A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen.

A photoelectrode, photovoltaic device and photoelectrochemical cell and methods of making are disclosed. The photoelectrode includes an electrode at least partially formed of FeO combined with at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc, and nickel. The electrode may be doped with at least one of lithium, hydrogen, and sodium. The electrode may be alloyed with at least one of magnesium, manganese, zinc, and nickel.

The present application relates to a conductive film, a method for manufacturing the same, and a display device including the same.

A heterostructure comprising at least one carbon nanomembrane on top of at least one carbon layer, a method of manufacture of the heterostructure, and an electronic device, a sensor and a diagnostic device comprising the heterostructure. The heterostructure comprises at least one carbon nanomembrane on top of at least one carbon layer, wherein the at least one carbon nanomembrane has a thickness of 0.5 to 5 nm and the heterostructure has a thickness of 1 to 10 nm.

A flame or gas detection method includes determining non-imaging sensor system detection state for a scene of interest, determining an imaging sensor system detection state for the scene of interest, and validating one of the non-imaging sensor system detection state and the imaging sensor system detection state with the other of the non-imaging sensor system detection state and the imaging sensor system detection state. A flame or gas detecting system detection state is then indicated at a user interface including the validated one of the non-imaging sensor system detection state and the imaging system detection state. Flame or gas detection systems and computer program products are also described.

A first solar cell is electrically connected to a second solar cell electrically and arranged in an array direction. Each of the first and second solar cell comprises: a light-receiving surface; a rear surface; a plurality of n-type side electrodes and p-type side electrodes both formed in the array direction on the rear surface; a wiring member electrically connecting the first solar cell and the second solar cell and arranged over the plurality of n-type side electrodes and the plurality of p-type side electrodes; an n-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of n-type side electrodes, the part facing the wiring member; and a p-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of p-type side electrodes, the part facing the wiring member.

The present invention relates to a solid state switch that may be used as in optically-triggered switch in a variety of applications. In particular, the switch may allow for the reduction of gigawatt systems to approximately shoebox-size dimension. The optically-triggered switches may be included in laser triggered systems or antenna systems.

A method of manufacturing solar cell includes providing a semiconductor substrate. A coating layer is then formed on a plurality of sides. Subsequently, an anti-reflective layer is formed on the layer. Finally at least one first electrode and at least one second electrode are formed. The first and second electrodes respectively and electrically connect to the second conductive amorphous substrate and the semiconductor substrate. The potential induced degradation is greatly reduced.

A back side illuminated (BSI) image sensor device, includes: a substrate including a front side and a back side opposite to the front side; a radiation-sensing region disposed in the substrate; and a deep trench isolation (DTI) grid disposed in the substrate and defining the radiation-sensing region. The DTI grid extends from the back side toward the front side, and includes a segmented strip in a top view from the back side.

A device that detects single optical and radiation events and that provides improved blue detection efficiency and lower dark currents than prior silicon SSPM devices. The sensing element of the devices is a photodiode that may be used to provide single photon detection through the process of generating a self-sustained avalanche. The type of diode is called a Geiger photodiode or signal photon-counting avalanche diode. A CMOS photodiode can be fabricated using a “buried” doping layer for the P-N junction, where the high doping concentration and P-N junction is deep beneath the surface, and the doping concentration at the surface of the diode may be low. The use of a buried layer with a high doping concentration compared to the near surface layer of the primary P-N junction allows for the electric field of the depletion region to extend up near the surface of the diode. With a low doping concentration through the bulk of the diode, the induced bulk defects are limited, which may reduce the dark current. The resulting structure provides a diode with improved quantum efficiency and dark current.