Provided herein is a thermoelectric element that includes a cold end, a hot end, and a p-type or n-type material having a length between the hot end and the cold end. The p-type or n-type material has an intrinsic Seebeck coefficient (S), an electrical resistivity (ρ), and a thermal conductivity (λ). Each of two or more of S, ρ, and λ generally increases along the length from the cold end to the hot end. The thermoelectric element may be provided in single-stage thermoelectric devices providing enhanced maximum temperature differences. The single-stage thermoelectric devices maybe combined with one another to provide multi-stage thermoelectric devices with even further enhanced maximum temperature differences.

Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

A memory device comprises multiple memory dice arranged vertically in a stack of memory dice and at least one thermoelectric die contacting the bulk silicon layer of at least one of the memory dice of the multiple memory dice. Each memory die of the multiple memory dice includes an active circuitry layer that includes memory cells of a memory array and a bulk silicon layer. The thermoelectric die is configured to one or both of reduce heat from the memory die when a current is applied to terminals of the thermoelectric die and generate a voltage at the terminals of the thermoelectric die when heat from the memory die is applied to the thermoelectric die.

On-die temperature control for semiconductor die assemblies, and associated systems and methods are disclosed. In an embodiment, a semiconductor device assembly includes first and second semiconductor dies directly bonded to each other. The semiconductor dies each includes conductive pads and resistive heating components in a dielectric layer, where the resistive heating components are located proximate to the conductive pads to supply localized thermal energy to the conductive pads in response to electric current flowing through the resistive heating components. In some embodiments, the conductive pads of the first semiconductor die are directly bonded to the conductive pads of the second semiconductor die at a first temperature less than a second temperature for the thermal expansion of the conductive pads absent the localized thermal energy generated by the resistive heating components.

Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.

The present disclosure provides a microfluidic substrate, a microfluidic chip and a manufacturing method thereof. The microfluidic substrate includes: a first substrate; a conductive layer on the first substrate; and a defining layer on a side of the conductive layer facing away from the first substrate, the defining layer defining a concave portion; wherein the conductive layer comprises a plurality of conductive patterns corresponding to the concave portion, the plurality of conductive patterns are arranged along a first direction, each conductive pattern extends along a second direction and comprises a first end and a second end, the first direction is perpendicular to the second direction, and each conductive pattern has a maximum local resistance value at the first end and the second end of the conductive pattern.

Aspects herein are directed to an apparel thermo-regulatory system that actively heats or cools a wearer. The apparel thermo-regulatory system comprises an apparel item, a dimensionally stable frame comprising at least one aperture that is affixed to an outer-facing surface of the apparel item at a predetermined location, an absorbent material applied to an exposed face of the dimensionally stable frame, and at least one thermoelectric module that is releasably positioned within the aperture of the dimensionally stable frame.

Provided is a heat flow switching element that has a larger change in thermal conductivity, has excellent thermal responsiveness, and is capable of directly detecting a temperature change. The heat flow switching element according to the present invention includes: a heat flow control element part 10 including an N-type semiconductor layer 3, an insulator layer 4 laminated on the N-type semiconductor layer, and a P-type semiconductor layer 5 laminated on the insulator layer; and thermosensitive element parts 11A and 11B joined to the heat flow control element part. In addition, the thermosensitive element parts include: a thin-film thermistor portion made of a thermistor material; and a pair of counter electrodes formed facing each other on an upper side and/or a lower side of the thin-film thermistor portion, and the thin-film thermistor portion is laminated on an upper side and/or a lower side of the heat flow control element part.

A thermotactile stimulation prosthesis includes a prosthesis extremity having a prosthesis interface configured for attachment to a human limb, and a thermoelectric actuator array coupled to the prosthesis interface and configured to establish a noninvasive thermoneural human-machine interface capable of providing sensations of temperature to the human limb.

A thermotactile stimulation prosthesis includes a prosthesis extremity having a prosthesis interface configured for attachment to a human limb, and a thermoelectric actuator array coupled to the prosthesis interface and configured to establish a noninvasive thermoneural human-machine interface capable of providing sensations of temperature to the human limb.