In a general aspect, a method for growing an InGaN optoelectronic in a reaction chamber, by MOCVD, includes controlling a surface temperature of a wafer to be at least 750° C. during growth of a light-emitting layer. The light emitting layer includes an InGaN quantum well layer having an In % of greater than 25%. The method further includes providing an indium-containing metalorganic precursor and a gallium-containing metalorganic precursor into the reaction chamber and to the wafer during growth of the light-emitting layer when the surface temperature of the wafer is greater than 750° C. The method also includes providing an N-containing species to the wafer at a rate such that a partial pressure of the N-containing species at the surface of the wafer is greater than 1.5 atmospheres during growth of the light-emitting layer of the optoelectronic device when the surface temperature of the wafer is greater than 750° C.

A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Example implementations include a method of mass transfer of display elements, by depositing one or more resist layers between one or more display elements disposed on a photoemitting layer, depositing at least one stress buffer layer between the resist layers, removing the resist layer and at least a portion of the photoemitting layer disposed in contact with the resist layers to form resist layer gaps on a wafer substrate, dicing the wafer substrate at the resist layer gaps to form at least one wafer die, separating the wafer substrate from the display elements by irradiation at corresponding first surfaces of the display elements, removing the stress buffer layers from the wafer die, and bonding the portion of the display elements to a first handler substrate at one or more electrode pads of the portion of the display elements.

A semiconductor light-emitting element supply device according to an embodiment of the present invention supplies semiconductor light-emitting elements in a fluid chamber in which self-assembly occurs, the semdconductor light-emitting element supply device comprising: a tray disposed in the fluid chamber; a transfer unit which includes a magnet and a magnet accommodating part for accommodating the magnet and which transfers the semiconductor light-emitting elements by using magnetic force; a supply unit disposed above the tray to supply the transferred semiconductor light-emitting elements to the tray; and a control unit for controlling operations of the tray, the transfer unit and the supply unit, wherein the control unit controls the position of the magnet accommodated in the magnet accommodating part so that the semiconductor light-emitting elements are adhered on one surface of the magnet accommodating part or the adhered semiconductor light-emittng elements are separated from the one surface of the magnet accommodating part.

A method of fabricating and transferring high quality and manufacturable light-emitting devices, such as micro-sized light-emitting diodes (μLEDs), edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), using epitaxial later over-growth (ELO) and isolation methods. III-nitride semiconductor layers are grown on a host substrate using a growth restrict mask, and the III-nitride semiconductor layers on wings of the ELO are then made into the light-emitting devices. The devices are isolated from the host substrate to a thickness equivalent to the growth restrict mask and then transferred or lifted from of the host substrate. Back-end processing of the devices is then performed, such as attaching distributed Bragg reflector (DBR) mirrors, forming cladding layers, and/or adding heatsinks.

In an embodiment an optoelectronic device includes a carrier and a plurality of semiconductor chips fastened on the carrier by a connector, wherein each semiconductor chip has at least one contact pad on a main surface facing away from the carrier, wherein each contact pad is contacted electrically by an interconnecting track, and wherein the interconnecting track is guided over an edge of the main surface of the semiconductor chip onto the carrier.

The present application provides a method of manufacturing a semiconductor structure. Due to different hole ratios of openings of a mask corresponding to one unit region of a substrate, flow rates of reactive gas in openings are different when growing a light emitting layer. In this way, growth rates of the light emitting layers in openings are different, and doping efficiencies of the light emitting layers in openings are different, such that composition proportions of respective elements in the grown light emitting layer are different, and the light emitting wavelengths of LEDs are different. The processes are simple, and a semiconductor structure applied to a full-color LED can be manufactured on one substrate, which can reduce a size of the full-color LED.

A light-emitting structure includes an n-type layer, an active layer, and a p-type layer. The active layer has N quantum well structure periods, each of the N quantum-well structure periods has a well layer and at least one barrier layer. The N quantum-well structure periods include a first light-emitting section and a second light-emitting section. The first light-emitting section is closer to the n-type layer than the second light-emitting section. A method for producing the light-emitting structure, and a light-emitting device that has the light-emitting structure are also disclosed.

A semiconductor light-emitting device includes a light-transmissible substrate, and a semiconductor light-emitting stack. The light-transmissible substrate is made of a first material, and has a first surface and a second surface opposite to the first surface. The first surface has a first region, and a second region which is formed with a plurality of protruding portions and a plurality of recessed portions formed therebetween. The recessed portions are disposed at a level lower than that of the first region relative to the second surface. The semiconductor light-emitting stack is disposed on the first region of the first surface along a stacking direction.

Related are a transfer member, a preparation method thereof and a transfer head having the same. The preparation method thereof includes the following operations: an inorganic substrate is provided, and a material for forming the inorganic substrate is selected from any one or more of a silicon-containing inorganic material, an III-V group compound semiconductor material, an II-VI group compound semiconductor material, and a metal material, herein, the hardness of metal is less than that of sapphire; a dry etching process is used to form a first microstructure on the surface of the inorganic substrate, to obtain a patterned substrate; an elastic glue layer is formed on a patterned surface of the patterned substrate, and the elastic glue layer has a second microstructure complementary to the first microstructure; the patterned substrate is removed, to obtain the transfer member.