A mask assembly includes: a mask frame; a mask supported by the mask frame, the mask including a plurality of pattern holes; and a magnetic part disposed on one surface of the mask. The magnetic part provides a magnetic force between the mask and a target substrate and improves an adhesion between the mask and the target substrate to prevent deposition defects.

A vaporizer includes an outer tube configured to receive a flow of heated gas and an inner tube disposed at least partially within the outer tube. The inner tube is spaced apart from the outer tube such that the flow of heated gas is channeled through an annular space therebetween. The vaporizer also includes a crucible disposed at least partially within the inner tube. The crucible is extendable and retractable relative to the inner tube and within the outer tube. The crucible is configured to hold a molten metal such that a surface area of the molten metal exposed to the flow of heated gas is adjustable based on the position of the crucible relative to the inner tube. A heater is configured to vaporize the molten material and the vapor mixes with the flow of heated gas.

To provide a fluorinated ether composition for vapor deposition which can be used to form a vapor-deposited film excellent in frictional durability, and an article with a vapor-deposited film and a method for its production. This fluorinated ether composition for vapor deposition comprises a compound (A) having a poly(oxyperfluoroalkylene) chain and a hydrolyzable silyl group, and a partial condensate (B) of the compound (A), wherein the proportion of the partial condensate (B) to the total amount of the compound (A) and the partial condensate (B) is from 4 to 40 mass %.

A mixture contains a first compound represented by a formula (10) and a second compound represented by a formula (20), and the first compound and the second compound have structures different from each other. In the formula (10) and the formula (20), L.sub.12 is a substituted or unsubstituted arylene group having 6 to 50 ring carbon atoms or the like; Ar.sub.12 is a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms; L.sub.11, L.sub.21, and L.sub.22 are each independently a single bond, a substituted or unsubstituted arylene group having 6 to 50 ring carbon atoms, or the like; Ar.sub.11, Ar.sub.21, and Ar.sub.22 are each independently a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms; and R.sub.11 to R.sub.18 and R.sub.21 to R.sub.28 are each independently a hydrogen atom or a substituent.

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Embodiments of the disclosed subject matter provide a system having at least one carrier gas source, at least one heated container that includes organic material, and a jet array print head that includes a plurality of apertures to print lines on a substrate, and that is connected to a vacuum source. The system includes a pair of gas bearing plates, with a top gas bearing plate and a bottom gas bearing plate, each having a plurality of pressure apertures and vacuum apertures. The top gas bearing plate applies a uniform force to a top surface of the substrate, and the bottom gas bearing plate applies a uniform force to a bottom surface of the substrate. The top gas bearing plate includes a slot configured for the print head to fit within. The vacuum apertures are arranged perpendicular to a direction of travel of the substrate.

Embodiments of the disclosed subject matter provide a system having at least one carrier gas source, at least one heated container that includes organic material, and a jet array print head that includes a plurality of apertures to print lines on a substrate, and that is connected to a vacuum source. The system includes a pair of gas bearing plates, with a top gas bearing plate and a bottom gas bearing plate, each having a plurality of pressure apertures and vacuum apertures. The top gas bearing plate applies a uniform force to a top surface of the substrate, and the bottom gas bearing plate applies a uniform force to a bottom surface of the substrate. The top gas bearing plate includes a slot configured for the print head to fit within. The vacuum apertures are arranged perpendicular to a direction of travel of the substrate.

The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.

The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.

The process comprises treating 90-190 g titanium (IV) chloride in 10-100 ml de-ionized water for preparing Titanium cation (Ti.sup.4+); treating 130-275 ml potassium persulfate in 10-100 ml double-distilled water and keeping at constant temperature to obtain sulphate/oxide; dipping substrates into titanium (IV) chloride solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any; dipping substrates into potassium persulfate solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any, and keeping at 50-90° C. for complete one cycle; treating obtained Titanium cation (Ti.sup.4+) with sulphate/oxide and obtaining whitish layer on the substrate surface by necked eyes after about 10-15 cycles, suggesting initiation of film formation, wherein the deposition thickness of TiO.sub.2 layer is increased from 0.3-2.0-micron on determined 5-50 deposition cycles; and rinsing deposited films with de-ionized water and air annealed at 400-600° C. temperature to obtain anatase TiO.sub.2.

The process comprises treating 90-190 g titanium (IV) chloride in 10-100 ml de-ionized water for preparing Titanium cation (Ti.sup.4+); treating 130-275 ml potassium persulfate in 10-100 ml double-distilled water and keeping at constant temperature to obtain sulphate/oxide; dipping substrates into titanium (IV) chloride solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any; dipping substrates into potassium persulfate solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any, and keeping at 50-90° C. for complete one cycle; treating obtained Titanium cation (Ti.sup.4+) with sulphate/oxide and obtaining whitish layer on the substrate surface by necked eyes after about 10-15 cycles, suggesting initiation of film formation, wherein the deposition thickness of TiO.sub.2 layer is increased from 0.3-2.0-micron on determined 5-50 deposition cycles; and rinsing deposited films with de-ionized water and air annealed at 400-600° C. temperature to obtain anatase TiO.sub.2.