Provided are a single-chip differential free layer push-pull magnetic field sensor bridge and preparation method, the magnetic field sensor bridge comprising: a substrate, a staggered soft magnetic flux concentrator array, and a GMR spin valve or a TMR magnetoresistance sensing unit array having a magnetic sensing axis in an X-direction on the substrate. A soft magnetic flux concentrator comprises sides parallel to an X-axis and a Y-axis, and four corners sequentially labeled as A, B, C and D clockwise from an upper left position. Magnetoresistive sensing units are located at gaps between the soft magnetic flux concentrators. Additionally, the magnetoresistive sensing units corresponding to the A and C corner positions and B and D corner positions of the soft flux concentrators are defined as push magnetoresistive sensing units and pull magnetoresistive sensing units respectively. The push magnetoresistive sensing units are electrically interconnected into one or more push arms, and the pull magnetoresistive sensing units are electrically interconnected into one or more pull arms. The push arms and the pull arms are electrically interconnected to form a push-pull sensor bridge. The present invention has low power consumption, high magnetic field sensitivity, and can measure a magnetic field in the Y-direction.

Provided are a single-chip differential free layer push-pull magnetic field sensor bridge and preparation method, the magnetic field sensor bridge comprising: a substrate, a staggered soft magnetic flux concentrator array, and a GMR spin valve or a TMR magnetoresistance sensing unit array having a magnetic sensing axis in an X-direction on the substrate. A soft magnetic flux concentrator comprises sides parallel to an X-axis and a Y-axis, and four corners sequentially labeled as A, B, C and D clockwise from an upper left position. Magnetoresistive sensing units are located at gaps between the soft magnetic flux concentrators. Additionally, the magnetoresistive sensing units corresponding to the A and C corner positions and B and D corner positions of the soft flux concentrators are defined as push magnetoresistive sensing units and pull magnetoresistive sensing units respectively. The push magnetoresistive sensing units are electrically interconnected into one or more push arms, and the pull magnetoresistive sensing units are electrically interconnected into one or more pull arms. The push arms and the pull arms are electrically interconnected to form a push-pull sensor bridge. The present invention has low power consumption, high magnetic field sensitivity, and can measure a magnetic field in the Y-direction.

A torque sensor for being attached around a magnetostrictive rotating shaft includes a bobbin that is provided coaxially with the rotating shaft, wherein the bobbin includes a resin, a hollow cylindrical shape, and first inclined grooves and second inclined grooves formed on an outer peripheral surface thereof, wherein the first inclined grooves are inclined at a predetermined angle relative to an axial direction, and wherein the second inclined grooves are inclined at a predetermined angle relative to the axial direction in an opposite direction of the first inclined grooves, a first detection coil including an insulated wire wound around the bobbin along the first inclined grooves, a second detection coil including the insulated wire wound around the bobbin along the second inclined grooves, and a measurement portion that detects a inductance variation of the first and second detection coils so as to measure a torque applied to the rotating shaft.

A probe guide plate includes a first silicon substrate having first through-holes formed therein, an insulation layer formed on the first silicon substrate and having an opening on a region in which the first through-holes are arranged, a second silicon substrate arranged on the insulation layer and having second through-holes formed at positions corresponding to the first through-holes, and a silicon oxide layer formed on exposed surfaces of the first silicon substrate and the second silicon substrate.

A probe guide plate includes a first silicon substrate having first through-holes formed therein, an insulation layer formed on the first silicon substrate and having an opening on a region in which the first through-holes are arranged, a second silicon substrate arranged on the insulation layer and having second through-holes formed at positions corresponding to the first through-holes, and a silicon oxide layer formed on exposed surfaces of the first silicon substrate and the second silicon substrate.

A test probe structure having a planar surface and contact locations matched to test hardware is provided. The fabrication of the test probe structure addresses problems related to the possible deformation of base substrates during manufacture. Positional accuracy of contact locations and planarity of base substrates is achieved using dielectric layers, laser ablation, injection molded solder or redistribution layer wiring, and planarization techniques.

A test probe structure having a planar surface and contact locations matched to test hardware is provided. The fabrication of the test probe structure addresses problems related to the possible deformation of base substrates during manufacture. Positional accuracy of contact locations and planarity of base substrates is achieved using dielectric layers, laser ablation, injection molded solder or redistribution layer wiring, and planarization techniques.

A test probe structure having a planar surface and contact locations matched to test hardware is provided. The fabrication of the test probe structure addresses problems related to the possible deformation of base substrates during manufacture. Positional accuracy of contact locations and planarity of base substrates is achieved using dielectric layers, laser ablation, injection molded solder or redistribution layer wiring, and planarization techniques.

A manufacturing method is used for a current sensor including a current measurement circuit configured to include magnetoelectric conversion elements, a first amplification-and-correction circuit configured to amplify an output of the current measurement circuit and correct, based on a set first correction amount, a temperature characteristic of an offset, a second amplification-and-correction circuit configured to amplify an output of the first amplification-and-correction circuit, adjust a sensitivity, and correct, based on a set second correction amount, a magnitude of the offset, and a substrate in which the current measurement circuit, the first amplification-and-correction circuit, and the second amplification-and-correction circuit are provided, wherein after the first correction amount is set based on characteristics of the magnetoelectric conversion elements, the magnetoelectric conversion elements are mounted in the substrate and the second correction amount is set.

A manufacturing method is used for a current sensor including a current measurement circuit configured to include magnetoelectric conversion elements, a first amplification-and-correction circuit configured to amplify an output of the current measurement circuit and correct, based on a set first correction amount, a temperature characteristic of an offset, a second amplification-and-correction circuit configured to amplify an output of the first amplification-and-correction circuit, adjust a sensitivity, and correct, based on a set second correction amount, a magnitude of the offset, and a substrate in which the current measurement circuit, the first amplification-and-correction circuit, and the second amplification-and-correction circuit are provided, wherein after the first correction amount is set based on characteristics of the magnetoelectric conversion elements, the magnetoelectric conversion elements are mounted in the substrate and the second correction amount is set.