The present invention concerns a device and a method for sensing an over-temperature of a power semiconductor. The invention: provides a current pulse source through control electrodes of the power semiconductor, duplicates the current provided by the current pulse source and provides the duplicated current to an emulating device, compares the voltage across the control electrodes to the voltage across the emulating device, notifies the result of the comparison.

A method for estimating the temperature of a stator coil of a magnetic suspension bearing of a rotor that is connected by connection wires to circuits for servo-controlling the position of the rotor includes the following steps: measuring the electric voltage at the terminals of the connection wires of the stator coil; measuring the intensity of the current passing through the stator coil; estimating the electric resistance of the stator coil and of the connection wires on the basis of an adaptive filter, the measured electric voltage and the intensity of the measured current; and estimating the temperature of the coil on the basis of the value of the estimated resistance.

A magnet temperature estimating device for a motor including a rotor having magnets and configured to output a rotational motive force, and a stator having a plurality of coils opposing the rotor with a gap therebetween, is provided. The device includes a sensor configured to detect an induced voltage induced by rotation of the rotor, and a controller configured to control the motor by supplying power to the plurality of coils in response to an input of a detection signal from the sensor. Gaps adjacent to each magnet in a rotation direction of the rotor are formed in the rotor. The controller estimates a temperature of the magnet based on the induced voltage detected when the magnet opposes any one of the plurality of coils, according to the rotation of the rotor.

The present invention relates to a battery cell surface temperature estimation system and method capable of minimizing a temperature measurement delay through a software algorithm method that estimates the actual cell surface temperature by reflecting the gradient of the measured temperature change of the battery cell

The present invention relates to a method and device for measuring the temperature in power resistors based on the measurement of the high-frequency circuit parameters of said resistor. The present invention excludes the use of thermocouples, dedicated temperature sensors or thermo chambers.

A temperature estimation system includes an internal temperature data obtainer that obtains internal temperature data of a smartphone carried by a user; an operation data obtainer that obtains operation data on an operation state of the smartphone; and a temperature estimator that calculates an estimated value of an external temperature in a vicinity of the smartphone from the internal temperature data and the operation data of the smartphone, based on correlation among internal temperature data of a mobile terminal device for measurement, operation data on an operation state of the mobile terminal device for measurement, and actual temperature data that represents an actual environmental temperature in a vicinity of the mobile terminal device for measurement.

An electronic system can be used to monitor temperature. The electronic system can include a characterized dielectric located adjacent to a plurality of heat-producing electronic devices. The electronic system can also include a leakage measurement circuit that is electrically connected to the characterized dielectric. The leakage measurement circuit can be configured to measure current leakage through the characterized dielectric. The leakage measurement circuit can also be configured to convert a leakage current measurement into a corresponding output voltage. A response device, electrically connected to the leakage measurement circuit can be configured to, in response to the output voltage exceeding a voltage threshold corresponding to a known temperature, initiate a response action.

The invention relates to an inverter (110) comprising: a power module (116.sub.1-3) having at least one semiconductor switch (Q, Q′), and a control device (120) configured to control the power module (116.sub.1-3) and to estimate an internal temperature (T.sub.J) of the at least one semiconductor switch (Q, Q′) by means of a temperature model (122) being a polynomial of order three or more having, as arguments, operating parameters including: a switching frequency (F.sub.SW), a temperature (T.sub.S) of the power module (116.sub.1-3), an AC current (I) outputted by the power module (116.sub.1-3), and the DC voltage (Udc).

A temperature sensor integrated in a transistor array, e.g., metal-oxide-semiconductor field-effect transistor (MOSFET) array, is provided. The integrated temperature sensor may include a doped well region formed in a substrate (e.g., SiC substrate), a resistor gate formed over the doped well region, first and second sensor terminals conductively coupled to the doped well region on opposite sides of the resistor gate. The integrated temperature sensor includes a gate driver to apply a voltage to the resistor gate that affects a resistance of the doped well region below the resistor gate, and temperature analysis circuitry to determine a resistance of a conductive path passing through the doped well region, and determine a temperature associated with the transistor array.

According to one embodiment, an electronic circuit includes an oscillator and a measuring circuit. The oscillator generates a first signal with a frequency corresponding to a time. The measuring circuit measures a first voltage based on a resonance frequency in a terminal of a semiconductor device where the first signal is supplied.