A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

Examples of synchronized parallel tile computation techniques for large area lithography simulation are disclosed herein for solving tile boundary issues. An exemplary method for integrated circuit (IC) fabrication comprises receiving an IC design layout, partitioning the IC design layout into a plurality of tiles, performing a simulated imaging process on the plurality of tiles, generating a modified IC design layout by combining final synchronized image values from the plurality of tiles, and providing the modified IC design layout for fabricating a mask. Performing the simulated imaging process comprises executing a plurality of imaging steps on each of the plurality of tiles. Executing each of the plurality of imaging steps comprises synchronizing image values from the plurality of tiles via data exchange between neighboring tiles.

An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction, unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.

An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction, unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.

An electron beam irradiation device includes a vacuum chamber having an electron beam generator inside, a vacuum nozzle, and a window foil on a tip of the vacuum nozzle. The electron beam irradiation device further includes an outer pipe surrounding the vacuum nozzle, a cooling-gas supply unit that supplies cooling gas into a coolant passage formed between the vacuum nozzle and the outer pipe, and a heat-conducting transmission foil fitted to the window foil and contacting the tip of the vacuum nozzle. The heat-conducting transmission foil has a value of at least 6310.sup.3, which is determined by dividing a thermal conductivity [W/(m.Math.K)] by a density [kg/m.sup.3], and a tip part of the vacuum nozzle is made of a material having at least a thermal conductivity of copper.

A nail polish curing device with a light absorbing chamber is provided, including: a lower case, an upper case, a control module and a bottom plate. The lower case includes an enclosed wall and an opening on a side of the wall. A chamber is formed by the opening and the wall. The upper case is detachably mounted on the lower case. An upper opening and a recess that serves as a hidden handle are provided on the upper case. The control module is disposed on the upper case and is configured to activate UV light emitting diode module. Herein, a light absorbing layer is provided on the bottom plate and on each surface of the lower case in the chamber. The light absorbing layers are configured to completely absorb UV light emitted by the UV light emitting diode.

Provided is a heat dissipation device capable of uniformly cooling an entire base plate (support member) without generating stress in a heat pipe. A heat dissipation device configured to dissipate heat of a heat source into the air, the heat dissipation device including: a support member disposed such that a side of a first principal surface is in close contact with a heat source; a heat pipe thermally joined to a second principal surface of the support member and configured to transport the heat from the heat source; and multiple heat radiation fins disposed in a space adjoining the second principal surface, thermally joined to the heat pipe, and configured to dissipate the heat transported by the heat pipe, in which the respective heat radiation fins are directly joined to the second principal surface in a region other than a region in which the heat pipe is mounted.

Provided is a heat dissipation device capable of uniformly cooling an entire base plate (support member) without generating stress in a heat pipe. A heat dissipation device configured to dissipate heat of a heat source into the air, the heat dissipation device including: a support member disposed such that a side of a first principal surface is in close contact with a heat source; a heat pipe thermally joined to a second principal surface of the support member and configured to transport the heat from the heat source; and multiple heat radiation fins disposed in a space adjoining the second principal surface, thermally joined to the heat pipe, and configured to dissipate the heat transported by the heat pipe, in which the respective heat radiation fins are directly joined to the second principal surface in a region other than a region in which the heat pipe is mounted.

Provided is an electron beam irradiating device capable of emitting an electron beam from an electron beam generation source surrounded by a vacuum chamber to outside of the vacuum chamber through an electron beam exit window. The electron beam exit window includes: a grid; a window foil allowing the electron beam to pass therethrough; and a frame-shaped pressing member pressing the window foil against the grid. The surface of the grid has a groove section having an annular shape. A metal gasket is pressed between the groove section and the window foil.

Provided is an electron beam irradiating device capable of emitting an electron beam from an electron beam generation source surrounded by a vacuum chamber to outside of the vacuum chamber through an electron beam exit window. The electron beam exit window includes: a grid; a window foil allowing the electron beam to pass therethrough; and a frame-shaped pressing member pressing the window foil against the grid. The surface of the grid has a groove section having an annular shape. A metal gasket is pressed between the groove section and the window foil.