Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.

The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater.

D-A  (1)

An organic light emitting display device includes a plurality of pixels each having a pixel driving circuit. Each of the pixels includes an organic light emitting diode and a driving TFT that controls driving of the organic light emitting diode and includes an active layer of low temperature poly-silicon, a gate node, a source node, and a drain node. The pixels include first to fifth switching TFTs electrically connected to the driving TFT and each including an active layer of an oxide semiconductor, a gate node, a source node, and a drain node. Further, the pixels include a storage capacitor connected between the gate node of the driving TFT and the source node of the fifth switching TFT and a coupling capacitor electrically connected in series to the storage capacitor and configured to cause capacitive coupling to supply a bootstrapped voltage to the gate node of the driving TFT.

A display panel includes a first substrate, an upper capacitor electrode, a capacitor dielectric layer, a second substrate opposite to the first substrate, a conductive bump, an electroluminescent layer, and a counter electrode. The upper capacitor electrode is disposed on an inner surface of the second substrate. The upper capacitor electrode is disposed on an inner surface of the second substrate. The capacitor dielectric layer covers the upper capacitor electrode of the second substrate. The first substrate has at least one pixel electrode and a first capacitor electrode separated from the pixel electrode. The conductive bump is protrusively disposed on the first capacitor electrode of the first substrate. The electroluminescent layer is sandwiched between the pixel electrode and the counter electrode.

Provided are: an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode; and an electronic device comprising the organic electronic element, wherein the organic material layer comprises compounds represented by Formula 1 and Formula 1, respectively, and thus can lower the driving voltage of the organic electronic element and improve the luminosity and lifespan thereof.

The present invention provides an organic thin film that imparts an excellent electron injection property and an excellent electron transport property when it is used as an electron injection layer of an organic EL device, a coating composition suitable for producing the organic thin film, and an organic EL device material for the organic thin film and the coating composition. The present invention provides an organic thin film, which is a single film containing a first material which is a compound having a structure of the following formula (1) and a second material which transports electrons or a laminate film including a film containing the first material and a film containing the second material,

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wherein X.sup.1 and X.sup.2 are the same as or different from each other and are each a nitrogen atom optionally having a substituent group, an oxygen atom optionally having a substituent group, a sulfur atom optionally having a substituent group, or a divalent linking group optionally having a substituent group; L is a direct bond or a linking group having a valence of p; n is a number of 0 or 1; p is a number of 1 to 4; q is a number of 0 or 1, with q being 0 when p is 1; R.sup.1 to R.sup.3 are the same as or different from each other and are each a monovalent substituent; and m.sup.1 to m.sup.3 are the same as or different from each other and are each a number of 0 to 3.

A semiconductor device according to the present invention includes a substrate, a plurality of electrodes on the substrate, an insulator provided with one or a plurality of openings exposing at least one electrode among the plurality of electrodes on the substrate, the insulator covering at least a portion of the plurality of electrodes, and a semiconductor sheet on the insulator and one or a plurality of exposed portions exposed from the one or the plurality of openings on the substrate.

A complex nanostructure, which includes a first nanostructure component having at least one aperture in a side thereof; at least one second nanostructure component having a first end and a second end, wherein the first end of each of the at least one second nanostructure is inserted through a corresponding one of the at least one aperture in the first nanostructure, thereby forming at least one junction. Embodiments of the complex nanostructure include a bifurcated nanostructure transistor constructed of linear carbon nanotubes, a multiplexer constructed of a circular carbon nanotube and multiple linear carbon nanotubes, and an information unfolder constructed of linear or a combination of linear and circular carbon nanotubes. The nanotubes may optionally be decorated with genetic material such as single-strand or double-strand human DNA segments and/or may be modified by e-beam or ozone gas to add defects into the nanotubes to alter electrical/functional characteristics.

A capacitor includes a first metal layer disposed on a wafer or substrate, a first polarized dielectric layer above the first metal layer and comprising a plurality of electrets formed by aligning molecular dipoles throughout a three-dimensional surface area of a polarizable dielectric material during polarization by applying a momentary electric field of positive or negative polarity, a second metal layer disposed on the first polarized dielectric layer to electrically isolate the first polarized dielectric layer, and a second polarized dielectric layer above the second metal layer, the second polarized dielectric layer comprising a plurality of electrets formed by aligning molecular dipoles throughout a three-dimensional surface area of a polarizable dielectric material during polarization by applying a second momentary electric field of opposing polarity. A plurality of alternating polarized dielectric layers and metal layers may be arranged in series to form a stack, with an internal passivation layer disposed between each stack.

A fused polycyclic aromatic compound represented by formula (1) is provided. In formula (1), one of R.sub.1 and R.sub.2 is a substituent group represented by general formula (2). In formula (2), n is from 0 to 2, R.sub.3 and R.sub.4 each independently represent a divalent linking group obtained by removing two hydrogen atoms from an aromatic hydrocarbon compound or a divalent linking group obtained by removing two hydrogen atoms from a 6-membered or more heterocyclic compound containing a nitrogen atom, an oxygen atom or a sulfur atom, with a plurality of R.sub.4 groups able to be the same as or different from each other when n is 2, and R.sub.5 represents a residue obtained by removing one hydrogen atom from an aromatic hydrocarbon compound or a residue obtained by removing one hydrogen atom from a 6-membered or more heterocyclic compound containing a nitrogen atom, an oxygen atom or a sulfur atom.

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In various embodiments, there is provided a controlled organic semiconductor device comprising a crystalline first organic semiconductor layer on or over a substrate, the crystalline first organic semiconductor layer having a first conductivity type; and a crystalline second organic semiconductor layer on or over the first organic semiconductor layer, the crystalline second organic semiconductor layer having a second conductivity type, the first conductivity type being different from the second conductivity type.