Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

A flexible ion generator device that includes a dielectric layer having a first end, a second end, a first side, a second side, a top side, and a bottom side, at least one trace positioned on the dielectric layer and having a plurality of emitters engaged to the at least one trace. A plurality of lights disposed on the dielectric layer.

The disclosure provides a plasma source and an excitation system for excitation of a plasma, and an optical monitoring system. In one embodiment the plasma source includes: (1) a coaxial resonant cavity body having an inner length, and including a first end, a second end, an inner electrode and an outer electrode, (2) a radio frequency signal interface electrically coupled to the inner and outer electrodes at a fixed position along the inner length and configured to provide a radio frequency signal to the coaxial resonant cavity body, (3) a window positioned at the first end of the coaxial resonant cavity body, and (4) a mounting flange positioned proximate the window at the first end of the coaxial resonant cavity body and defining a plasma cavity, wherein the window forms one side of the plasma cavity and isolates the coaxial resonant cavity body from plasma in the plasma cavity.

The present invention relates to a method for measuring the ion nonextensive parameter of plasma includes the following steps: describe the plasma with nonextensive statistical mechanics, obtain the equation describing the relationship between the geodesic acoustic mode frequency and the ion acoustic speed of plasma; collect the measurement data of the geodesic acoustic mode frequencies and plasma temperature in the device where the plasma is to be measured; the obtained equation describing the relationship between the geodesic acoustic mode frequency and the ion acoustic speed of plasma is used to linearly fit the collected measured data of the geodesic acoustic mode frequency and the plasma temperature in the device where the plasma is to be measured to obtain the slope value; based on the derived equation and the obtained slope values, and combining with the safety factor of the device where the plasma is to be measured, the ion nonextensive parameter is solved numerically. The present invention fills the gap where the electron nonextensive parameter can be measured with the nonextensive single electric probe, but the corresponding ion nonextensive parameter cannot be diagnosed yet in the field of nonextensive parameters diagnosis.

Vacuum plasma gun and method of controlling plasma arc in a vacuum plasma gun. Vacuum plasma gun includes a rear gun body section having an electrode, and a cascade section configured to connect to the rear gun body section. The cascade section includes a plurality of neutrodes arranged to form a neutrode stack. The method includes connecting a cascade neutrode stack to a rear body section of a vacuum plasma gun.

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

A plasma interaction simulator is presented. The simulator magnetically induces multiple distinct flows of plasma within a physical plasma vessel. The plasma flows collide with each other at flow interaction boundaries where discontinuities arising due to differences between the flows give rise to interactions. Sensors can be incorporated into the plasma simulator to observe and collect data about the plasma flow interactions.

A plasma power generator wherein a plasma is generated by subjecting oxygen (O2) to a strong electromagnetic field. The oxygen plasma enters a chamber and is combined with free electrons from an electron-donation element thereby producing heat.

A method of characterizing a Plasma Processing Reactor (PPR) by measuring the electromagnetic (EM) emissions of a plasma inside the PPR using an Optical Plasma Monitoring Apparatus (OPMA) is described. The OPMA contains a plurality of photo-sensors that can measure EM emissions of narrow and/or broad spectral regions at various selected positions on the OPMA, and record them as a function of time. The OPMA can have substantially similar dimensions of a workpiece to facilitate loading and unloading into the PPR.

Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.