Circuits and methods for transmitting high-voltage (HV) static and/or switching signals via a high-voltage (HV) transmission gate controllable via low-voltage (LV) logic are presented. The HV gate includes a biasing circuit for generating a biasing voltage to gates of two series-connected HV transistors. According to one aspect, the biasing voltage is generated through a pull-up device coupled to a HV supply having a voltage level higher than a high voltage of a signal to be transmitted. According to another aspect, the biasing voltage is generated through a LV supply coupled to a diode, and a capacitor coupled between the gates and the sources of the HV transistors. When the gate is activated, the combination of the LV supply coupled to the diode and the capacitor generates a biasing voltage based on a sum of a voltage of the LV supply and an instantaneous voltage level of the signal being transmitted.

A superconducting coupling device includes a resonator structure. The resonator structure has a first end configured to be coupled to a first device and a second end configured to be coupled to a second device. A gate is positioned proximal to a portion of the resonator structure. The gate is configured to receive a gate voltage and vary a kinetic inductance of the portion of the resonator based upon the gate voltage. The varying of the kinetic inductance induces the resonator structure to vary a strength of coupling between the first superconducting device and the second superconducting device.

A transistor diagnostic circuit includes a protection transistor output terminal, a fault terminal, and circuitry coupled to the protection transistor output terminal and the fault terminal. The protection transistor output terminal is adapted to be coupled to a current terminal of a protection transistor. The transistor diagnostic circuit is configured to, at start-up, load the protection transistor output terminal to test the protection transistor, and to generate a fault signal at the fault terminal responsive to a voltage on the protection transistor output terminal exceeding a threshold.

An adaptive anti-aging sensor based on a cuckoo algorithm, comprising a control module, a reference voltage-controlled oscillator, two shaping circuits, a frequency difference circuit, a resolution adjustment circuit, a 16-bit counter, a parallel-to-serial circuit, an adaptive module, and a digital-to-analog converter. A lookup table is prestored in the adaptive module; when aging monitoring is performed on a voltage-controlled oscillator in an integrated circuit, the adaptive module uses the cuckoo algorithm to determines the optimal working voltage of the currently monitored voltage-controlled oscillator, and the control module accordingly changes the input voltage of the voltage-controlled oscillator of the integrated circuit. The present invention has the advantages that the degree of aging of the integrated circuit is reflected by monitoring the degree of aging of the voltage-controlled oscillator in the integrated circuit, and the optimal working voltage of the voltage-controlled oscillator in the integrated circuit is adaptively adjusted.

In an embodiment an isolated gate driver device includes a low-voltage section having a control input configured to receive a PWM control signal with a switching frequency from a control stage, a high-voltage section, galvanically isolated from the low-voltage section the high-voltage section including a driving output configured to provide a gate-driving signal as a function of the PWM control signal to a power stage having at least one switch, a feedback input configured to receive at least one feedback signal indicative of an operation of the power stag, and an ADC module configured to convert the feedback signal into a digital data stream and a conversion-control module coupled to the ADC module and configured to provide a conversion-trigger signal designed to determine a start of a conversion for acquiring a new sample of the feedback signal.

A method for checking a fault status of a mobile utility unit by a maintenance station includes generating via control electronics status data representing a fault status of the mobile utility unit, storing the status data as fault data in a fault memory via the control electronics, classifying via a data processing unit the fault data under different fault classes to identify an applicable fault class, and initiating via the data processing unit a procedural measure for the mobile utility unit according to the identified fault class.

The present invention relates to a new type of current driving circuit, which has high linearity during low current driving, comprising: a voltage-current conversion unit for converting an input voltage into a current; a digital analog converter (DAC) connected to an output terminal of the voltage-current conversion unit and for generating and outputting a voltage corresponding to an applied digital code; a field effect transistor having a first electrode connected to a load and a second electrode connected to a node connected to a resistor, and for allowing a current to flow to the load in response to a voltage applied to a gate; an amplifier for receiving the voltage output from the digital analog converter and a voltage generated by the resistor, generating a voltage for controlling such that a current flows from the field effect transistor, and applying same to the gate; a current supply source for supplying to the first electrode a current required for operating the field effect transistor in a saturation region; and a control unit for controlling the field effect transistor to operate in the saturation region, by activating the current supply source, if the field effect transistor operates in a region lower than a threshold voltage.

A circuit includes: a first swing reduction circuit coupled between an input/output pad and a buffer circuit, and a second swing reduction circuit coupled between the input/output pad and the buffer circuit. The first swing reduction circuit comprises a first transistor gated by a first bias voltage and comprises a second transistor drained by the first bias voltage. The first swing reduction circuit is configured to increase a voltage at a first node in the buffer circuit when a voltage applied on the input/output pad is equal to a first supply voltage. The second swing reduction circuit is configured to reduce a voltage at a second node in the buffer circuit when the voltage applied on the input/output pad is equal to a second supply voltage.

A current sense circuit includes channels a detection terminal, a feedback circuit and third-type switches. The channels respectively have first-type switches and second-type switches. Each of the first-type switches supplies an electric power to a load when the first-type switch is turned on. The second-type switches are respectively connected to the first-type switches in parallel, and respectively detect currents flowing through the first-type switches. The detection terminal is connected to the second-type switches. The feedback circuit includes a single operational amplifier having a first input terminal and a second input terminal. The first input terminal is connected to respective electrodes of the first-type switches close to the load. The second input terminal is connected to respective electrodes of the second-type switches close to the detection terminal. The third-type switches are connected to the electrodes of the first-type switches and the first input terminal.

Techniques are described for implementing diodes with low threshold voltages and high breakdown voltages. Some embodiments further implement diode devices with programmable threshold voltages. For example, embodiments can couples a native device with one or more low-threshold, diode-connected devices. The coupling is such that the low-threshold device provides a low threshold voltage while being protected from breakdown by the native device, effectively manifesting as a high breakdown voltage. Some implementations include selectable branches by which the native device is programmably coupled with any of multiple low-threshold, diode-connected devices.