A fire testing device for testing fire-resistance properties of a test subject includes a cavity, a heat source adapted to heat the cavity, and a removable separation plate configured to subdivide the cavity into a first chamber and a second chamber. The heat source is arranged in the first changer and adapted to preheat the first chamber. The second chamber includes an opening adapted to receive the test subject. A fire-resistance test of the test subject may include activating the removable separation plate to subdivide the cavity into the first chamber and the second chamber, arranging the test subject at an opening of the second chamber, preheating the first chamber to a defined temperature using the heat source, deactivating the removable separation plate to provide an undivided cavity, and sustaining a heat supply to the cavity using the heat source.

The semiconductor wafer is preheated by halogen lamps and then heated by a flash of light irradiation from flash lamps. A length of a light emission waveform of a flash of light applied from the flash lamps can be adjusted as appropriate. A data collection cycle (sampling interval) of a radiation thermometer that measures a surface temperature of the semiconductor wafer is made variable, and the longer the light emission waveform of the flash of light, the longer the data collection cycle. Even when a rising and falling time of the surface temperature of the semiconductor wafer changes due to the length of the light emission waveform of a flash of light, a temperature change can be included in a temperature profile with a constant number of data points until the surface temperature rises, goes through a maximum reaching temperature, and falls.

A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.

A batch furnace for annealing material, in particular a single chamber furnace or single coil furnace, with a furnace housing. The batch furnace has a closable charging opening, a receiving chamber for receiving furnace material, and a device for convective heat transfer onto the furnace material by a heat transfer medium. The batch furnace includes at least one fan, which is arranged in the furnace housing, at least one heating device for the heat transfer medium and/or at least one inlet for an externally heated heat transfer medium, wherein the heating device and/or the inlet is arranged directly in front of the intake side or directly behind the pressure side of the fan or circumferentially in an annular gap between the fan and the furnace housing, and a receiving chamber for the furnace material, which is arranged on the pressure side of the fan.

Disclosed is a substrate treating apparatus with a baking unit for heating a substrate to which a treating liquid that generates sublimate through heating is applied to bake a surface of the substrate to form a coat film. The apparatus includes the following elements: a first bake group, a second bake group, a first exhaust pipe that forms a flow path of exhaust gases from the first bake group with its end being in fluid communication with an exhaust gas processor that processes the exhaust gases, a second exhaust pipe that forms a flow path of exhaust gases from the second bake group, and a junction provided at a midstream of the first exhaust pipe and in fluid communication with a downstream side of the second exhaust pipe.

This heating furnace includes a housing having a pair of side walls, a workpiece support material configured to support a workpiece having a flat plate shape in a horizontal posture between the pair of side walls, a planar heater configured to heat the workpiece supported by the workpiece support material from above or below, a power feeding device configured to feed power to the planar heater, and a heater support material configured to support the planar heater in a horizontal posture. The planar heater has a plurality of heating bodies disposed side by side in a conveyance direction and in a left-right direction orthogonal to the conveyance direction in a plan view, the plurality of heating bodies each have a heating wire and a sintered body configured to accommodate the heating wire, include two or more kinds of heating bodies having different dimensions or shapes, and include an intermediate heating body alongside which other heating bodies are disposed at both end portions in the left-right direction, and the power feeding device has a feeding unit configured to feed power to each of the heating bodies from the side wall.

This heating furnace includes a housing having a pair of side walls, a workpiece support material configured to support a workpiece having a flat plate shape in a horizontal posture between the pair of side walls, a planar heater configured to heat the workpiece supported by the workpiece support material from above or below, a power feeding device configured to feed power to the planar heater, and a heater support material configured to support the planar heater in a horizontal posture. The planar heater has a plurality of heating bodies disposed side by side in a conveyance direction and in a left-right direction orthogonal to the conveyance direction in a plan view, the plurality of heating bodies each have a heating wire and a sintered body configured to accommodate the heating wire, include two or more kinds of heating bodies having different dimensions or shapes, and include an intermediate heating body alongside which other heating bodies are disposed at both end portions in the left-right direction, and the power feeding device has a feeding unit configured to feed power to each of the heating bodies from the side wall.

A heating furnace comprising a furnace body; an accommodation space in the furnace body, the accommodation space accommodating a work; an exhaust port; and a heat insulator provided between the accommodation space and the exhaust port, the heat insulator including a pillar-shaped honeycomb structure including ceramic partition walls sectioning a plurality of cells extending from one bottom to another bottom.

An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the banks includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the banks includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the banks has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.

A hinged protective collar for a kiln with rigid first and second body portions, each with a shape and size corresponding to the shape and size of a portion of a peripheral edge surface of the kiln sidewall and a hinge structure that pivotally couples the first and second body portions so they can be pivoted from a collapsed configuration to an expanded, use configuration. For a kiln with a faceted shape, each of the first and second body portions has a given number of corresponding facets. The hinged protective collar can span a portion of the periphery of the kiln, or the hinged protective collar could span 360 degrees and could have first and second hinge structures coupling the first and second body portions. The first and second body portions can have upturned proximal and, additionally or alternatively, distal end portions to prevent damage to kiln brick.