A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al.sub.2O.sub.3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W.Math.cm.sup.-2 and at a temperature of the stack of layers of at most 100° C.

Method for making a gas diffusion layer for an electrode, the method including processing quartz wool with water in a blender to form a suspension, filtering the suspension to remove water and contaminants, to form a cake of entangled quartz fibres, annealing the cake of entangled quartz fibres without complete melting of the fibres to obtain a porous quartz felt having pore size greater than 1 μm and coating the porous quartz felt with a conductive material. Gas diffusion layer for an electrode and photoelectrode including the gas diffusion layer.

Fabricating a capacitor includes performing an oxide formation operation on a sheet of material. The oxide formation operation forms an anode metal oxide on an anode metal. A thermal compression is performed on the sheet of material after the oxide formation operation is performed. The thermal compression applies thermal energy to the sheet of material while applying pressure to the sheet of material. After the thermal compression, the capacitor is assembled such that at least one electrode in the capacitor includes at least a portion of the sheet of material.

A solar cell device having a solid state light absorber region that incorporates a donor-acceptor particle structure. The particle structure includes acceptor particles that generate a flow of electrons in the solid state light absorber region in response to absorbed photons; and donor particles comprising a phosphorescent material, wherein each donor particle is coupled to a group of acceptor particles, and wherein the phosphorescent material absorbs high energy photons and emits lower energy photons that are absorbed by the acceptor particles.

The present disclosure relates to a device that includes a first layer having an active material and a stabilizing material, where the active material includes a semiconductor, the stabilizing material includes at least one of an oligomer, an elastomer, a polymer, and/or a resin, and the stabilizing material provides to the device an improved performance metric compared to a device constructed of the first layer but constructed of only the active material (i.e., in the absence of the stabilizing material).

The present disclosure provides a solid electrolytic capacitor package structure for increasing electrical performances and a method of manufacturing the same, and a capacitor unit thereof. The capacitor unit includes at least one first capacitor, the at least one first capacitor includes a conductive polymer composite material layer. The conductive polymer composite material layer includes a conductive polymer material and a first nanometer material mixed with the conductive polymer material, and the first nanometer material includes a plurality of first fully embedded nanometer structures completely enclosed by the conductive polymer material and a plurality of first partially exposed nanometer structures partially exposed from the conductive polymer material.

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 μFV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.

A process for creating an anode foil for use in an electrolytic capacitor of an implantable cardioverter defibrillator is provided. The process includes placing a partially masked bulk metal foil in an etch electrolyte solution to etch exposed area of the bulk metal foil, removing the etch-resistant mask to expose the unetched areas, widening the bulk metal foil, and partially cutting the bulk metal foil between a plurality of unetched areas to form a partially detached etched foil anode, such that the unetched areas are not cut and the unetched areas serve as attachment tabs to keep the partially detached etched foil anode attached to the bulk metal foil. Additionally, the process may include an oxide formation step, wherein the step of partially cutting the bulk metal foil is performed after the etching and widening steps, and before the oxide formation step.

Provided is a solar cell module and a manufacturing method thereof, and a photovoltaic module. The solar cell module includes a substrate; and conductive layers arranged on a surface of the substrate and separated from each other. Solar sub-cells are provided on a surface of the conductive layer. Grooves are provided between adjacent solar sub-cells to separate the solar sub-cells from each other. Each of the solar sub-cells includes a hole transport layer, a perovskite layer and an electron transport layer that are stacked on the surface of the conductive layer. The hole transport layer of each solar sub-cell includes branch electrodes separated from each other. Each of the branch electrodes contacts an interior of the conductive layer. The solar cell module further includes an electrode. The electrode successively passes through the electron transport layer and the perovskite layer and is connected to the branch electrodes.