A microfluidic device is provided. In one aspect, the microfluidic device includes a microfluidic channel, and a first actuator including an array of electrodes along the microfluidic channel. The first actuator is configured to generate a a potential wave along the microfluidic channel. Each electrode of the array can see its voltage changing cyclically according to a period multiplied by a natural number, wherein for at least one electrode the natural number equals 1. The cyclically changing voltages of adjacent electrodes can be out of phase. The cyclically changing voltages of every other electrode along the array can be in phase.

A power throttling engine includes a register configured to receive a power throttling signal. The power throttling engine further includes a decoder configured to generate a vector based on a value of the power throttling signal. The value of the power throttling signal is an amount of power throttling of a device. The power throttling engine further includes a clock gating logic configured to receive the vector and further configured to receive a clocking signal. The clock gating logic is configured to remove clock edges of the clocking signal based on the vector to generate a throttled clocking signal.

A shift register includes shift register units, in which at least one shift register unit is coupled to a forestage shift register unit and a post-stage shift register unit, where the at least one shift register unit includes a signal input circuit, a signal output circuit, a pull down circuit and a switching circuit. The signal input circuit electrically coupled to the forestage shift register unit can receive a logic signal from the forestage shift register. The signal output circuit is electrically coupled to the signal input circuit via a control signal terminal and is electrically coupled to the post-stage shift register unit. The signal output circuit can receive a first clock signal. The pull down circuit is electrically coupled to or electrically isolated from the control signal terminal through the switching circuit.

A shift register includes shift register units, in which at least one shift register unit is coupled to a forestage shift register unit and a post-stage shift register unit, where the at least one shift register unit includes a signal input circuit, a signal output circuit, a pull down circuit and a switching circuit. The signal input circuit electrically coupled to the forestage shift register unit can receive a logic signal from the forestage shift register. The signal output circuit is electrically coupled to the signal input circuit via a control signal terminal and is electrically coupled to the post-stage shift register unit. The signal output circuit can receive a first clock signal. The pull down circuit is electrically coupled to or electrically isolated from the control signal terminal through the switching circuit.

Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.

Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted.

The invention discloses a gate driving circuit and a display device. The gate driving circuit includes first to eighth dock signal lines and first to N.sup.th stage first shift registers, where N is an integer greater than or equal to 9. The first to eighth clock signal lines are configured to provide first to eighth clock signals, respectively. The i.sup.th stage first shift register is coupled to one of the first to eighth clock signal lines and receives one of the first to eighth clock signals, a first input signal and a second input signal and outputs an i.sup.th stage first output signal, where i is any integer from 1 to N.

The invention discloses a gate driving circuit and a display device. The gate driving circuit includes first to eighth dock signal lines and first to N.sup.th stage first shift registers, where N is an integer greater than or equal to 9. The first to eighth clock signal lines are configured to provide first to eighth clock signals, respectively. The i.sup.th stage first shift register is coupled to one of the first to eighth clock signal lines and receives one of the first to eighth clock signals, a first input signal and a second input signal and outputs an i.sup.th stage first output signal, where i is any integer from 1 to N.

An output buffer circuit includes an operational amplifier configured to generate an amplifier output voltage signal based on an input voltage signal and on a compensation current, a slew rate compensating circuit configured to generate the compensation current to increase a slew rate of the amplifier output voltage signal based on a difference between the input voltage signal and a feedback voltage signal, an output path circuit connected between the operational amplifier and an output pad, the output path circuit configured to transfer the amplifier output voltage signal to generate a pad output voltage signal through the output pad, and a feedback path circuit, the feedback path circuit connected between the slew rate compensating circuit and a feedback input node that is on the output path circuit, the feedback path circuit configured to generate the feedback voltage signal.

An e-fuse device includes a transferring circuit, a detecting-and-outputting circuit, and a fusing circuit. The transferring circuit transfers an input signal to a data node. The detecting-and-outputting circuit generates an output signal according to the logic level of the data node. The fusing circuit includes an e-fuse cell, a first transistor, a second transistor, and a switch element. The e-fuse cell is coupled between a high-voltage node supplied with the high voltage or a ground and a first node. The first transistor is coupled between the first node and a second node and is controlled by the output signal. The second transistor is coupled between the second node and the ground and is controlled by a fusing signal. The switch element is coupled between the first node and the data node and is controlled by a switch signal.