask using the plasma generated in the forming of the plasma of the mixed gas.

A method of etching a copper (Cu) thin film and a Cu thin film prepared therefrom, the method including patterning a hard mask layer on the Cu thin film to form a hard mask on the Cu thin film; forming a plasma of a mixed gas, the mixed gas including an inert gas and an organic chelator material including an amine group, the mixed gas not including a halogen gas or a halide gas; and etching the Cu thin film through the hard mask using the plasma generated in the forming of the plasma of the mixed gas.

The present invention relates primarily to a method of fabrication of one or more free-standing micromachined parts. The method includes performing reactive ion etching of photoresist and tungsten-based layers supported on a carrier substrate to thereby define one or more micromachined parts, followed by separating the resulting one or more micromachined parts from the carrier substrate such that the parts are free-standing. The invention also relates to tungsten-based microprobe obtainable by such a method, wherein the microprobe has a substantially square or rectangular cross-section in a direction perpendicular to a longitudinal axis of the microprobe, and to probe cards comprising a plurality of such microprobes.

The present invention relates primarily to a method of fabrication of one or more free-standing micromachined parts. The method includes performing reactive ion etching of photoresist and tungsten-based layers supported on a carrier substrate to thereby define one or more micromachined parts, followed by separating the resulting one or more micromachined parts from the carrier substrate such that the parts are free-standing. The invention also relates to tungsten-based microprobe obtainable by such a method, wherein the microprobe has a substantially square or rectangular cross-section in a direction perpendicular to a longitudinal axis of the microprobe, and to probe cards comprising a plurality of such microprobes.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.