Provided is a load drive slope control device that can reduce EMI noise, and power loss and heat generation when a drive transistor is turned on and off, and can prevent excessive high temperature-induced damage to the drive transistor at an excessive high temperature. Disclosed is a load drive control device including: a drive transistor that drives a load; a pre-driver that drives the drive transistor via an ON/OFF control terminal of the drive transistor; a capacitor that is connected to an input side of the pre-driver, a first current source that is ON/OFF controlled by a first signal, and generates current which is charged to the capacitor; and a second current source that is ON/OFF controlled by a second signal, and generates current for discharging the capacitor, in which an output voltage from the pre-driver is changed by charging or discharging the capacitor, the drive transistor is turned on and off by the output voltage from the pre-driver, and a linear ascending gradient and a linear descending gradient of the waveform of a voltage driving the load are obtained by turning on and off the drive transistor.

A transistor device may include an n-type transistor. The transistor device may further include a first bias voltage unit, which is electrically connected to the n-type transistor and configured to apply a first positive bias voltage to a drain terminal of the n-type transistor when the n-type transistor is in an off state. The transistor device may further include a second bias voltage unit electrically, which is connected to the n-type transistor and configured to apply a second positive bias voltage to a source terminal of the n-type transistor when the n-type transistor is in the off state.

An output circuit has: a first driver circuit configured to receive a voltage of an input terminal and output a first voltage to an output terminal; a first comparison circuit configured to compare a first reference voltage with a voltage of the output terminal; a second driver circuit configured to receive the voltage of the input terminal and output a second voltage to the output terminal and become an off state according to a comparison result of the first comparison circuit; a second comparison circuit configured to compare a second reference voltage different from the first reference voltage with the voltage of the output terminal; and a third driver circuit configured to receive the voltage of the input terminal and output a third voltage to the output terminal and become an off state according to a comparison result of the second comparison circuit.

Push-pull half-bridge magnetoresistive switch, comprising two magnetic sensor chips, each magnetic sensor chip having a magnetic induction resistor and a magnetic induction resistor electrical connection pad. The two magnetic sensor chips are electrically interconnected and have opposite and parallel directions of induction, thus forming the push-pull half-bridge circuit. The magnetic induction resistor comprises one or a plurality of magnetoresistive elements connected in series. The magnetic induction resistor pads are located at adjacent edges of the magnetic sensor chips, and each pad may accommodate the welding of at least two bonding wires. The magnetoresistive switch may improve the sensitivity of a sensor, and decrease output voltage deviation and output voltage temperature drift, which is beneficial for decreasing the volume and increasing the performance of the switch sensor.

A skyrmion driving method that utilizes electric current to make it possible to perform driving ON-OFF control at high speed and to suppress the influence of an inertial effect so that the driving control can be performed further logically. The skyrmion is driven based on a driving amount proportional to a time-integrated value of an electric current density j(t) (Am.sup.−2) at a clock time t for a location R(t) of the skyrmion at the clock time t and on a driving amount that is in accordance with a diffusive motion due to thermal fluctuation and increases as a Gilbert attenuation constant increases.

A hybrid switch apparatus includes a gate drive circuit producing a gate drive signal, a GaN high electron mobility transistor (HEMT) having a first gate, a first drain, and a first source. A silicon (Si) MOSFET has a second gate, a second drain, and a second source. The GaN HEMT and the Si MOSFET are connected in a parallel arrangement so that (i) the first drain and the second drain are electrically connected and (ii) the first source and the second source are electrically connected. The second gate is connected to the gate drive circuit output to receive the gate drive signal. A delay block has an input connected to the gate drive circuit output and an delay block output is configured to produce a delayed gate drive signal for driving the GaN HEMT.

A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.

A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

A device (1) for electromagnetic treatment of fuels by means of an electromagnetic field comprises at least a resonance oscillator module (D, E, F) for generating an electric alternating field, a supply module (B) for supplying an alternating voltage to the at least one resonance oscillator module (D, E, F). The resonance oscillator module (D, E, F) comprises a plurality of oscillating circuits mutually connected, with a plurality of coils (6) and a plurality of capacitors (3, 4). Each coil (6) is formed of precisely one closed winding and each capacitor (3, 4) is connected to two coils (6) in such a way that connection points of the capacitors (3, 4) are distributed along the closed winding and are spaced from one another. Each coil (6) is connected in such a way to at least a further coil (6) that the connected coils (6) have no common capacitor connection.

The semiconductor device includes a first drive control signal generator suitable for generating a first drive control signal from a test input signal, a first output driver suitable for being controlled according to the first drive control signal, a second drive control signal generator suitable for generating a second drive control signal from the first drive control signal, and a second output driver suitable for being controlled according to the second drive control signal.