A semiconductor photomultiplier includes a microcell, a photosensitive diode, and an anti-reflective coating. The microcell has an insulating layer formed over an active region. The photosensitive diode is formed in the active region beneath the insulating layer. The anti-reflective coating is provided on the insulating layer.

The present invention relates to a cyanoaryl substituted compound of formula (I), (I) wherein m is 0-4; R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are selected from hydrogen, chlorine, bromine and C.sub.6-C.sub.24-aryl, which carries one to three cyano; each R.sup.1 independently from each other is selected from bromine, chlorine, cyano, —NRaRb, C.sub.1-C.sub.24-alkyl, C.sub.1-C.sub.24-haloalkyl, C1-C24-alkoxy, C.sub.1-C.sub.24-haloalkoxy, C.sub.3-C.sub.24-cycloalkyl, heterocycloalkyl, heteroaryl, C.sub.6-C.sub.24-aryl, C.sub.6-C.sub.24-aryloxy, C.sub.6-C.sub.24-aryl-C.sub.1-C.sub.10-alkylene, etc., with the proviso that at least one of the radicals R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 is C.sub.6-C.sub.24-aryl, which carries one to three cyano; X is O, S, SO or SO.sub.2; A is a diradical of the formulae (A.1), (A.2), (A.3), or (A.4) wherein *, R.sup.6, (R.sup.7)n, (R.sup.8)o and (R.sup.9)p are as defined in the claims and in the description. The invention also relates to the use of said compound(s) in color converters, to said color converters and their use, to lighting devices, to a backlight unit for liquid crystal displays; a liquid crystal display device and a self-emissive display device comprising at least one compound (I). ##STR00001##

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.

Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

According to one embodiment, a semiconductor device includes a first complementary semiconductor device provided on a semiconductor substrate, and including a CMOS circuit, a metal electrode provided above the first complementary semiconductor device, a semiconductor layer provided above the metal electrode, including an nMOS region and a pMOS region separated from each other, and containing Ge; and a second complementary semiconductor device including an nMOSFET provided on the first portion of the semiconductor layer and a pMOSFET provided on the second portion of the semiconductor layer.

A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI.sub.2 compound layer and a group I.sub.2-II-IV-VI.sub.4 compound layer. The intermediate layer has an n.sup.+-type Si sublayer and at least one selected from a p.sup.+-type Si sublayer, a metal compound sublayer, and a graphene sublayer. The metal compound sublayer is represented by MX where M denotes at least one type of element selected from Nb, Mo, Pd, Ta, W, and Pt and X denotes at least one type of element selected from S, Se, and Te.

Disclosed are a solar cell and a method of fabricating the same. The solar cell includes a support substrate, a back electrode layer on the support substrate, a light absorbing layer on the back electrode layer, and a front electrode layer on the light absorbing layer. The back electrode layer includes at least three layers. The method includes forming a first layer on a support substrate, forming a second layer on the first layer, forming a third layer on the second layer, forming a light absorbing layer on the third layer, and forming a front electrode layer on the light absorbing layer.

In an embodiment, a solar energy system includes multiple photovoltaic modules, each oriented substantially at a same angle relative to horizontal. The angle is independent of a latitude of an installation site of the solar energy system and is greater than or equal to 15 degrees. The solar energy system defines a continuous area within a perimeter of the solar energy system. The solar energy system is configured to capture at the photovoltaic modules substantially all light incoming towards the continuous area over an entire season.

A photoelectric conversion element includes a ferroelectric layer; a first electrode and a second electrode provided on a surface or a surface layer portion of the ferroelectric layer; a common electrode provided on a surface or a surface layer portion of an opposite side to a side of the ferroelectric layer on which the first electrode and the second electrode are provided; and a pair of lead-out electrodes extracting electric power from the ferroelectric layer, in which the first electrode and the second electrode are arranged alternately in a predetermined direction.