A system for welding an elongate element along a longitudinal direction to a component including a support element comprising a support surface, a magnetic field generating arrangement generating a predefined magnetic field, a carriage comprising contacts supporting an elongate element against movement along the surface of the component in directions perpendicular to the longitudinal direction, a superconducting element being fixedly connected to the carriage, an element cooling device for cooling the superconducting element below its transition temperature, a mover operable to linearly move the carriage, and a welding device for welding the elongate element to the component. The predefined magnetic field defines a linear path along the support surface for the superconducting element when the superconducting element has a temperature below its transition temperature.

A semiconductor structure and methods of forming the semiconductor structure include a solder bump self-aligned to a through-substrate-via, wherein the solder bump and the through-substrate-via are formed of a conductive metal material, and wherein the through-substrate-via is coupled to a buried metallization layer, which is formed of a different conductive metal material.

A semiconductor structure and methods of forming the semiconductor structure include a solder bump self-aligned to a through-substrate-via, wherein the solder bump and the through-substrate-via are formed of a conductive metal material, and wherein the through-substrate-via is coupled to a buried metallization layer, which is formed of a different conductive metal material.

A superconducting wire having improved electrical and physical properties.

A calibration method, a calibration apparatus, and a program capable of estimating a degree of signal loss of an input signal supplied to an oscillator are provided. The calibration method includes: outputting an input signal to be input to an oscillator to be calibrated that includes a resonator and performs parametric oscillation, from a signal generator connected to the resonator via a transmission path while sweeping a frequency or a power of this input signal; acquiring distribution data of an intensity of a reflection signal based on measurement of the intensity of the reflection signal from the oscillator in response to the input signal; and estimating a degree of signal loss by comparing the distribution data acquired by the measurement with the distribution data theoretically obtained in which a value of the degree of the signal loss of the transmission path is assumed.

A calibration method, a calibration apparatus, and a program capable of estimating a degree of signal loss of an input signal supplied to an oscillator are provided. The calibration method includes: outputting an input signal to be input to an oscillator to be calibrated that includes a resonator and performs parametric oscillation, from a signal generator connected to the resonator via a transmission path while sweeping a frequency or a power of this input signal; acquiring distribution data of an intensity of a reflection signal based on measurement of the intensity of the reflection signal from the oscillator in response to the input signal; and estimating a degree of signal loss by comparing the distribution data acquired by the measurement with the distribution data theoretically obtained in which a value of the degree of the signal loss of the transmission path is assumed.

A traveling wave kinetic inductance parametric amplifier is presented. The amplifier includes a microstrip structure defining a parallel plate capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer. The first electrically conductive layer is made of superconducting material composition having desirably high kinetic inductance and being configured as a nanoscale thickness strip.

A High Temperature Superconducting (HTS) Superconducting Quantum Interference Device and methods for fabrication can include at least one bi-Superconducting Quantum Interference Device. The bi-SQUID can include an HTS substrate that can be formed with a step edge. A superconducting loop of YBCO can be deposited on the step edge to establish two Josephson Junctions. A superconducting path that bi-sects the superconducting loop path can also be deposited onto the substrate. In some embodiments, the bisecting path can cross the step edge twice, and the bisecting path can be ion milled at one of the crossing points to round the bisecting path and thereby remove the fourth Josephson Junction at the other crossing point. In still other embodiments, the bisecting path can be completely on the upper shelf (or the lower shelf), and the bisecting path can be ion damaged, ion damaged, or particle damaged, to establish the third Josephson Junction.

A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer. A seed metal layer, e.g., gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, e.g., gold, are electroplated from the stem seed pads through a stem mask. An absorber layer, e.g., gold, is deposited on the wafer, preferably e-beam evaporated. After patterning the absorbers, absorber and stem mask material is removed, e.g., in a solvent bath and critical point drying.

A light-controlled superconductor uses electrons as carriers, which includes a light source and a sealed tube, wherein the sealed tube is made of glass or plastic. The sealed tube is filled with electron gas, and the light source produces incident light, and under the irradiation of the incident light, electrons will be forced to vibrate and behave similarly to vibrating electric dipoles, and emit secondary electromagnetic waves, so that the average distance between the electrons in the sealed tube is much smaller than the wavelength of the incident light, causing the vibrating electrons to be in a near-field of each other. When the electric field intensity direction of the incident light and the electric moments of two vibrating electrons are in the same radial straight line and are in the same direction, there exists an attractive force among the vibrating electrons.