A mass spectrometer ion reaction device, useful for performing ion-ion reactions (eg. ETD, PTR) is described. The device includes a plurality of non-linear rods, that form a pair of quadrupole rod sets. The device includes an axial passageway, that allows injections of ions of both polarities into the device, and a three dimensional trapping region. Anions and cations that are injected into the device are spatially separated into different trapping regions by a DC dipole electric field generated by a DC voltage source. The device also includes a plurality of lenses to confine, transmit or receive ions in/from the device.

A method for producing an atom trap (20) comprising the steps: (a) applying an electrically conductive starting layer (2) onto a substrate (1), (b) applying at least one electric conductor element (4) to the starting layer (2) by means of electro-chemical deposition and/or a lift-off method, (c) applying at least one contacting element (6) by means of electro-chemical deposition and/or a lift-off method, such that the at least one contacting element (6) is connected to the at least one electric conductor element (4) in an electrically conductive manner, (d) removing the starting layer (2) in regions in which no electric conductor element (4) has been applied, (e) applying an insulation layer (7) that at least partially covers the at least one electric conductor element (4) and the at least one contacting element (6), (f) planarizing the insulation layer (7) and exposing the at least one contacting element (6), and (g) applying at least one additional electric conductor (14) element by means of electro-chemical deposition and/or a lift-off method, such that the at least one additional electric conductor element (14) is connected to the at least one contacting element (6) in an electrically conductive manner.

A method for producing an atom trap (20) comprising the steps: (a) applying an electrically conductive starting layer (2) onto a substrate (1), (b) applying at least one electric conductor element (4) to the starting layer (2) by means of electro-chemical deposition and/or a lift-off method, (c) applying at least one contacting element (6) by means of electro-chemical deposition and/or a lift-off method, such that the at least one contacting element (6) is connected to the at least one electric conductor element (4) in an electrically conductive manner, (d) removing the starting layer (2) in regions in which no electric conductor element (4) has been applied, (e) applying an insulation layer (7) that at least partially covers the at least one electric conductor element (4) and the at least one contacting element (6), (f) planarizing the insulation layer (7) and exposing the at least one contacting element (6), and (g) applying at least one additional electric conductor (14) element by means of electro-chemical deposition and/or a lift-off method, such that the at least one additional electric conductor element (14) is connected to the at least one contacting element (6) in an electrically conductive manner.

An ion trap device is provided as well as a method of manufacturing the ion trap device including a substrate, central DC electrode, RF electrode, side electrode and an insulating layer. Disposed over the substrate, the central DC electrode includes DC connector pad and DC rail connected thereto. The RF electrode includes RF rail adjacent to the DC rail and RF pad connected to RF rail. The side electrode has RF electrode disposed between thereof and the central DC electrode. The insulating layer supports one of the central DC electrode, RF electrode and side electrode, on a top surface of the substrate. The insulating layer includes first insulating layer and second insulating layer disposed over the first insulating layer, and the second insulating layer includes an overhang protruding with respect to the first insulating layer in a width direction of the ion trap device.

Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

Methods, systems, and devices for wireless communication are described. A base station and user equipment (UE) may utilize different slot structures for communications depending on the type of data to be transmitted. A base station may configure the slot structures based on a capability of a UE or operation conditions. The base station may identify a slot structure for a first slot, which may be group-specific or UE-specific, and determine a slot structure for a subsequent slot, which may be UE-specific or based on the slot structure of the first slot. A set of slot structure combinations may be identified to be used by a UE for combining the first and subsequent slots, and one combination may be selected based on a capability of the UE, an operation to be performed by the UE, an operational condition associated with the UE, or a combination thereof.

A method for producing an atom trap (20) comprising the steps: (a) applying an electrically conductive starting layer (2) onto a substrate (1), (b) applying at least one electric conductor element (4) to the starting layer (2) by means of electro-chemical deposition and/or a lift-off method, (c) applying at least one contacting element (6) by means of electro-chemical deposition and/or a lift-off method, such that the at least one contacting element (6) is connected to the at least one electric conductor element (4) in an electrically conductive manner, (d) removing the starting layer (2) in regions in which no electric conductor element (4) has been applied, (e) applying an insulation layer (7) that at least partially covers the at least one electric conductor element (4) and the at least one contacting element (6), (f) planarizing the insulation layer (7) and exposing the at least one contacting element (6), and (g) applying at least one additional electric conductor (14) element by means of electro-chemical deposition and/or a lift-off method, such that the at least one additional electric conductor element (14) is connected to the at least one contacting element (6) in an electrically conductive manner.

An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.

An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.

Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.