A method for forming an insoluble adduct using an acidic medium is provided. A chemical process utilizes acidic media to change the solubility behavior of metal solutes. The method can utilize Group 1 soluble alkali metals but can also be extended to any other soluble salts discussed under the solubility rules. The insoluble salts can be Group 2 alkaline earth metals or other insoluble salts. The insoluble adduct can have the designation XYZ where X is a soluble metal from a metal hydroxide or a metal oxide, Y is an insoluble metal from an insoluble metal hydroxide or an insoluble metal oxide, and Z is the acid ion from an aqueous acidic media.

The present disclosure generally relates to compositions comprising substrate-free crystalline 2D bismuthene, and the method of making and using the substrate-free crystalline 2D bismuthene.

The present disclosure generally relates to compositions comprising substrate-free crystalline 2D bismuthene, and the method of making and using the substrate-free crystalline 2D bismuthene.

A lead-based alloy containing alloying additions of bismuth, antimony, arsenic, and tin is used for the production of doped leady oxides, lead-acid battery active materials, lead-acid battery electrodes, and lead-acid batteries.

A battery comprising an acidified metal oxide (“AMO”) material, preferably in monodispersed nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface.

A battery comprising an acidified metal oxide (“AMO”) material, preferably in monodispersed nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface.

Disclosed are an alumina-based heterojunction material with abundant oxygen vacancies and a preparation method thereof. The heterojunction material is composed of alumina with abundant oxygen vacancies and bismuth-rich bismuth oxychloride. The method includes mixing aluminum nitrate nonahydrate, bismuth nitrate pentahydrate, an ammonium salt and urea, each in certain amount, under stirring to obtain a mixture B, placing the mixture B in a muffle furnace, heating the mixture B and continuing the stirring to gradually melt the mixture B to form an ionic liquid B; and subjecting the ionic liquid B to a spontaneous combustion reaction in the muffle furnace to obtain a product B, and cooling the product B to room temperature to obtain the alumina-based heterojunction material with abundant oxygen vacancies.

Disclosed are an alumina-based heterojunction material with abundant oxygen vacancies and a preparation method thereof. The heterojunction material is composed of alumina with abundant oxygen vacancies and bismuth-rich bismuth oxychloride. The method includes mixing aluminum nitrate nonahydrate, bismuth nitrate pentahydrate, an ammonium salt and urea, each in certain amount, under stirring to obtain a mixture B, placing the mixture B in a muffle furnace, heating the mixture B and continuing the stirring to gradually melt the mixture B to form an ionic liquid B; and subjecting the ionic liquid B to a spontaneous combustion reaction in the muffle furnace to obtain a product B, and cooling the product B to room temperature to obtain the alumina-based heterojunction material with abundant oxygen vacancies.

The amorphous inorganic anion exchanger of the present invention is represented by Formula (1) and has an average primary particle size observed with an electron microscope of at least 1 nm but no greater than 500 nm and an NO.sub.3 content of no greater than 1 wt % of the whole:
BiO(OH)  Formula (1).

The amorphous inorganic anion exchanger of the present invention is represented by Formula (1) and has an average primary particle size observed with an electron microscope of at least 1 nm but no greater than 500 nm and an NO.sub.3 content of no greater than 1 wt % of the whole:
BiO(OH)  Formula (1).