A packaging structure, a preparation method, and a camera module are provided. The packaging structure includes a substrate module, and a light emitting unit and a light receiving unit located on the substrate of the substrate module. The substrate module defines first channels and second channels. Two ends of each first channel extend to the substrate and the non-photosensitive area of the light receiving unit, respectively. A first conductive layer is formed on an inner wall of each first channel to form a first hollow conductive channel, which is electrically connected to the substrate and the non-photosensitive area. Two ends of each second channel extend to the substrate and the light emitting unit, respectively. A second conductive layer is formed on an inner wall of each second channel to form a second hollow conductive channel, which is electrically connected to the substrate and the light emitting unit.

A modular photovoltaic system adapted for collecting light rays from a solar light source to generate electrical current, the system having a light-tracking solar collector adapted to collect the light rays, an edge-lit photovoltaic array, and a transport conduit adapted to transport the light rays to the edge-lit photovoltaic array. The edge-lit photovoltaic array has a plurality of edge-lit photovoltaic panels, each having a transparent diffusing pane positioned between two backing panels with inwardly directed photovoltaic surfaces. Each edge-lit photovoltaic panel perpendicularly contacts a lateral light distributor attached to the transport conduit, causing the transparent diffusing pane to illuminate the photovoltaic surfaces to generate electrical current. The light-tracking solar collector is adapted to rotate to remain oriented toward the solar light source.

An imaging device includes a sensor array with a number of pixels. In an embodiment, the imaging device can be operated by capturing a first low-spatial resolution frame using a subset of pixels of the sensor array and then capturing a second low-spatial resolution frame using the same subset of pixels of the sensor array. A first depth map is generated using raw pixel values of the first low-spatial resolution frame and a second depth map is generated using raw pixel values of the second low-spatial resolution frame. The first depth map can be compared to the second depth map to determine whether an object has moved in a field of view of the imaging device.

A complementary metal-oxide-semiconductor depth sensor element comprises a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. The first and second floating doped regions have dopants of a first polarity and the semiconductor area has dopants of a second polarity opposite to the first polarity. Since the photogate and at least parts of the first and second transfer gates connect to the same semiconductor area and no other dopants of polarity opposite to the second polarity. Therefore, the majority carriers from the photogate excited by lights drift, but not diffuse, to transfer to the first and second transfer gates.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

A semiconductor device includes: a connection terminal; a semiconductor chip having an electrode pad on one surface; a wire that connects the connection terminal and the electrode pad of the semiconductor chip; and transparent resin that covers the one surface of the semiconductor chip, and that seals the connection terminal and the wire, wherein: the wire includes a first bonded portion that is joined to the electrode pad, a second bonded portion that is joined to the connection terminal, and a loop portion that is formed so as to be continuous with the first bonded portion and has a turned back portion on a side opposite to the second bonded portion; and predetermined clearances are provided between the loop portion and the first bonded portion, and between the loop portion and other portions of the wire.

A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

A method of fabricating a color tunable thin film photovoltaic device includes depositing a layer of a semiconducting compound configured to exhibit a photovoltaic effect, and depositing a buffer layer over the layer of the semiconducting compound. Depositing transparent conducting oxides (TCO) over the buffer layer is followed by selecting two or more layers of optically transparent materials such that constructive interference among wavelengths reflected by the buffer layer, the TCO, and the two or more layers results in a desired exhibited color and depositing the two or more layers of the optically transparent materials above the TCO.

An electronic device mounting substrate includes: a first wiring substrate shaped in a rectangular frame, an interior of the rectangular frame constituting a first through hole; a second wiring substrate shaped in a rectangular frame or plate, the second wiring substrate being disposed so as to overlie a lower surface of the first wiring substrate and be electrically connected to the first wiring substrate; a metallic plate disposed so as to overlie a lower surface of the second wiring substrate so that the second wiring substrate is sandwiched between the metallic plate and the first wiring substrate; and a lens holder secured to an outer periphery of the metallic plate. A frame interior of the first wiring substrate, or a frame interior of each of the first wiring substrate and the second wiring substrate, constitutes an electronic device mounting space.

A container for solar string transportation includes, on the inside of a solar-string storing section, a long-side side plate, and a short-side side plate, and has an upper opening of the solar-string storing section for loading and unloading, and a pair of solar-string lifting/lowering devices along the inner wall of the long-side side plate. The solar-string lifting/lowering device includes a driving gear section set on the bottom plate side, an endless chain member that revolves around a direction changing gear section set on the upper opening side, a plurality of solar-string placing devices fixed to the endless chain member and including, on the outer side thereof, a projecting section for placing the lower surface of an end edge of the solar string, and a shock absorbing member fixed to the back of the solar-string placing devices. The shock absorbing member holds the end edge upper surface of the solar string.