Disclosed is a sintering furnace comprising a furnace body and a lifting device, wherein the furnace body comprises a furnace chamber (10) and a furnace mouth (20), the furnace chamber (10) is connected with the furnace mouth (20), wherein the sintering furnace further comprises a sealing member (30) provided at the lifting device; when the sintering furnace is in a loading or unloading condition, the sealing member (30) blocks the furnace mouth (20). When the sintering furnace is in an unloading condition, the sealing member (30) can block the furnace mouth (20), the furnace chamber (10) does not contact with the outside directly, thus the temperature in the furnace chamber (10) will not drop sharply, and the service life of the sintering furnace will be increased.

Disclosed is a sintering furnace comprising a furnace body and a lifting device, wherein the furnace body comprises a furnace chamber (10) and a furnace mouth (20), the furnace chamber (10) is connected with the furnace mouth (20), wherein the sintering furnace further comprises a sealing member (30) provided at the lifting device; when the sintering furnace is in a loading or unloading condition, the sealing member (30) blocks the furnace mouth (20). When the sintering furnace is in an unloading condition, the sealing member (30) can block the furnace mouth (20), the furnace chamber (10) does not contact with the outside directly, thus the temperature in the furnace chamber (10) will not drop sharply, and the service life of the sintering furnace will be increased.

A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

An apparatus for treating a substrate includes a process chamber having a process space inside, a support unit that supports the substrate in the process space, a heating unit that is provided inside the support unit and that heats the substrate, an exhaust unit that evacuates the process space, and a gas supply unit that supplies a gas into the process space, and the gas supply unit supplies the gas at a temperature selected from a first temperature and a second temperature.

Embodiments of the inventive concept provides an apparatus for treating a substrate. An embodiment of the inventive concept comprises a housing having a process space therein; and a supporting unit supporting a substrate in the process space, and the supporting unit comprises a supporting plate supporting the substrate; a heater member provide in the supporting plate and heating the substrate; and a cooling unit provided below the heater member and cooling the supporting plate, the cooling unit comprises a cooling plate spaced apart from the heater member; and a nozzle provided in the cooling plate, and supplying a cooling gas to a bottom surface of the heater member; and a driver moving the cooling plate between a standby position spaced a first distance apart from the heater member and a cooling position spaced a second distance apart from the heater member, the second distance is shorter than the first distance.

The invention relates to a sintering furnace for components made of a sintered material, in particular for dental components, comprising a furnace chamber having a chamber volume (VK) and a chamber inner surface (OK), wherein a heat-up device, a receiving space having a gross volume (VB) located in the chamber volume (VK) and delimited by the heat-up device, and a useful region having a useful volume (VN) located in the gross volume (VB), are disposed in the furnace chamber. The furnace chamber has an outer wall consisting of a plurality of walls having a wall portion to be opened for introduction into the receiving space of a component to be sintered and having an object volume (VO). In the furnace chamber the heat-up device has a thermal radiator having a radiation field which radiator is disposed on at least one side of the receiving space. Said thermal radiator has a specific resistance of 0.1 mm.sup.2/m to 1,000,000 mm.sup.2/m and has a total surface, the maximum of which is three times the chamber inner surface (OK). With this sintering furnace a heat-up temperature of at least 1100 C. can be achieved within 5 minutes at a maximum power input of 1.5 kW.

The present invention relates to a plasma furnace capable of separating and discharging different kinds of molten material, which comprises a furnace body 110; and a heating portion 140 for heating the lateral discharge gate 120, 130, wherein the furnace body comprises a melt discharge portion formed through a lower portion of the melting chamber 101 provided for accommodating molten material; and at least two lateral discharge gates 120, 130 provided at different heights capable of discharging molten material.

A combustion system includes a fuel and oxidant source, a first distal flame holder body, a second distal flame holder body, and a thermal load. The fuel and oxidant source outputs fuel and oxidant. The first and second distal flame holder bodies simultaneously or alternately hold combustion reaction portions of the fuel and oxidant and/or of combustion products. The thermal load receives thermal energy from the first and second combustion reaction portions.

A space oven operates in microgravity environments by forcing convection towards the center through a unique heating element and airflow design. The space oven includes a tubular chamber, a heating rack, a heating system, a cooling system, a hatch, a user interface, a microcontroller, an enclosure, at least one first vent, at least one second vent and at least one temperature sensor. The tubular chamber is the cooking area. The heating rack holds consumables in place. The heating system heats up consumables. The cooling system prevents any overheating. The hatch closes off and allows access to the inside of the tubular chamber. The user interface allows a user to input commands. The microcontroller manages the electronic components. The enclosure protects the tubular chamber. The at least one first vent and the at least one second vent reduce pressure buildup. The at least one temperature sensor monitors the internal temperature.

The present invention provides a substrate heat treatment apparatus for heat treating a substrate, including a bake plate, support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap formed between the inner circumferential wall of the baffle plate and the substrate.