Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

A method for growing beta phase of gallium oxide (β-Ga.sub.2O.sub.3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga.sub.2O.sub.3 or at the melting temperature (MT) or after complete melting of the Ga.sub.2O.sub.3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga.sub.2O.sub.3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).

A rare earth halide scintillation material the chemical formula of the material being CeBr.sub.3+x, wherein 0.0001x0.1. The rare earth halide scintillation material has excellent scintillation properties including high light output, high energy resolution, and fast decay.

A rare earth halide scintillation material the chemical formula of the material being CeBr.sub.3+x, wherein 0.0001x0.1. The rare earth halide scintillation material has excellent scintillation properties including high light output, high energy resolution, and fast decay.

An indium phosphide substrate, a method of inspecting thereof and a method of producing thereof are provided, by which an epitaxial film grown on the substrate is rendered excellently uniform, thereby allowing improvement in PL characteristics and electrical characteristics of an epitaxial wafer formed using this epitaxial film. The indium phosphide substrate has a first main surface and a second main surface, a surface roughness Ra1 at a center position on the first main surface, and surface roughnesses Ra2, Ra3, Ra4, and Ra5 at four positions arranged equidistantly along an outer edge of the first main surface and located at a distance of 5 mm inwardly from the outer edge. An average value m1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.5 nm or less, and a standard deviation σ1 of the surface roughnesses Ra1, Ra2, Ra3, Ra4, and Ra5 is 0.2 nm or less.

According to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes one or more vents enabling improved heat flow throughout the system. Also, according to one or more additional embodiments, the functionality of the crucible support is adapted to be leveraged by a crucible manipulating device. For example, the support plate may have a plurality of slots for insertion of a “lifting arm”, such that the entire support plate assembly, as well as the crucible itself while on the support assembly, may be lifted and transported as a single unit.

A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.

A method and apparatus for measuring a melt back of a seed in a boule are provided. The method includes lifting a boule once it has been produced using an actuating device onto a support table to automatically manipulate the boule from a furnace to the support table. The melt back of the seed is then automatically measured using a vision system that is installed on an imaging device disposed below the boule.

Methods and systems for low etch pit density 6 inch semi-insulating gallium arsenide wafers may include a semi-insulating gallium arsenide single crystal wafer having a diameter of 6 inches or greater without intentional dopants for reducing dislocation density, an etch pit density of less than 1000 cm.sup.−2, and a resistivity of 1×10.sup.7 Ω-cm or more. The wafer may have an optical absorption of less than 5 cm.sup.−1 less than 4 cm.sup.−1 or less than 3 cm.sup.−1 at 940 nm wavelength. The wafer may have a carrier mobility of 3000 cm.sup.2/V-sec or higher. The wafer may have a thickness of 500 μm or greater. Electronic devices may be formed on a first surface of the wafer. The wafer may have a carrier concentration of 1.1×10.sup.7 cm.sup.−3 or less.

A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.