C23C14/52

MASK ASSEMBLY FOR TESTING A DEPOSITION PROCESS, DEPOSITION APPARATUS INCLUDING THE MASK ASSEMBLY, AND TESTING METHOD FOR A DEPOSITION PROCESS USING THE MASK ASSEMBLY
20180021802 · 2018-01-25 ·

A deposition apparatus includes deposition sources, a deposition chamber, a mask assembly, and a transfer unit. The mask assembly includes a support member, a shutter member, and a drive member. The support member has a first opening configured to allow the deposition materials to pass through while supporting the base substrate on which the passed-through deposition materials are deposited. The shutter member is accommodated in the support member and has a second opening smaller than the first opening. The drive member is configured to change a position of the second opening with respect to the base substrate in accordance with the movement of the mask assembly.

MASK ASSEMBLY FOR TESTING A DEPOSITION PROCESS, DEPOSITION APPARATUS INCLUDING THE MASK ASSEMBLY, AND TESTING METHOD FOR A DEPOSITION PROCESS USING THE MASK ASSEMBLY
20180021802 · 2018-01-25 ·

A deposition apparatus includes deposition sources, a deposition chamber, a mask assembly, and a transfer unit. The mask assembly includes a support member, a shutter member, and a drive member. The support member has a first opening configured to allow the deposition materials to pass through while supporting the base substrate on which the passed-through deposition materials are deposited. The shutter member is accommodated in the support member and has a second opening smaller than the first opening. The drive member is configured to change a position of the second opening with respect to the base substrate in accordance with the movement of the mask assembly.

DEPOSITION APPARATUS
20180019395 · 2018-01-18 ·

A deposition apparatus includes a chamber, a first stage and a second stage for supporting substrates within the chamber, an evaporating source assembly moving a first stage area corresponding to the first stage and a second stage area corresponding to the second stage, and including a plurality of nozzles through which a source material is spurted, and a photographing assembly which is disposed between the first stage and the second stage and photographs the plurality of nozzles.

CONTROLLED DEPOSITION OF METAL AND METAL CLUSTER IONS BY SURFACE FIELD PATTERNING IN SOFT-LANDING DEVICES
20180002806 · 2018-01-04 ·

A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions and is capable of operating at atmospheric pressure. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components.

Method for monitoring process conditions of, and method for controlling, a plasma PVD process
12180579 · 2024-12-31 · ·

A method (200) for monitoring process conditions in a plasma PVD process as well as a method (300) for controlling a plasma PVD process are disclosed. The methods are performed in an apparatus (1) configured therefore. In accordance with the methods, an oscillating voltage signal is applied to a target (3), arranged in the apparatus (1), by means of a radio frequency generator 15). The response from the applied oscillating voltage signal is recorded by means of a radio frequency sensor (16). Based on the recorded response, information regarding at least one plasma process condition is derived. A computer program and a computer-readable medium are also disclosed.

Method for monitoring process conditions of, and method for controlling, a plasma PVD process
12180579 · 2024-12-31 · ·

A method (200) for monitoring process conditions in a plasma PVD process as well as a method (300) for controlling a plasma PVD process are disclosed. The methods are performed in an apparatus (1) configured therefore. In accordance with the methods, an oscillating voltage signal is applied to a target (3), arranged in the apparatus (1), by means of a radio frequency generator 15). The response from the applied oscillating voltage signal is recorded by means of a radio frequency sensor (16). Based on the recorded response, information regarding at least one plasma process condition is derived. A computer program and a computer-readable medium are also disclosed.

SYSTEMS AND METHODS FOR IN-SITU MEASUREMENT OF SHEET RESISTANCE ON SUBSTRATES

In some examples, a Vacuum Pre-treatment Module (VPM) metrology system is provided for measuring a sheet resistance of a layer on a substrate. The system may comprise an eddy sensor including a sender sensor and a receiver sensor defining a gap between them for accepting an edge of a substrate to be tested. A sensor controller receives measurement signals from the eddy sensor. A data processor processes the measurement signals and generates sheet resistance values for the layer on the substrate.

SYSTEMS AND METHODS FOR IN-SITU MEASUREMENT OF SHEET RESISTANCE ON SUBSTRATES

In some examples, a Vacuum Pre-treatment Module (VPM) metrology system is provided for measuring a sheet resistance of a layer on a substrate. The system may comprise an eddy sensor including a sender sensor and a receiver sensor defining a gap between them for accepting an edge of a substrate to be tested. A sensor controller receives measurement signals from the eddy sensor. A data processor processes the measurement signals and generates sheet resistance values for the layer on the substrate.

Film forming apparatus and film forming method

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

Film forming apparatus and film forming method

A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.