A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.

A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.

A sheet of electronic components includes a plurality of electronic components. A plurality of connecting members mechanically connects the electronic components together. A first fiducial marker is located at a first predetermined location on the sheet and a second fiducial marker is located at a second predetermined location on the sheet.

A method includes coating at least one conductive element of an electronic device with an electrically non-conductive thixotropic liquid. An electronic device includes a first layer including an upper conductive element, a second layer including a lower conductive element, and a spacer positioned between the layers. The first layer, the second layer, and the spacer define a sensing chamber in which the upper and lower conductive elements move to vary the resistance of the electronic device. A non-conductive thixotropic liquid is present within the sensing chamber. Movement of the layers toward each other displaces the thixotropic liquid from an initial state coating at least one of the conductive elements to permit contact between the conductive elements, and movement of the first layer and the second layer away from each other returns the thixotropic liquid to the initial state.

A method includes coating at least one conductive element of an electronic device with an electrically non-conductive thixotropic liquid. An electronic device includes a first layer including an upper conductive element, a second layer including a lower conductive element, and a spacer positioned between the layers. The first layer, the second layer, and the spacer define a sensing chamber in which the upper and lower conductive elements move to vary the resistance of the electronic device. A non-conductive thixotropic liquid is present within the sensing chamber. Movement of the layers toward each other displaces the thixotropic liquid from an initial state coating at least one of the conductive elements to permit contact between the conductive elements, and movement of the first layer and the second layer away from each other returns the thixotropic liquid to the initial state.

Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ.Math.m.

Provided is a current detection resistor, such as a shunt resistor, wherein a. low specific resistance and a small thermal electromotive force with respect to copper are achieved, while maintaining a low TCR. A resistance alloy for use in a current detection shunt resistor includes 4.5 to 5.5 mass % of manganese, 0.05 to 0.30 mass % of silicon, 0.10 to 0.30 mass % of iron, and a balance being copper, and has a specific resistance of 15 to 25 μΩ.Math.m.

A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.

A current sense resistor and a method of manufacturing a current sensing resistor with temperature coefficient of resistance (TCR) compensation are disclosed. The resistor has a resistive strip disposed between two conductive strips. A pair of main terminals and a pair of voltage sense terminals are formed in the conductive strips. A pair of rough TCR calibration slots is located between the main terminals and the voltage sense terminals, each of the rough TCR calibration slots have a depth selected to obtain a negative starting TCR value observed at the voltage sense terminals. A fine TCR calibration slot is formed between the pair of voltage sense terminals.

A method includes coating at least one conductive element of an electronic device with an electrically non-conductive thixotropic liquid. An electronic device includes a first layer including an upper conductive element, a second layer including a lower conductive element, and a spacer positioned between the layers. The first layer, the second layer, and the spacer define a sensing chamber in which the upper and lower conductive elements move to vary the resistance of the electronic device. A non-conductive thixotropic liquid is present within the sensing chamber. Movement of the layers toward each other displaces the thixotropic liquid from an initial state coating at least one of the conductive elements to permit contact between the conductive elements, and movement of the first layer and the second layer away from each other returns the thixotropic liquid to the initial state.