[Object] To provide a thermoelectric body that can be deposited on any substrate, which is not limited to a single crystal bulk material or an epitaxially grown thin film, and is capable of exhibiting high coercive force and residual magnetization with respect to in-plane magnetization.

[Solving Means] A thermoelectric body that is a magnetic film for use in a thermoelectric generation element utilizing an anomalous Nernst effect, characterized by having an easy axis of magnetization in an in-plane direction and an amorphous structure. Favorably, the thermoelectric body is characterized in that Sm.sub.pCo.sub.100-p (0<p?50) or Sm.sub.p(Fe.sub.qCo.sub.100-q).sub.100-p (0<p?50, 0?q?100) is included.

A superconducting thermal detector (bolometer) of THz (sub-millimeter) wave radiation based on sensing the change in the amplitude or phase of a resonator circuit, consisting of a capacitor (Csh) and a superconducting temperature dependent inductor where the said inductor is thermally isolated from the heat bath (chip substrate) by micro-suspensions. The bolometer design includes a thin film inductor located on the membrane, a single or/and multi-layered thin film capacitor, and a thin film absorber of incoming radiation. The bolometer design can also include a lithographic antenna with antenna termination and/or a back reflector beneath the membrane for optimal wavelength detection by the resonance circuit. The superconducting thermal detector (bolometer) and arrays of these detectors operate in a temperature range from 1 Kelvin to 10 Kelvin.

According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, a first member, and a second member. The first member includes a first crystal and is provided between the first conductive layer and the second conductive layer. The first crystal has a wurtzite structure. The second member is separated from the first member and is provided between the first member and the second conductive layer. A<000-1> direction of the first crystal has a component from the first member toward the second member.

The purpose of the present invention is to provide a thermoelectric conversion element capable of achieving high-efficiency thermoelectric conversion using comparatively inexpensive materials. The present invention is accordingly provided with: a magnetic body layer, an electromotive film for generating electromotive force, and two terminal parts formed so that each is in contact with the electromotive film at two locations having different potentials due to the electromotive force. The electromotive film is formed on the magnetic body layer, said film comprising a Ni-containing magnetic alloy. Said film is doped with a 5d transition metal element, and Ni is the matrix.

A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

Provided is a thermal type detection element that enables high sensitivity and high speed response while reducing the size of the element.

A thermoelectric conversion element 10 includes: a substrate 11; a thin film thermoelectric conversion layer 12 that is stacked on the substrate 11; a first electrode 13 on a high temperature side that is disposed on one surface of the thermoelectric conversion layer 12; a second electrode 15 on a low temperature side that is disposed on the other surface of the thermoelectric conversion layer 12; and an absorption layer 18 that is stacked in contact with the one surface of the thermoelectric conversion layer 12 and absorbs heat received from the outside. In the thermoelectric conversion element 10, the one surface is an upper surface of the thermoelectric conversion layer 12, the other surface is a lower surface of the thermoelectric conversion layer 12, the first electrode 13 is disposed at a contact surface between a lower surface of the absorption layer 18 and the upper surface of the thermoelectric conversion layer 12, and the second electrode 15 is disposed at a contact surface between the lower surface of the thermoelectric conversion layer 12 and a front surface of the substrate.

A method for forming a junction in a germanium (Ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes performing a plasma pretreatment on the substrate in the processing chamber for a predetermined pretreatment period using a pretreatment plasma gas mixture including hydrogen gas species. The method includes supplying a doping plasma gas mixture to the processing chamber including a phosphorous (P) gas species and an antimony (Sb) gas species. The method includes striking plasma in the processing chamber for a predetermined doping period. The method includes annealing the substrate during a predetermined annealing period to form the junction in the germanium (Ge) layer.

We describe a method of detecting a voltage from a spin-current, the spin-current comprising a current having a spin predominantly aligned in a spin direction, the method comprising: flowing the spin current through a layer of organic material in a vertical direction through the layer; and detecting an electric field in a lateral direction in the layer of organic material. In a preferred embodiment the organic layer is anisotropic and has a higher electrical conductivity in the lateral direction than in the vertical direction.

A thermoelectric conversion element includes: a magnetic body having a magnetization; and an electromotive body formed of material exhibiting a spin orbit coupling and jointed to the magnetic body. The magnetic body has an upper joint surface jointed to the electromotive body. The upper joint surface has concavities and convexities.

Determining a Curie temperature (Tc) distribution of a sample comprising magnetic material involves subjecting the sample to an electromagnetic field, heating the sample over a range of temperatures, generating a signal representative of a parameter of the sample that changes as a function of changing sample temperature while the sample is subjected to the electromagnetic field, and determining the Tc distribution of the sample using the generated signal and a multiplicity of predetermined parameters of the sample.