An encapsulated structure for a quantum resistance standard according to an embodiment of the present invention includes a base; an object disposed on the base and providing a measurement value of the quantum Hall resistance; two or more conductive lines connected to the object on one end; and a cap isolating the object from outside air.

An electronic device includes a substrate, an electronic element, a transistor, a redistribution layer and a plurality of first bonding pads. The electronic element is disposed on the substrate. The transistor is electrically connected with the electronic element. The plurality of first bonding pads are disposed on the redistribution layer.

A method of manufacturing an electronic device includes the following steps. A substrate is provided, and the substrate has a first surface, a second surface opposite to the first surface and a side surface between the first surface and the second surface. A first circuit is formed on the first surface. A second circuit is formed on the second surface. The first circuit is made to electrically connect with the second circuit. A testing signal is applied to the first circuit and received from the second circuit to verify the electrical connection between the first circuit and the second circuit.

An interface element (20) for a testing apparatus of electronic devices comprises at least one support (21) provided with a plurality of through-openings (22) that house respective interconnections elements (23), which extend between a first end (23a) and a second end (23b). Suitably, the interconnections elements (23) are made of a conductive elastomer that fills the openings (22) of the support (21), each of the interconnection elements (23) forming a conductive channel between different and opposing faces (Fa, Fb) of the support (21).

An object is to enhance the durability of substrates of a probe substrate and/or the probe substrate and a member to be joined.

A probe substrate according to the present disclosure includes: a plurality of electrical contactors respectively brought into electrical contact with a plurality of electrode terminals of a member to be inspected, a joint portion for a member to be joined is provided on one or each of a first surface and a second surface of the probe substrate and the member to be joined is joined to the joint portion with a metal layer that includes, in a metal component, at least 70 atomic percent or more of a transition metal and that is formed by sintering, and/or in a joining surface between a plurality of substrates of the probe substrate, the substrates are joined together with the metal layer formed by sintering, in the metal layer formed by sintering, a plurality of organic component parts and/or voids formed by heating an adhesive composition including a thermoplastic resin are left and the organic component parts and/or the voids included in the metal layer formed by sintering have 5 to 80 area percent in a vertical cross section of the metal layer formed by sintering.

An object is to enhance the durability of substrates of a probe substrate and/or the probe substrate and a member to be joined.

A probe substrate according to the present disclosure includes: a plurality of electrical contactors respectively brought into electrical contact with a plurality of electrode terminals of a member to be inspected, a joint portion for a member to be joined is provided on one or each of a first surface and a second surface of the probe substrate and the member to be joined is joined to the joint portion with a metal layer that includes, in a metal component, at least 70 atomic percent or more of a transition metal and that is formed by sintering, and/or in a joining surface between a plurality of substrates of the probe substrate, the substrates are joined together with the metal layer formed by sintering, in the metal layer formed by sintering, a plurality of organic component parts and/or voids formed by heating an adhesive composition including a thermoplastic resin are left and the organic component parts and/or the voids included in the metal layer formed by sintering have 5 to 80 area percent in a vertical cross section of the metal layer formed by sintering.

A semiconductor component 150 has a semiconductor layer 1 including a winding wire part 10 and a winding return wire part 50 connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side, wherein the semiconductor component is disposed so as to surround an object to be measured.

A current sensor that can be downsized without lowering measurement precision has bus bars, magnetic sensors, each of which measures an induced magnetic field generated from one bus bar, a circuit board on which the magnetic sensors are mounted, a case that fixes the bus bars and circuit board, a lid that closes the case, and in-side magnetic shields provided in the lid. The in-side magnetic shield has cutouts along its circumferential edges. Hole are formed in the lid. From each hole, the outer edges of the cutout of the in-side magnetic shield are exposed. Therefore, when the lid is formed, the distance between adjacent in-side magnetic shields can be shortened when the in-side magnetic shield is positioned by pressing portions in a mold.

A cleaning material, device, and method for predictably cleaning the contact elements and support hardware of a tester interface, such as a probe card and a test socket, in which the cleaning pad has a predetermined configuration appropriate for the particular pin contact elements and a substrate having a defined functionalized surface topology and geometry which can be introduced into the testing apparatus during the normal testing operations. The cleaning material has a predetermined topography with a plurality of functional 3-dimensional (3D) microstructures that provide performance characteristics which are not possible with a non-functionalized and flat surface.

In a method of manufacturing an integrated circuit involving performing an electrostatic discharge (ESD) test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board including an electromagnetic wave receiving module. A frequency spectrum is detected by radiating a second electromagnetic wave on a housing including a third test board including the electromagnetic wave receiving module. A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.