An interconnect board includes a thermally enhanced cavity substrate, an electronic component, a crack-inhibiting dielectric layer and a circuitry layer. The cavity in the thermally enhanced cavity substrate is defined by a heat conduction surface of a first conductive island and inner surrounding sidewalls of a stress-relief resin layer. The thermally enhanced cavity substrate further includes electrically conductive posts as vertical electrical conduction channel. The electronic component in the cavity is attached onto the heat conduction surface and covered and laterally surrounded by the crack-inhibiting dielectric layer. The circuitry layer can provide electrical connections between the electronic component and the electrically conductive posts. For applications involving electrical components with high thermal demand (such as power chips), the first conductive island may further include a metallized segment in contact with the bottom surface of the electronic component to improve thermal management.

An electronic device includes a circuit structure, a first electronic unit and an encapsulation layer. The first electronic unit is disposed on the circuit structure. The encapsulation layer surrounds the first electronic unit. The circuit structure includes at least one first insulating layer and at least one second insulating layer. The at least one first insulating layer is disposed between the first electronic unit and the at least one second insulating layer. A stiffness of the at least one first insulating layer is less than a stiffness of the at least one second insulating layer.

A power device includes high electron mobility transistors formed on an active layer, each transistor comprising a source finger, a drain finger and a gate finger, a source contact common to the source fingers, a drain contact common to the drain fingers, and a gate contact common to the gate fingers. At least one gate finger is not connected to the gate contact and forms a Schottky contact with the active layer. This gate finger forms, with the neighbouring drain finger, a Schottky diode configured to measure an operating temperature within the power device.

A semiconductor package includes a package substrate, a semiconductor stack on the package substrate, a passive device on the package substrate and spaced apart from the semiconductor stack, and a stiffener on the package substrate and extending around an outer side of the semiconductor stack. The stiffener includes a first step surface extends over the passive device. A width of a bottom surface of the stiffener is smaller than a width of a top surface of the stiffener.

An electronic device and method of manufacturing the same are provided. The electronic device includes a temperature-sensitive structure, a first multilayer structure, and a second multilayer structure. The temperature-sensitive structure has a first surface and a second surface opposite to the first surface. The first multilayer structure is disposed under the first surface of the temperature-sensitive structure and configured to cause a first residual stress in response to a first temperature change. The second multilayer structure is disposed over the second surface and configured to cause a second residual stress in response to a second temperature change. The second residual stress substantially eliminates the first residual stress so that the temperature-sensitive structure, the first multilayer structure and the second multilayer structure constitute a less-temperature-sensitive structure.

Systems and methods are disclosed herein to enable top-side and/or bottom-side cooling for double-sided molded (DSM) packages, thereby providing an enhanced thermal pathway to the ambient environment for densely packed DSM packages.

A package device and a manufacturing method thereof are provided. The package device includes a package structure, a redistribution layer, an underfill layer, a plurality of conductive pillars, another redistribution layer, and an encapsulant. The underfill layer is disposed between the package structure and the redistribution layer, and the conductive pillars and the package structure are disposed side by side between the redistribution layers. The encapsulant is disposed between the redistribution layers and surrounds the package structure and the conductive pillars.

An encapsulated integrated circuit includes an integrated circuit (IC) die. An encapsulation material encapsulates the IC die. Within the encapsulation material, a phononic bandgap structure is configured to have a phononic bandgap with a frequency range approximately equal to a range of frequencies of thermal phonons produced by the IC die when the IC die is operating.

A semiconductor device includes a substrate including a conductive transceiver pattern proximate to the substrate top side. An antenna structure includes an antenna dielectric structure coupled to the substrate top side, an antenna conductive structure having an antenna element, and a cavity below the antenna element. The antenna element overlies the conductive transceiver pattern. The cavity includes a cavity ceiling, a cavity base, and a cavity sidewall. Either a bottom surface of the antenna element defines the cavity ceiling and a perimeter portion of the antenna element is fixed to the antenna dielectric structure, or the antenna dielectric structure includes a body portion having a bottom surface that defines the cavity ceiling and the antenna element is vertically spaced apart from the bottom surface of the body portion. A semiconductor component is coupled to the substrate bottom side and the transceiver pattern.

A stacked semiconductor device includes a base semiconductor die and a plurality of core semiconductor dies that are stacked in a vertical direction, a plurality of temperature sensing circuits included in the plurality of core semiconductor dies, respectively, a conversion circuit included in the base semiconductor die, and a plurality of vertical conductive paths electrically connecting the base semiconductor die and the plurality of core semiconductor dies, through silicon vias provided in the plurality of vertical conductive paths in the vertical direction. The plurality of temperature sensing circuits generate sensing voltages that vary according to operating temperatures, and transfer the sensing voltages to the conversion circuit through a first vertical conductive path among the plurality of vertical conductive paths. The conversion circuit converts the sensing voltages into a temperature code.