Patent classifications
H03K23/00
CHARGE DOMAIN MATHEMATICAL ENGINE AND METHOD
A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.
CHARGE DOMAIN MATHEMATICAL ENGINE AND METHOD
A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.
Direct bi-directional gray code counter
A bi-directional Gray code counter includes a first set of logic circuitry configured to receive an input having a first sequence of bits representing a first value. The first set of logic circuitry is further configured to convert the first sequence of bits to a second sequence of bits representing the first value. The bi-directional Gray code counter further includes a second set of logic circuitry and third second set of logic circuitry. The second set of logic circuitry is configured to compare the second sequence of bits to a bit index pattern. The third set of logic circuitry is configured to transition one bit in the first sequence of bits from a first state to a second state to form a third sequence of bits representing a second value. The one bit is transitioned in response to the second sequence of bits being compared to the bit index pattern.
CHIP, SELF-CALIBRATION CIRCUIT AND METHOD FOR CHIP PARAMETER OFFSET UPON POWER-UP
A chip, a self-calibration circuit and method for chip parameter offset upon power-up are disclosed. The circuit includes a counting circuit, a calibration data latch circuit, a calibration data selection circuit and a parameter calibration circuit. The counting circuit outputs a sequentially scanned counting signal when receiving a valid enabling signal. The calibration data latch circuit latches the counting signal when receiving a valid latch signal. The calibration data selection circuit selects the counting signal latched by the calibration data latch circuit as a calibration signal when receiving the valid latch signal, otherwise selects the counting signal currently outputted as the calibration signal. The parameter calibration circuit implements a parameter calibration based on the calibration signal in a calibration mode, while outputs the valid latch signal when the parameter calibration satisfies a preset requirement. Thus, a parameter calibration with a higher accuracy and flexibility is realized in a cheaper way.
CHIP, SELF-CALIBRATION CIRCUIT AND METHOD FOR CHIP PARAMETER OFFSET UPON POWER-UP
A chip, a self-calibration circuit and method for chip parameter offset upon power-up are disclosed. The circuit includes a counting circuit, a calibration data latch circuit, a calibration data selection circuit and a parameter calibration circuit. The counting circuit outputs a sequentially scanned counting signal when receiving a valid enabling signal. The calibration data latch circuit latches the counting signal when receiving a valid latch signal. The calibration data selection circuit selects the counting signal latched by the calibration data latch circuit as a calibration signal when receiving the valid latch signal, otherwise selects the counting signal currently outputted as the calibration signal. The parameter calibration circuit implements a parameter calibration based on the calibration signal in a calibration mode, while outputs the valid latch signal when the parameter calibration satisfies a preset requirement. Thus, a parameter calibration with a higher accuracy and flexibility is realized in a cheaper way.
PERFORMING READ OPERATIONS ON GROUPED MEMORY CELLS
A request to perform a read operation on a memory device is received. The memory device includes a first group of memory cells. The first group of memory cells represents a first sequence of bits based on a first sequence of charge levels formed by the first group of memory cells. The read operation is performed by obtaining a first read signal for a first memory cell and a second read signal for a second memory cell of the first group of memory cells. A first rule logic is applied to the first read signal to generate a first updated signal and a second rule logic is applied to the second read signal to generate a second updated signal. Logic functions are applied to the first and second updated signals to generate an output signal indicating the first sequence of bits stored by the first group of memory cells.
LOW POWER STATIC RANDOM-ACCESS MEMORY
A low power SRAM (static RAM) for an image sensor includes a voltage generation circuit for providing a positive supply voltage V.sub.P and a negative supply V.sub.N, wherein VDD>V.sub.p>V.sub.n>V.sub.gnd; a plurality of memory cells coupled to a respective plurality of column sense lines in a pixel array, the plurality of memory cells receiving differential inputs dp and dn; and a Gray counter coupled to switchably couple V.sub.P and V.sub.N to the differential inputs dp and dn of the plurality of memory cells. A method of operating an image sensor with a low power SRAM includes acquiring an image by the image sensor; generating V.sub.P and V.sub.N such that V.sub.DD>V.sub.P>V.sub.N>V.sub.gnd; receiving an output g of a column of pixels at a clock input of a memory cell; and switchably coupling V.sub.P and V.sub.N to the differential inputs dp and dn of a plurality of memory cells in the SRAM according to a codeword from a Gray counter.
Charge domain mathematical engine and method
A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.
Charge domain mathematical engine and method
A multiplier has a pair of charge reservoirs. The pair of charge reservoirs are connected in series. A first charge movement device induces charge movement to or from the pair of charge reservoirs at a same rate. A second charge movement device induces charge movement to or from one of the pair of reservoirs, the rate of charge movement programmed to one of add or remove charges at a rate proportional to the first charge movement device. The first charge movement device loads a first charge into a first of the pair of charge reservoirs during a first cycle. The first charge movement device and the second charge movement device remove charges at a proportional rate from the pair of charge reservoirs during a second cycle until the first of the pair of charge reservoirs is depleted of the first charge. The second charge reservoir thereafter holding the multiplied result.
Chip, self-calibration circuit and method for chip parameter offset upon power-up
A chip, a self-calibration circuit and method for chip parameter offset upon power-up are disclosed. The circuit includes a counting circuit, a calibration data latch circuit, a calibration data selection circuit and a parameter calibration circuit. The counting circuit outputs a sequentially scanned counting signal when receiving a valid enabling signal. The calibration data latch circuit latches the counting signal when receiving a valid latch signal. The calibration data selection circuit selects the counting signal latched by the calibration data latch circuit as a calibration signal when receiving the valid latch signal, otherwise selects the counting signal currently outputted as the calibration signal. The parameter calibration circuit implements a parameter calibration based on the calibration signal in a calibration mode, while outputs the valid latch signal when the parameter calibration satisfies a preset requirement. Thus, a parameter calibration with a higher accuracy and flexibility is realized in a cheaper way.