A multi-color LED display comprises pixels, each comprising a first sub-pixel, a second sub-pixel, and a third sub-pixel. The first sub-pixel comprises a first light-emitting diode (LED) that emits a first color of light, the second sub-pixel comprises second LEDs that emit a second color of light different from the first color of light, and the third sub-pixel comprises third LEDs that emit a third color of light different from the first color of light and different from the second color of light. The second LEDs are electrically connected in parallel and the third LEDs are electrically connected in series.

A display apparatus includes a substrate defining an opening area and including a display area and an intermediate area between the opening area and the display area; an inorganic insulating layer in the display area and the intermediate area; a pixel circuit in the display area; an organic insulating layer on the pixel circuit; a pixel electrode on the organic insulating layer, an intermediate layer on the pixel electrode, and an opposite electrode on the intermediate layer; a thin-film encapsulation layer on the opposite electrode and comprising a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first and second inorganic encapsulation layer; and a partition wall on the organic insulating layer and including at least two dams, wherein the inorganic insulating layer is in contact with the thin-film encapsulation layer in an area between the partition wall and the opening area.

Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.

The display panel includes: a substrate; a pixel defining layer, arranged on the substrate, and comprising a plurality of opening regions arranged in an array; a light-emitting layer, configured to cover at least the plurality of opening regions; and an interval layer, arranged on the pixel defining layer and disconnected from an adjacent light-emitting layer.

A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.

A light-emitting device includes: a first layer; a second layer; a light-emitting element layer positioned between the first layer and the second layer and including a light-emitting element; a first adhesive layer positioned between the first layer and the light-emitting element layer, and having a thickness of 10 μm or greater and less than 25 μm and a shear modulus at 23 degrees Celsius of 4.0E+04 Pa or greater and less than 1.0E+05 Pa; and a second adhesive layer positioned between the light-emitting element layer and the second layer, and having a thickness of greater than 0 μm and no greater than 15 μm and a shear modulus at 23 degrees Celsius of 1.0E+05 Pa or greater.

A repairing component including a micro-LED chip including an electrode and having an electrode plane on which the electrode is disposed, and an anisotropic conductive layer disposed to be in contact with the electrode disposed on the electrode plane of the micro-LED chip, where the anisotropic conductive layer has an area matching with an area of the electrode plane.

A method of manufacturing an electronic component including a substrate is provided. The method includes generating a plasma remote from a sputter target, generating sputtered material from the sputter target using the plasma, and depositing the sputtered material on a substrate as a crystalline layer.

A display panel and a preparation method thereof are disclosed in the present disclosure. The display panel includes an anode layer and a light-emitting layer. The anode layer includes a first anode and a second anode. There is a gap between the first anode and the second anode. The first anode includes a first reflection portion, and the second anode includes a second reflection portion. A reflectivity of the first reflection portion is less than a reflectivity of the second reflection portion. The light-emitting layer includes a green light emitting portion and a blue light emitting portion that are correspondingly disposed on the first anode and the second anode respectively.

A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator that oscillates a laser, a Y-axis scanner that executes a high-speed scan with a laser beam emitted from the laser oscillator in a Y-axis direction, an X-axis scanner that executes processing feed of the laser beam emitted from the laser oscillator in an X-axis direction, and a beam condenser. The Y-axis scanner is selected from any of an AOD, a resonant scanner, and a polygon scanner and the X-axis scanner is selected from a galvano scanner and a resonant scanner.