The sputtering target of the present disclosure includes: an aluminum matrix; and (1) a material or phase containing aluminum and further containing either a rare earth element or a titanium group element or both a rare earth element and a titanium group element or (2) a material or phase containing either a rare earth element or a titanium group element or both a rare earth element and a titanium group element, at a content of 10 to 70 mol % in the aluminum matrix.

Methods for large-scale additive manufacturing of high-strength boron nitride nanotubes (BNNT)/aluminum (Al) (e.g., reinforced Al alloy) metal matrix composites (MMCs) (BNNT/Al MMCs), as well as the BNNT/Al MMCs produced by the large-scale additive manufacturing methods, are provided. A combination of ultrasonication and spray drying techniques can produce good BNNT/Al alloy feedstock powders, which can be used in a cold spraying process.

Methods for large-scale additive manufacturing of high-strength boron nitride nanotubes (BNNT)/aluminum (Al) (e.g., reinforced Al alloy) metal matrix composites (MMCs) (BNNT/Al MMCs), as well as the BNNT/Al MMCs produced by the large-scale additive manufacturing methods, are provided. A combination of ultrasonication and spray drying techniques can produce good BNNT/Al alloy feedstock powders, which can be used in a cold spraying process.

A high-thermal conductivity composite material is AlN.sub.p/ZA27 composite material, including 2%, 4%, 6%, or 8% by volume of aluminum nitride (AlN) ceramic particles and zinc-aluminium-27 (ZA27) alloy. The ZA27 alloy includes 70.52-71.08% by weight of Zn, 25.58?27.65% by weight of Al, 1.27?3.45% by weight of Cu, and 0.50% or less by weight of Mg. In the preparation of the high-thermal conductivity composite material, an as-cast AlN.sub.p/ZA27 composite material is subjected to homogenizing annealing and reciprocating extrusion.

There is provided a composite of a metallic matrix and boron nitride nanotubes, the metallic matrix including aluminum or an aluminum alloy. Also, there is provided a method for manufacturing the composite. The method includes: a powder mixing step of mixing a powder of boron nitride nanotubes and a powder of an element soluble in a molten metal of the metallic matrix to prepare a powder mixture of boron nitride nanotubes and a metallic matrix-soluble element; an alloy melt mixing step of mixing the powder mixture and the molten metal of the metallic matrix to prepare a metallic matrix melt mixed with boron nitride nanotubes; and a casting step of solidifying the metallic matrix melt mixed with boron nitride nanotubes to obtain the composite.

A composite material having an alloy matrix including titanium, aluminum, niobium, manganese, boron, and carbon is disclosed. The composite material includes, by atomic percentage, 40.0% to 50.0% Al, 1.0% to 8.0% Nb, 0.5% to 2.0% Mn, 0.1% to 2.0% B, and 0.01% to 0.2% C. The composite material is doped with a solid lubricant such as MoS.sub.2, ZnO, CuO, hexagonal boron nitride (hBN), WS.sub.2, AgTaO.sub.3, CuTaO.sub.3, CuTa.sub.2O.sub.6, or combinations thereof. Components composed of the composite material exhibit increased ductility at room temperature and reduced fracture tendency, resulting in improved durability.

Methods for large-scale additive manufacturing of high-strength boron nitride nanotubes (BNNT)/aluminum (Al) (e.g., reinforced Al alloy) metal matrix composites (MMCs) (BNNT/Al MMCs), as well as the BNNT/Al MMCs produced by the large-scale additive manufacturing methods, are provided. A combination of ultrasonication and spray drying techniques can produce good BNNT/Al alloy feedstock powders, which can be used in a cold spraying process.

There is provided a MgN-A based magnesium material (A is a metal or non-metal element configuring a nitride, N: nitrogen originating from the nitride). The magnesium material includes a spherical MgN-A eutectic phase and nitrogen atoms are dispersed in a magnesium matrix, whereby mechanical and ignition properties of the magnesium material are improved, as compared to a magnesium material or pure magnesium material in which the nitrogen atoms are not included and only the metal or non-metal element is included.

A semiconductor device includes a substrate and a gate structure on the substrate, in which the gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, the middle portion being a nitrogen rich portion, the top portion and the bottom portion being titanium rich portions, and the top portion, the middle portion, and the bottom portion are of same material composition.

A method for making alloy matrix composite, comprising: providing a metal matrix composite, the metal matrix composite includes a metal body and a reinforcement body; placing an alloying element layer on a surface of the metal matrix composite to obtain a first composite structure; rolling the first composite structure to obtain a middle composite structure; repeatedly folding and rolling the middle composite structure to obtain a second composite structure; annealing the second composite structure to obtain the alloy matrix composite.