An embodiment semiconductor optical device includes an optical waveguide including a core, and an active layer extending in the waveguide direction of the optical waveguide for a predetermined distance and arranged in a state in which the active layer can be optically coupled to the core. The core and the active layer are arranged in contact with each other. The core is formed of a material with a refractive index of about 1.5 to 2.2, such as SiN, for example. In addition, the core is formed to a thickness at which a higher-order mode appears. The higher-order mode is an E.sub.12 mode, for example.

A laser light source is provided including an airtight container. A first resonance mirror and a second resonance mirror are disposed outside the airtight container. The first resonance mirror includes a lens unit and a reflection coating layer. The lens unit includes a first surface and a second surface, and the first surface is inclined with respect to the second surface.

Laser Side Mode Suppression Ratio (SMSR) control is provided via a logic controller configured to measure an SMSR of a carrier wave upstream of a modulator and measure an Average Optical Power (AOP) of the carrier wave downstream of the modulator; transmit a bias voltage based on the SMSR and the AOP to a laser driver for a laser generating the carrier wave; and transmit an attenuation level based on the SMSR and the AOP to a Variable Optical Attenuator (VOA) upstream of the modulator. In various embodiments the attenuation level and bias voltage can rise or fall together, or one may rise and one may fall to ensure the output optical signal meets specified SMSR and AOP values.

A laser source is presented a plurality of unit cells of a selected number of partially physically coupled lasing units arranged within a plane and configured to form a topological structure, wherein each of the lasing units is configured to emit radiation component substantially perpendicular to said plane, said plurality of the unit cells comprising at least a first sub-array of the unit cells located in a first region interfacing with a second region of a different type than said first region, thereby defining an arrangement of optically coupled lasing units along an interface region between the first and second adjacent regions, forming at least one topological state along a topological path within said interface region.

A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

A lead pin (2a,2b) penetrates a metal stem (1). A support block (3) is mounted on the metal stem (1). A dielectric substrate (4) is mounted on a side surface of the support block (3). A signal line (5a,5b) is formed on the dielectric substrate (4). One end of the signal line (5a,5b) is connected to the lead pin (2a,2b). A semiconductor optical modulation device (6) is mounted on the dielectric substrate (4). A conductive wire (8a,8b) connects the other end of the signal line (5a,5b) and the semiconductor optical modulation device (6). The semiconductor optical modulation device (6) includes a plurality of optical modulators (6b,6c) separated from each other.

A device for the generation of ultrashort pulses, wherein an oscillator is formed by: a first and a second non-overlapping transmission band-pass filter, which can serve as reflecting end element of the oscillator; optically transparent means with non-linear Kerr coefficient χ.sup.(3) different from zero configured to achieve a spectral broadening by self-phase modulation of the signal transiting through these means; an optical waveguide that produces a positive gain; a node configured to receive a trigger signal designed to activate the operation of the oscillator; a trigger signal generating device comprising: a laser source, for example a microchip, configured to generate a laser pulse, preferably with a minimum bandwidth, having a duration of hundreds of ps, up to the ns; a coupling system designed to introduce the pulse of the trigger laser into a waveguide made of an optically transparent material characterised by a non-linear Kerr coefficient χ.sup.(3) different from zero, which is configured to produce two distinct effects in order to spectrally broaden the pulse of the trigger laser, and precisely: a) self-phase modulation four-wave mixing; the output of the waveguide supplies the trigger signal to the node. The pulses produced by the oscillator typically have a duration of the order of the picosecond and are easily reduced to the Fourier limit of circa 100 femtoseconds by means of a dispersive device.

Provided are a lens, a stem, an LD chip to emit laser light with a beam center directed along a mounting surface of the stem, and a PD chip having a reflective surface formed with a dielectric multilayer film on its surface, reflecting the laser light emitted from the LD chip toward the lens, and measuring an amount of the laser light, wherein the LD chip is provided with a waveguide portion having a tip portion that is formed on a side of a front end face and has a width of 0.5 to 0.7 μm, and having a tapered portion that is connected to the tip portion and becomes narrower toward the tip portion at a gradient of 0.018 to 0.033.

A testing device may include a stage associated with holding an emitter wafer during testing of an emitter. The stage may be arranged such that light emitted by the emitter passes through the stage. The testing device may include a heat sink arranged such that the light emitted by the emitter during the testing is emitted in a direction away from the heat sink, and such that a first surface of the heat sink is near a surface of the emitter wafer during the testing but does not contact the surface of the emitter wafer. The testing device may include a probe card, associated with performing the testing of the emitter, that is arranged over a second surface of the heat sink such that, during the testing of the emitter, a probe of the probe card contacts a probe pad for the emitter through an opening in the heat sink.

An optical member includes: a conversion member including a fluorescent material; a light reflecting ceramic holding the conversion member, the conversion member and the light reflecting ceramic having a continuous surface; a light-transmissive film on the continuous surface; and a wiring on the light-transmissive film.