The present disclosure provides a wafer-holding device, which mainly includes a wafer carrier, a first lid ring and a second lid ring, wherein the wafer carrier includes a carrying surface for carrying a wafer. The second lid ring is connected to the first-lid ring and placed on a radial-inner side of the first lid ring, wherein the first lid ring has a circumference larger than that of the second lid ring, for carrying the second lid ring. When the wafer carrier moves toward the first lid ring and the second lid ring, the second lid ring contacts the wafer on the wafer carrier, to fasten the wafer on the carrying surface of the wafer carrier, for performing a thin-film deposition to the wafer.

The present disclosure provides a wafer-holding device, which mainly includes a wafer carrier, a first lid ring and a second lid ring, wherein the wafer carrier includes a carrying surface for carrying a wafer. The second lid ring is connected to the first-lid ring and placed on a radial-inner side of the first lid ring, wherein the first lid ring has a circumference larger than that of the second lid ring, for carrying the second lid ring. When the wafer carrier moves toward the first lid ring and the second lid ring, the second lid ring contacts the wafer on the wafer carrier, to fasten the wafer on the carrying surface of the wafer carrier, for performing a thin-film deposition to the wafer.

A system and a method for fabricating crystals, the method comprising heating an irradiation target to a temperature comprised in a range between a boiling point temperature of a material of the irradiation target and a critical point temperature of the material of the irradiation target, thereby generating a plasma plume of particles ablated from a surface of the irradiation target.

This disclosure provides systems, methods, and apparatus for tempering or chemically strengthening glass substrates having electrochromic devices fabricated thereon. In one aspect, an electrochromic device is fabricated on a glass substrate. The glass substrate is then tempered or chemically strengthened. The disclosed methods may reduce or prevent potential issues that the electrochromic device may experience during the tempering or the chemical strengthening processes, including the loss of charge carrying ions from the device, redistribution of charge carrying ions in the device, modification of the morphology of materials included in the device, modification of the oxidation state of materials included in the device, and the formation of an interfacial region between the electrochromic layer and the counter electrode layer of the device that impacts the performance of the device.

An amount of nitrogen in a compound film is controlled. A method of manufacturing compound film comprising forming films laminated on a substrate placed at a film forming chamber is provided. According to the method of manufacturing compound film, a first compound layer including one or more elements selected from metal elements and semimetal elements and oxygen element and a second compound layer including one or more elements and nitrogen element are laminated alternately. The first compound layer is formed by a Filtered Arc Ion Plating method and the second compound layer is formed by a sputtering method.

An amount of nitrogen in a compound film is controlled. A method of manufacturing compound film comprising forming films laminated on a substrate placed at a film forming chamber is provided. According to the method of manufacturing compound film, a first compound layer including one or more elements selected from metal elements and semimetal elements and oxygen element and a second compound layer including one or more elements and nitrogen element are laminated alternately. The first compound layer is formed by a Filtered Arc Ion Plating method and the second compound layer is formed by a sputtering method.

According to an embodiment, a radiation detector comprises a photoelectric conversion substrate and a scintillator layer. The photoelectric conversion substrate converts light into an electrical signal. The scintillator layer contacts the photoelectric conversion substrate and converts radiation incident from the outside into light. The scintillator layer is a fluorescer of CsI containing Tl as an activator. The CsI is a halide. The concentration of the activator inside the fluorescer is 1.6 mass %±0.4 mass %. The concentration of the activator inside the fluorescer in an in-plane direction of the scintillator layer has the relationship of central portion>peripheral portion. The central portion is a central region of a formation region of the scintillator layer. The peripheral portion is an outer circumferential region of the formation region of the scintillator layer.

A pressure sensor includes a flexible diaphragm which is flexed by pressure changes and a coating layer on one surface of the diaphragm. The diaphragm is a single layer containing silicon, nitrogen, and oxygen. Further, the coating layer contains silicon oxynitride. Also, the coating layer has a nitrogen concentration distribution that varies across the thickness of the coating layer.

A pressure sensor includes a flexible diaphragm which is flexed by pressure changes and a coating layer on one surface of the diaphragm. The diaphragm is a single layer containing silicon, nitrogen, and oxygen. Further, the coating layer contains silicon oxynitride. Also, the coating layer has a nitrogen concentration distribution that varies across the thickness of the coating layer.

Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.