A compound strontium fluoroborate, nonlinear optical crystal of strontium fluoroborate, preparation method thereof; the chemical formula of the compound is SrB5O7F3, its molecular weight is 310.67, and it is prepared by solid-state reaction; the chemical formula of the crystal is SrB5O7F3, its molecular weight is 310.67, the crystal is of the orthorhombic series, the space group is Ccm21, and the crystal cell parameters are=10.016(6) Å, b=8.654(6)(4) Å, c=8.103(5) Å, Z=4, and V=702.4(8) Å3. A SrB5O7F3 nonlinear optical crystal has uses in the preparation of a harmonic light output when doubling, tripling, quadrupling, quintupling, or sextupling the frequency of a 1064-nm fundamental-frequency light outputted by a Nd:YAG laser, or the generation of a deep-ultraviolet frequency doubling light output lower than 200 nm, or in the preparation of a frequency multiplier, upper or lower frequency converter, or an optical parametric oscillator.

The invention relates to a method for growing a bulk single crystal, wherein the method comprises the steps of inserting a starting material into a crucible, melting the starting material in the crucible by heating the starting material, arranging a thermal insulation lid at a distance above a melt surface of said melt such that at least a central part of the melt surface is covered by the lid, and growing the bulk single crystal from the melt by controllably cooling the melt with the thermal insulation lid arranged above the melt surface.

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film (31) on the inner wall of a growth container (10) having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film (31) into contact with boron oxide melt containing silicon oxide to form a boron oxide film (32) containing silicon oxide on the inner wall of the growth container (10); forming raw material melt (34) above seed crystal (20) placed in and on the bottom section of the growth container (10); and solidifying the raw material melt (34) from the seed crystal (20) side to grow a semiconductor single crystal.

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film (31) on the inner wall of a growth container (10) having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film (31) into contact with boron oxide melt containing silicon oxide to form a boron oxide film (32) containing silicon oxide on the inner wall of the growth container (10); forming raw material melt (34) above seed crystal (20) placed in and on the bottom section of the growth container (10); and solidifying the raw material melt (34) from the seed crystal (20) side to grow a semiconductor single crystal.

A production apparatus for a metal oxide single crystal according to the present invention includes a crucible for housing a crystal raw material and a seed crystal, which has a first end and a second end, and in which the crystal raw material is disposed on a first end side, and the seed crystal is disposed on a second end side, a heater that heats the crucible, and a cooling rod, which has a third end and a fourth end, and in which the third end is provided in contact with or in proximity to the second end of the crucible so as to cool the second end by depriving the second end of heat.

Disclosed are a Li.sup.+ doped metal halide scintillation crystal with a zero-dimensional perovskite structure, a preparation method and use thereof. The scintillation crystal has a chemical formula of Cs.sub.3-xCu.sub.2I.sub.5:xLi, where x is in a range of 0.003 to 0.3. The method for preparing the scintillation crystal comprises the steps of: weighting and fully mixing a CuI powder, a CsI powder and a LiI powder in a molar ratio of 2:(3-x):x in an inert atmosphere to obtain a mixed powder, and growing into the scintillation crystal from the mixed powder by Bridgman Stockbarger method. After excited, the scintillation crystal could emit a broadband blue light in a range of 350-550 nm, with an intensity much higher than that of the original pure component crystal. The existence of Li.sup.+ further expands the application of the scintillation crystals from X/γ-ray detection to neutron detection.

Disclosed are a Li.sup.+ doped metal halide scintillation crystal with a zero-dimensional perovskite structure, a preparation method and use thereof. The scintillation crystal has a chemical formula of Cs.sub.3-xCu.sub.2I.sub.5:xLi, where x is in a range of 0.003 to 0.3. The method for preparing the scintillation crystal comprises the steps of: weighting and fully mixing a CuI powder, a CsI powder and a LiI powder in a molar ratio of 2:(3-x):x in an inert atmosphere to obtain a mixed powder, and growing into the scintillation crystal from the mixed powder by Bridgman Stockbarger method. After excited, the scintillation crystal could emit a broadband blue light in a range of 350-550 nm, with an intensity much higher than that of the original pure component crystal. The existence of Li.sup.+ further expands the application of the scintillation crystals from X/γ-ray detection to neutron detection.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

A method for manufacturing a blade with a first portion and a second portion, the method includes forming the first portion that includes forming a model of the first portion from removable material, forming a first shell mould from the model of the first portion, and forming the single-crystal or columnar first portion m a first metal alloy in the first shell mould from a single-crystal seed, and forming the second portion in which the second portion is formed on the first portion, and in which the first portion and the second portion are made from different materials, the second portion being polycrystalline and formed from a second metal alloy. The blade includes a single-crystal or columnar first portion made from a first metal alloy and a polycrystalline second portion made from the second metal alloy different from the first metal alloy.

The present disclosure discloses, in one arrangement, a scintillator material made of a metal halide with one or more additional group-13 elements. An example of such a compound is Ce:LaBr.sub.3 with thallium (Tl) added, either as a codopant or in a stoichiometric admixture and/or solid solution between LaBr.sub.3 and TlBr. In another arrangement, the above single crystalline iodide scintillator material can be made by first synthesizing a compound of the above composition and then forming a single crystal from the synthesized compound by, for example, the Vertical Gradient Freeze method. Applications of the scintillator materials include radiation detectors and their use in medical and security imaging.