A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

The present disclosure provides an apparatus for generating fiber delivered laser-induced white light. The apparatus includes a package case enclosing a board member with an electrical connector through a cover member and a laser module configured to the board member inside the package case. The laser module comprises a support member, at least one laser diode device configured to emit a laser light of a first wavelength, a set of optics to guide the laser light towards an output port. Additionally, the apparatus includes a fiber assembly configured to receive the laser light from the output port for further delivering to a light head member disposed in a remote destination. A phosphor material disposed in the light head member receives the laser light exited from the fiber assembly to induce a phosphor emission of a second wavelength for producing a white light emission substantially reflected therefrom for various applications.

A light source unit includes: a sealed semiconductor laser package including a laser diode that includes an emitter region from which laser light is emitted, the emitter region located at a surface of the laser diode, and a window member configured to transmit the laser light; a first lens structure configured to receive the laser light transmitted through the window member and create an image of the emitter region on an image plane; and a second lens structure configured to convert the laser light having passed through the image plane into a collimated or converged beam, and to emit the collimated or converged beam.

An injection locking laser source is provided for an optical communications system. The injection locking laser source includes a laser cavity configured to receive an externally injected low linewidth primary light source. The laser cavity includes a cavity length, a cavity facet reflectivity, and a cavity quality factor. The injection locking laser source further includes an emitting region configured to output a secondary light source injection locked to the externally injected low linewidth primary light source at a stable detuning frequency based on a photon number, a steady-state phase, and a carrier number of the primary light source injected into the cavity.

A first calculation unit calculates an acceleration factor of lifetime consumption of the light source with as case of a standard temperature and standard drive condition as a reference, a second calculation unit calculates a whole lifetime or remaining lifetime of individual light sources relative to a performance index of the individual light sources or a change rate of the performance index, a computation unit obtains an effective cumulative driving time at which the magnitude of influence imparted on the lifetime is equivalent with a case of driving at the standard temperature and standard drive condition, by calculating a time integral of the acceleration factor, and a recording unit records the effective cumulative driving time and the whole lifetime or remaining lifetime together with an optical output characteristic of the light source.

A light emitting device includes a base, a lid portion, a plurality of semiconductor laser elements, and a collimate lens. The lid portion is fixed to the base to define a hermetically sealed space by the lid portion and the base. The semiconductor laser elements are provided in the hermetically sealed space. The collimate lens has a non-lens portion fixed to the lid portion, and a plurality of lens portions connected and aligned along one direction and surrounded by the non-lens portion when viewed from a light extracting surface side of the collimate lens.

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

A light emitting device includes a plurality of semiconductor laser elements, a frame part, a light-reflective member, a plurality of wires, and first and second protective elements. The frame part has a pair of first inner lateral surfaces and a second inner surface. The light-reflective member is configured to reflect laser light traveling from at least one of the plurality of semiconductor laser elements toward one of the first inner lateral surfaces of the frame part. The wires electrically connect the semiconductor laser elements respectively to an upper surface of the frame part. The first and second protective elements are disposed on the upper surface of the frame part in an area of the upper surface along the second inner surface. At least one of the wires is bonded on an area of the upper surface between the first and second protective elements.

Provided is a light emitting device including a light source that emits primary light; and a wavelength converter that includes a first phosphor that absorbs the primary light and emits first wavelength-converted light, wherein the light emitting device emits output light including the first wavelength-converted light, the first wavelength-converted light is near-infrared light having a fluorescence intensity maximum value within a wavelength range of 700 nm or more and less than 800 nm, the first wavelength-converted light mainly contains a broad fluorescent component based on an electron energy transition of .sup.4T.sub.2.fwdarw..sup.4A.sub.2 of Cr.sup.3+, and the broad fluorescent component has a fluorescence spectrum half-width that is less than 100 nm.

Provided herein is a semiconductor package and method of forming the same. The semiconductor package has a cap including a first window wafer with a first face and opposing second face, a second window wafer, and a perforated spacer wafer with through-holes extending therethrough. The first and second faces of the first window wafer are mutually parallel and at least one face includes an antireflective surface. The spacer wafer is disposed between the first and second window wafers with the first and second window wafers bonded to opposing faces of the spacer wafer. The window wafers and spacer wafer together define a cavity in the cap. An edge-emitting laser diode is disposed on a submount and configured to direct a laser beam at normal incidence to the first face of the first window wafer. The cap is mounted on the submount with the edge-emitting laser diode enclosed in the cavity.