A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Provided is a semiconductor light emitting device including a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, a side extension structure disposed adjacent to a sidewall of the semiconductor structure, a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending on an upper surface of the side extension structure in a horizontal direction, and a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending on the upper surface of the side extension structure in the horizontal direction.

A method of manufacturing a light emitting device includes: bonding a light emitting element and a light transmissive member by a surface activated bonding method, which includes: activating a first bonding surface of the light emitting element to which the light transmissive member is to be bonded, by irradiating at least the first bonding surface with an ion beam, activating a second bonding surface of the light transmissive member to which the light emitting element is to be bonded, by irradiating at least the second bonding surface with an ion beam, and joining the light emitting element and the light transmissive member by bringing the activated first bonding surface and the activated second bonding surface into contact.

A method of manufacturing a light emitting device includes: bonding a light emitting element and a light transmissive member by a surface activated bonding method, which includes: activating a first bonding surface of the light emitting element to which the light transmissive member is to be bonded, by irradiating at least the first bonding surface with an ion beam, activating a second bonding surface of the light transmissive member to which the light emitting element is to be bonded, by irradiating at least the second bonding surface with an ion beam, and joining the light emitting element and the light transmissive member by bringing the activated first bonding surface and the activated second bonding surface into contact.

A method for preparing a glass composite wavelength converter comprising the steps of providing at least one phosphor material, providing a powder of glass components, mixing the phosphor material and the powder of glass components, thereby preparing a first mixture, adding at least one oxidizing agent to the first mixture, mixing the oxidizing agent with the first mixture, thereby preparing a second mixture, applying pressure and current to the second mixture, thereby preparing a glass composite wavelength converter is described. Furthermore, a glass component wavelength converter and a light source are described.

A light emitting device includes: a light emitting element; and a light transmissive member bonded to an emission surface of the light emitting element; wherein the light emitting element and the light transmissive member are bonded via a bonding portion that comprises a portion of the light emitting element and a portion of the light transmissive member; wherein the bonding portion contains at least one rare gas element selected from the group consisting of He, Ne, Ar, and Kr; and wherein a peak of a rare gas element distribution is positioned away from the emission surface in at least one of the light emitting element and the light transmissive member.

A method for preparing a glass composite wavelength converter comprising the steps of providing at least one phosphor material, providing a powder of glass components, mixing the phosphor material and the powder of glass components, thereby preparing a first mixture, adding at least one oxidizing agent to the first mixture, mixing the oxidizing agent with the first mixture, thereby preparing a second mixture, applying pressure and current to the second mixture, thereby preparing a glass composite wavelength converter is described. Furthermore, a glass component wavelength converter and a light source are described.

An assembly includes a carrier including a glass material, including at least one recess, wherein at least one optoelectronic semiconductor component is arranged in the at least one recess of the carrier, and at least one surface of the semiconductor component connects to the carrier via a melted surface including glass.

A light emitting device includes: a light emitting element; and a light transmissive member bonded to an emission surface of the light emitting element; wherein the light emitting element and the light transmissive member are bonded via a bonding portion that comprises a portion of the light emitting element and a portion of the light transmissive member; wherein the bonding portion contains at least one rare gas element selected from the group consisting of He, Ne, Ar, and Kr; and wherein a peak of a rare gas element distribution is positioned away from the emission surface in at least one of the light emitting element and the light transmissive member.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In embodiments, the method includes A) providing an auxiliary carrier; B) applying a sacrificial layer on the auxiliary carrier; C) applying a converter layer on the sacrificial layer, which includes quantum dots embedded in a matrix material or a luminescent polymer; D) providing a semiconductor layer sequence; E) optionally applying an adhesive layer on the semiconductor layer sequence; F) optionally bonding the converter layer on the semiconductor layer sequence by means of an adhesive layer, wherein the semiconductor layer sequence is configured to emit radiation; and G) removing the auxiliary carrier by means of optical, mechanical and/or chemical treatment and at least partially destroying the sacrificial layer.