A Group VB element doped with a β-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the β—Ga.sub.2O.sub.3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10.sup.−4 to 1×10.sup.4Ω.Math.cm, and/or the carrier concentration is in the range of 5×10.sup.12 to 7×10.sup.20/cm.sup.3. The preparation method comprises steps of: mixing M.sub.2O.sub.5 and Ga.sub.2O.sub.3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity β-Ga.sub.2O.sub.3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.

A Group VB element doped with a β-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the β—Ga.sub.2O.sub.3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10.sup.−4 to 1×10.sup.4Ω.Math.cm, and/or the carrier concentration is in the range of 5×10.sup.12 to 7×10.sup.20/cm.sup.3. The preparation method comprises steps of: mixing M.sub.2O.sub.5 and Ga.sub.2O.sub.3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity β-Ga.sub.2O.sub.3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.

A composite has a solid-state structure, silicate, lithium ions, and at least one paramagnetic or diamagnetic element, which is different from lithium silicon, and oxygen. The solid-state structure has two areas in which the solid-state structure forms an identical crystal orientation. The areas are arranged at a distance of at least one millimeter from each other. A method has a quenching step in which a solid-state structure of a composite is produced, which differs from an ambient temperature solid-state structure. The composite produced by the method has silicate, lithium ions, and an element that is different from lithium, silicon, and oxygen. The method produces at least one gram of the phase pure composite in the quenching step.

A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

A method for producing or repairing a three-dimensional workpiece, the method including: depositing a sequence of layers of a raw material powder onto a substrate; after depositing a raw material powder layer, irradiating selected areas of the deposited raw material powder layer with an electromagnetic or particle radiation beam in a site selective manner in accordance with an irradiation pattern which corresponds to a geometry of at least part of a layer of the three-dimensional workpiece to be produced, the irradiation pattern including a scan pattern, wherein the substrate has a substantially single-crystalline microstructure; the irradiation is controlled so as to maintain the single-crystalline microstructure and to produce a metallurgical bond between sites of the raw material powder layer that are irradiated and the substrate and/or a previously deposited raw material powder layer, defining the scan pattern, so as to be one of a unidirectional or two directional scan pattern, rotating the scan pattern between two subsequently deposited raw material powder layers by a predetermined angle.

A method for producing or repairing a three-dimensional workpiece, the method including: depositing a sequence of layers of a raw material powder onto a substrate; after depositing a raw material powder layer, irradiating selected areas of the deposited raw material powder layer with an electromagnetic or particle radiation beam in a site selective manner in accordance with an irradiation pattern which corresponds to a geometry of at least part of a layer of the three-dimensional workpiece to be produced, the irradiation pattern including a scan pattern, wherein the substrate has a substantially single-crystalline microstructure; the irradiation is controlled so as to maintain the single-crystalline microstructure and to produce a metallurgical bond between sites of the raw material powder layer that are irradiated and the substrate and/or a previously deposited raw material powder layer, defining the scan pattern, so as to be one of a unidirectional or two directional scan pattern, rotating the scan pattern between two subsequently deposited raw material powder layers by a predetermined angle.

In general, the systems and methods described in this application relate to laser-induced nucleation in continuous flow. A method of laser-induced nucleation in continuous flow includes injecting a saturated solution, undersaturated solution, or supersaturated solution through an inlet of a device. The method can include converting the saturated solution or undersaturated solution into supersaturated solution by changing a temperature of the saturated solution or undersaturated solution. The method can include passing one or more laser pulses through the supersaturated solution within the device. The method can include flowing the saturated solution, undersaturated solution, or the supersaturated solution through an outlet of the device.

For evaluating a polycrystalline silicon rod to be used as a raw material for production of FZ Si single crystals, novel evaluation values (values of characteristicsamount of crystals) including the amount of crystals grown in the growth direction (radial direction) are defined and the homogeneity in crystal characteristics in the growth direction (radial direction) is evaluated. Specifically, the homogeneity of the polycrystalline rod is evaluated by sampling a plurality of specimen plates each having, as a principal plane thereof, a cross-section perpendicular to a radial direction of the polycrystalline rod grown by a Siemens method at equal intervals in the radial direction, determining values of characteristics of the crystals of the specimen plates by measurements, and by using evaluation values obtained by multiplying amounts of the crystals (relative amounts of the crystals) at sites where the specimen plates have been sampled by the values of the crystal characteristics.

For evaluating a polycrystalline silicon rod to be used as a raw material for production of FZ Si single crystals, novel evaluation values (values of characteristicsamount of crystals) including the amount of crystals grown in the growth direction (radial direction) are defined and the homogeneity in crystal characteristics in the growth direction (radial direction) is evaluated. Specifically, the homogeneity of the polycrystalline rod is evaluated by sampling a plurality of specimen plates each having, as a principal plane thereof, a cross-section perpendicular to a radial direction of the polycrystalline rod grown by a Siemens method at equal intervals in the radial direction, determining values of characteristics of the crystals of the specimen plates by measurements, and by using evaluation values obtained by multiplying amounts of the crystals (relative amounts of the crystals) at sites where the specimen plates have been sampled by the values of the crystal characteristics.