Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.

The ethylene sensor is formed from a substrate with a gold thin film layer formed thereon. The substrate may be formed from soda-lime glass with a thickness of approximately 1.0 mm. Correspondingly, the gold layer may have a thickness of approximately 200 nm. The gold layer is divided into first and second regions or electrodes by a variable impedance channel containing K.sub.0.003Au.sub.0.008Mg.sub.0.009Ca.sub.0.015Si.sub.0.11Na.sub.0.175O.sub.0.68 as an ethylene selective material. The channel may be configured such that first and second sets of interdigitated gold fingers are defined in the first and second regions or electrodes, respectively. An ohmmeter is connected to the first and second regions to measure a resistance therebetween. A reference resistance is initially measured that is indicative of an absence of ethylene. Subsequent measurements of the resistance are compared against this reference resistance, with variations in the measured resistance indicating the presence of ethylene.

Disclosed in the present invention is vacuum coating apparatus for uniformly distributing metal steam using a uniform mixing buffer structure, comprising a crucible, wherein an induction heater for heating molten metal in the crucible to form metal steam is arranged outside of the crucible. A top of the crucible is connected to a flow distribution tank body by means of a metal steam pipeline. A horizontal core rod and a pressure stabilizing plate are arranged inside the flow distribution tank body. The core rod is located below the pressure stabilizing plate. A coating nozzle is arranged at the top of the flow distribution tank body. An induction coil is arranged on the outer side of the flow distribution tank body. A pressure regulating valve is arranged on the metal steam pipeline. A plurality of axial heating holes are provided inside the core rod, resistance wires are arranged inside the heating holes, and a primary guide plate, a secondary guide plate and a tertiary guide plate are arranged on the surface of the core rod; and a buffer groove is provided on the inner wall of the flow distribution tank body, and the buffer groove corresponds to the core rod in position. According to the present invention, when high-temperature steam makes contact with a low-temperature steel plate, a uniform coating is formed on the surface of the steel plate.

Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

Embodiments of the disclosed subject matter provide a micronozzle array including a linear array having a plurality of depositors connected in series, where a first depositor of the plurality of depositors may border a second depositor on a least one side boundary. The micronozzle array may include plurality of orifice arrays, where a width of each orifice in the plurality of orifice arrays is 20 μm or less in a minor axis of its cross section to flow, to regulate flow through a delivery gas distribution channel. The micronozzle array may include a plurality of exhaust distribution channels, where the delivery gas distribution channel and at least one of the plurality of exhaust distribution channels have separate fluid communication with each of the plurality of depositors.

Devices, systems, and techniques are provided for improved OVJP deposition using a shutter disposed within the OVJP print head, between the print head inlet and the nozzle outlets. An OVJP print head as disclosed includes an inlet for organic material entrained in a carrier gas, a micronozzle array outlet, and a shutter disposed in the gas flow path between the inlet and the micronozzle array outlet. The shutter allows for rapid cutoff of carrier gas flow through the print head with extremely low latency.

Embodiments of the present disclosure generally relate to optical devices having barrier layers for reduced hardmask diffusion and/or hardmask residue, and related methods of forming the optical devices. In one or more embodiments, a plurality of optical device structures each include a barrier layer disposed between a device function layer and a hardmask layer prior to removal of the hardmask layer.

Embodiments of the disclosed subject matter provide a vapor distribution manifold that ejects organic vapor laden gas into a chamber and withdraws chamber gas, where vapor ejected from the manifold is incident on, and condenses onto, a deposition surface within the chamber that moves relative to one or more print heads in a direction orthogonal to a platen normal and a linear extent of the manifold. The volumetric flow of gas withdrawn by the manifold from the chamber may be greater than the volumetric flow of gas injected into the chamber by the manifold. The net outflow of gas from the chamber through the manifold may prevent organic vapor from diffusing beyond the extent of the gap between the manifold and deposition surface. The manifold may be configured so that long axes of delivery and exhaust apertures are perpendicular to a print direction.

Disclosed are vapor transport deposition systems and methods for alternating sequential vapor transport deposition of multi-component perovskite thin-films. The systems include multiple vaporizing sources that are mechanically or digitally controlled for high throughput deposition. Alternating sequential deposition provides faster sequential deposition, and allows for reduced material degradation due to different vapor temperatures.